INTEGRATED CIRCUITS DATA SHEET UAA2073AM Image rejecting front-end for GSM applications Product specification Supersedes data of 1996 Oct 23 File under Integrated Circuits, IC17 1997 Jan 27 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135° respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. FEATURES • Low-noise, wide dynamic range amplifier • Very low noise figure • Dual balanced mixer for at least 30 dB on-chip image rejection This means that signals presented at the RF input at LO − IF frequency are rejected through this signal processing while signals at LO + IF frequency can form the IF signal. • IF I/Q combination network for 175 MHz • Down-conversion mixer for closed-loop transmitters • Independent TX/RX fast on/off power-down modes The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45° and 135° phase shifting and a combining network for image rejection.The IF driver has differential open-collector type outputs. • Very small outline packaging • Very small application (no image filter). APPLICATIONS • 900 MHz front-end for GSM hand-portable equipment The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. • Compact digital mobile communication equipment • TDMA receivers. The transmit section consists of a down-conversion mixer and a transmit IF driver stage. In the transmit mode an internal LO buffer is used to drive the transmit IF down-conversion mixer. GENERAL DESCRIPTION UAA2073AM contains both a receiver front-end and a high frequency transmit mixer intended for GSM (Global System for Mobile communications) cellular telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. All RF and IF inputs or outputs are balanced to reduce EMC issues. Fast power-up switching is possible. A synthesizer-on (SX) mode enables LO buffers independent of the other circuits. When SXON pin is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of receive chain is powered-up. The main advantage of the UAA2073AM is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed and the duplexer design is eased, compared with a conventional front-end design. ORDERING INFORMATION TYPE NUMBER UAA2073AM 1997 Jan 27 PACKAGE NAME DESCRIPTION SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm 2 VERSION SOT266-1 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM QUICK REFERENCE DATA Note 1. SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC supply voltage 3.6 3.75 5.3 V ICC(RX) receive supply current 21 26 32 mA ICC(TX) transmit supply current 9 12 15 mA NFRX noise figure on demonstration board (including matching and PCB losses) − 3.6 4.7 dB GCPRX conversion power gain 19 22 25 dB IR image frequency rejection 30 45 − dB Tamb operating ambient temperature −30 +25 +75 °C Note 1. For conditions see Chapters “DC characteristics” and “AC characteristics”. BLOCK DIAGRAM handbook, full pagewidth VCC1 n.c. n.c. 2 3 SBS UAA2073AM 1 +45oC 4 20 RFINA RFINB GND1 5 6 +135oC LNA 19 7 IFA IF COMBINER IFB low-noise amplifier RECEIVE SECTION VCC2 RXON TXON SXON GND2 TRANSMIT SECTION 15 RX 11 12 10 CURRENT REGULATORS QUADRATURE PHASE SHIFTER TX IF MIXER LO 14 16 LOCAL OSCILLATOR SECTION 13 18 17 9 LOINA LOINB TXINB 8 MGD149 Fig.1 Block diagram. 1997 Jan 27 3 TXINA TXOIFA TXOIFB Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM PINNING SYMBOL PIN DESCRIPTION SBS 1 sideband selection (should be grounded for fLO < fRF) n.c. 2 not connected n.c. 3 not connected VCC1 4 supply voltage for receive and transmit sections RFINA 5 RF input A (balanced) RFINB 6 RF input B (balanced) GND1 7 ground 1 for receive and transmit sections RFINA 5 handbook, halfpage SBS 1 20 IFA n.c. 2 19 IFB n.c. 3 18 LOINA VCC1 4 17 LOINB 16 GND2 UAA2073AM TXINA 8 transmit mixer input A (balanced) RFINB 6 15 VCC2 TXINB 9 transmit mixer input B (balanced) GND1 7 14 TXOIFA SXON 10 hardware power-on of LO section (including buffers to RX and TX) TXINA 8 13 TXOIFB RXON 11 hardware power-on for receive section and LO buffers to RX TXINB 9 12 TXON SXON 10 11 RXON TXON 12 hardware power-on for transmit section and LO buffers to TX TXOIFB 13 transmit mixer IF output B (balanced) TXOIFA 14 transmit mixer IF output A (balanced) VCC2 15 supply voltage for LO section GND2 16 ground 2 for LO section LOINB 17 LO input B (balanced) LOINA 18 LO input A (balanced) IFB 19 IF output B (balanced) IFA 20 IF output A (balanced) 1997 Jan 27 MGD150 Fig.2 Pin configuration. 4 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. The RF differential input impedance is 150 Ω (parallel real part), chosen to minimize current consumption at best noise performance. FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type. The whole internal architecture is fully differential. The IF output is differential and of the open-collector type, tuned for 175 MHz. Typical application will load the output with a 680 Ω resistor load at each IF output, plus a 1 kΩ load consisting in the input impedance of the IF filter or in the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 1 kΩ load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. The local oscillator, shifted in phase to 45° and 135°, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45° and 135° respectively, amplified and recombined internally to realize the image rejection. Pin SBS allows sideband selection: Fast switching, on/off, of the receive section is controlled by the hardware input RXON. • fLO > fRF (SBS = 1) • fLO < fRF (SBS = 0). Where fRF is the frequency of the wanted signal. SBS handbook, full pagewidth MIXER VCC1 IF amplifier +45o IFA RFINA RFINB IF COMBINER MIXER IFB LNA GND1 IF amplifier +135o MBH188 RXON LOIN Fig.3 Block diagram, receive section. 1997 Jan 27 5 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM Local oscillator section Transmit mixer The Local Oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF and down-convert it to a modulated transmit IF frequency which is phase locked with the baseband modulation. The LO differential input impedance is 50 Ω (parallel real part). The transmit mixer provides a differential input at 200 Ω and a differential output driver buffer for a 1 kΩ load. The IF outputs are low impedance (emitter followers). A synthesizer-on (SX) mode is used to power-up the buffering on the LO inputs, minimizing the pulling effect on the external VCO when entering transmit or receive modes. Fast switching, on/off, of the transmit section is controlled by the hardware input TXON. This mode is active when the SXON input is HIGH. Table 1 shows status of circuit in accordance with TXON, RXON and SXON inputs. to RX handbook, halfpage handbook, halfpage VCC2 TX MIXER TXOIFA TXOIFB LOIN RXON TXON QUAD SXON MBH190 TXON to TX GND2 TXINB TXINA MBH189 LOINA LOINB Fig.4 Block diagram, LO section. 1997 Jan 27 Fig.5 Block diagram, transmit mixer. 6 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON RXON SXON LOW LOW LOW power-down mode LOW HIGH LOW RX mode: receive section and LO buffers to RX on HIGH LOW LOW TX mode: transmit section and LO buffers to TX on LOW LOW HIGH SX mode: complete LO section on LOW HIGH HIGH SRX mode: receive section on and SX mode active HIGH LOW HIGH STX mode: transmit section on and SX mode active HIGH HIGH LOW receive and transmit sections on; specification not guaranteed HIGH HIGH HIGH receive and transmit sections on; specification not guaranteed LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. − VCC supply voltage ∆GND difference in ground supply voltage applied between GND1 and GND2 − Pi(max) maximum power input MAX. UNIT 9 V 0.6 V − +20 dBm Tj(max) maximum operating junction temperature − +150 °C Pdis(max) maximum power dissipation in stagnant air − 250 mW Tstg IC storage temperature −65 +150 °C HANDLING Every pin withstands the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5). THERMAL CHARACTERISTICS SYMBOL Rth j-a 1997 Jan 27 PARAMETER thermal resistance from junction to ambient in free air 7 VALUE UNIT 120 K/W Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins: VCC1 and VCC2 VCC supply voltage ICC(RX) over full temperature range 3.6 3.75 5.3 V supply current in RX mode 21 26 32 mA ICC(TX) supply current in TX mode 9 12 15 mA ICC(SX) supply current in SX mode 4.5 5.8 7.0 mA ICC(SRX) supply current in SRX mode 23 28 34 mA ICC(STX) supply current in STX mode 12.5 15.0 19.5 mA ICC(PD) supply current in power-down mode − 0.01 50 µA − 1.25 − V Pins: SXON, RXON, TXON and SBS Vth CMOS threshold voltage note 1 VIH HIGH level input voltage 0.7VCC − VCC V VIL LOW level input voltage −0.3 − 0.8 V IIH HIGH level static input current pin at VCC − 0.4 V −1 − +1 µA IIL LOW level static input current pin at 0.4 V −1 − +1 µA receive section on 2.0 2.2 2.4 V receive section on 2.3 3.0 3.8 mA transmit section on 2.1 2.4 2.6 V transmit section on 1.8 1.9 2.1 V receive section on 2.3 2.5 2.8 V transmit section on 2.3 2.5 2.8 V Pins: RFINA and RFINB VI(RFIN) DC input voltage level Pins: IFA and IFB IO(IF) DC output current Pins: TXINA and TXINB VI(TXIN) DC input voltage level Pins: TXOIFA and TXOIFB VO(TXOIF) DC output voltage level Pins: LOINA and LOINB VI(LOIN) DC input voltage level Note 1. The referenced inputs should be connected to a valid CMOS input level. 1997 Jan 27 8 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM AC CHARACTERISTICS VCC = 3.75 V; Tamb = −30 to +75 °C; fIF = 175 MHz; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive section (receive section on) RiRX RF input resistance (real part of the parallel input impedance) balanced; at 942.5 MHz − 150 − Ω CiRX RF input capacitance (imaginary part of the parallel input impedance) balanced; at 942.5 MHz − 1 − pF fiRX RF input frequency 925 − 960 MHz RLiRX return loss on matched RF input note 1 15 20 − dB GCPRX conversion power gain differential RF input to differential IF output matched to 1 kΩ differential 19 22 25 dB Grip gain ripple as a function of RF frequency note 2 − 0.2 0.5 dB ∆G/T gain variation with temperature note 2 −20 −15 −10 mdB/K DES1 1 dB desensitization input power interferer frequency offset 3 MHz − −30 − dBm CP1RX 1 dB input compression point note 1 −25 −23.0 − dBm IP2DRX half IF spurious rejection (fRF = fLO + 0.5fIF) note 2 60 − − dB IP3RX 3rd order intercept point referenced to the RF input note 2 −21.5 −15 − dBm NFRX overall noise figure RF input to differential IF output; note 3 Tamb = +25°C − 3.6 4.0 dB over full temperature range − − 4.7 dB RLRX typical application IF output load impedance balanced − 1000 − Ω CLRX IF output load capacitance unbalanced − − 2 pF foRX IF frequency range − 175 − MHz IR image frequency rejection 30 45 − dB 1997 Jan 27 fLO < fRF 9 Philips Semiconductors Product specification Image rejecting front-end for GSM applications SYMBOL UAA2073AM PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Local oscillator section (RXON or TXON or SXON = 1) fiLO LO input frequency 750 − 785 MHz RiLO LO input resistance (real part of the parallel input impedance) balanced; at 767.5 MHz − 80 − Ω CiLO LO input capacitance (imaginary part of the parallel input impedance) balanced; at 767.5 MHz − 2 − pF RLiLO return loss on matched input (including power-down mode) note 2 10 15 − dB ∆RLiLO return loss variation between SX, linear S11 variation; note 1 SRX and STX modes − 20 − mU PiLO LO input power level −7 −4 0 dBm RILO reverse isolation 40 − − dB − 200 Ω LOIN to RFIN at LO frequency; note 2 Transmit section (transmit section on) ZoTX TX IF output impedance − ZLTX TX IF load impedance − 1 − kΩ CLTX TX IF load capacitance − − 2 pF RiTX TX RF input resistance (real part of the parallel input impedance) balanced; at 897.5 MHz − 200 − Ω CiTX TX RF input capacitance (imaginary part of the parallel input impedance) balanced; at 897.5 MHz − 1 − pF fiTX TX input frequency 880 − 915 MHz RLiTX return loss on matched TX input note 1 15 20 − dB GCPTX conversion power gain from 200 Ω to 1 kΩ output; note 2 5 7.4 10 dB foTX TX output frequency 40 − 200 MHz CP1TX 1 dB input compression point −22 −17.5 − dBm IP2TX 2nd order intercept point − +20 − dBm IP3TX 3rd order intercept point −12 −9 − dBm NFTX noise figure double sideband; notes 2 and 3 − 9.8 12 dB RITX reverse isolation TXIN to LOIN; note 2 40 − − dB ITX isolation LOIN to TXIN; note 2 40 − − dB 1 5 20 µs note 1 Timing tstart start-up time of each block Notes 1. Measured and guaranteed only on Philips UAA2073AM demonstration board at Tamb = 25 °C. 2. Measured and guaranteed only on Philips UAA2073AM demonstration board. 3. This value includes printed-circuit board and balun losses on Philips UAA2073AM demonstration board over full temperature range. 1997 Jan 27 10 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM INTERNAL PIN CONFIGURATION PIN SYMBOL 1 SBS 10 SXON DC VOLTAGE (V) EQUIVALENT CIRCUIT VCC 1 11 RXON 12 TXON GND MBH682 4 VCC1 +3.75 15 VCC2 +3.75 7 GND1 0 16 GND2 0 5 RFINA +2.2 6 RFINB +2.2 8 TXINA +2.4 9 TXINB +2.4 VCC 5, 8 6, 9 GND MBH683 13 TXOIFB +1.9 14 TXOIFA +1.9 VCC 13, 14 GND 1997 Jan 27 11 MBH684 Philips Semiconductors Product specification Image rejecting front-end for GSM applications PIN SYMBOL DC VOLTAGE (V) 17 LOINB +2.5 18 LOINA +2.5 UAA2073AM EQUIVALENT CIRCUIT VCC 17 18 GND MBH685 19 IFB +3.0 VCC 19 20 IFA 20 +3.0 GND GND MBH686 1997 Jan 27 12 1997 Jan 27 13 TXIN 880 to 915 MHz RFIN 925 to 960 MHz 15 nH 15 nH 15 nH C6 1.8 pF L4 C5 1.8 pF C1 1.5 pF L5 15 nH L3 C3 1.5 pF L2 1 1 2 UAA2073AM C25 27 pF 10 9 8 7 R8 680 kΩ RXON 1 2 C10 3.3 pF R10 680 kΩ VCC 390 pF 11 C27 27 pF L13 180 nH R2 180 Ω MGD151 C32 6.8 pF C31 6.8 pF C14 L14 180 nH 390 pF C13 27 pF L7 12 nH 180 Ω R1 C15 27 pF C9 3.3 pF L8 12 nH L15 100 nH C34 8.2 pF L16 100 nH C11 IFB IFA 27 pF C12 C18 3.9 pF 220 pF C19 3.9 pF 12 TXON VCC L9 22 nH L12 120 nH L11 120 nH 13 14 15 16 5 6 17 4 18 19 2 3 20 1 Fig.6 Philips demonstration board diagram. R9 680 kΩ SXON C23 27 pF R5 680 kΩ R4 680 Ω VCC R3 680 Ω C33 8.2 pF TXOIF 40 to 200 MHz LOIN 750 to 785 MHz IFO 175 MHz Image rejecting front-end for GSM applications 120 pF C28 C26 27 pF 2 27 pF C7 L6 27 nH L1 18 nH C24 1 nF 27 pF C8 27 pF 27 pF C4 C2 VCC C20 27 pF SBS handbook, full pagewidth C17 Philips Semiconductors Product specification UAA2073AM APPLICATION INFORMATION Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM Table 2 UAA2073AM demonstration board parts list PART VALUE SIZE LOCATION PART Resistors R1 VALUE SIZE LOCATION Inductors 180 Ω 0805 TXOIF L1 18 nH 0805 RFIN R2 180 Ω 0805 TXOIF L2 15 nH 0805 RFIN R3 680 Ω 0805 IFO L3 15 nH 0805 RFIN R4 680 Ω 0805 IFO L4 15 nH 0805 TXIN R5 680 kΩ 0805 SBS L5 15 nH 0805 TXIN R8 680 kΩ 0805 RXON L6 27 nH 0805 TXIN R9 680 kΩ 0805 SXON L7 12 nH 0805 LOIN R10 680 kΩ 0805 TXON L8 12 nH 0805 LOIN L9 22 nH 0805 LOIN 120 nH 1008 IFO Capacitors C1 1.5 pF 0805 RFIN L11 C2 27 pF 0805 RFIN L12 120 nH 1008 IFO C3 1.5 pF 0805 RFIN L13 180 nH 0805 TXOIF 180 nH 0805 TXOIF C4 27 pF 0805 RFIN L14 C5 1.8 pF 0805 TXIN L15 100 nH 1008 IFO C6 1.8 pF 0805 TXIN L16 100 nH 1008 IFO C7 27 pF 0805 TXIN C8 27 pF 0805 TXIN C9 3.3 pF 0805 LOIN C10 3.3 pF 0805 LOIN C11 27 pF 0805 LOIN C12 27 pF 0805 LOIN C13 390 pF 0805 TXOIF C14 390 pF 0805 TXOIF C15 27 pF 0805 VCCLO C17 3.9 pF 0805 IFO C18 3.9 pF 0805 IFO C19 220 pF 0805 IF/VCC C20 27 pF 0805 SBS C23 27 pF 0805 VCCLNA C24 1 nF 0805 VCCLNA C25 27 pF 0805 RXON C26 27 pF 0805 SXON C27 27 pF 0805 TXON C28 120 pF 0805 VCC C31 6.8 pF 0805 TXOIF C32 6.8 pF 0805 TXOIF C33 8.2 pF 0805 IFO C34 8.2 pF 0805 IFO 1997 Jan 27 Other components COMPONENT DESCRIPTIONS IC1 UAA2073AM SMA/RIM sockets for RF and IF inputs/outputs SMB VCC socket Component manufacturers All surface mounted resistors and capacitors are from Philips Components. The small value capacitors are multilayer ceramic with NPO dielectric. The inductors are from Coilcraft UK. 14 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1997 Jan 27 EUROPEAN PROJECTION 15 o Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1997 Jan 27 16 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jan 27 17 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM NOTES 1997 Jan 27 18 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073AM NOTES 1997 Jan 27 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 437027/1200/02/pp20 Date of release: 1997 Jan 27 Document order number: 9397 750 01642