PHILIPS BAV70T_04

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAV70T
High-speed double diode
Product specification
Supersedes data of 1997 Dec 19
2004 Feb 04
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
FEATURES
PINNING
• Very small plastic SMD package
PIN
• High switching speed: max. 4 ns
1
anode 1
• Continuous reverse voltage: max. 100V
2
anode 2
• Repetitive peak reverse voltage: max. 100 V
3
common cathode
DESCRIPTION
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
handbook, halfpage
3
3
• High-speed switching in e.g. surface mounted circuits.
1
DESCRIPTION
1
Two high-speed switching diodes in a common cathode
configuration, fabricated in planar technology, in a very
small rectangular SMD SOT416 (SC-75) package.
2
2
MAM368
Marking code: A4.
Fig.1
Simplified outline (SOT416; SC-75) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BAV70T
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (unless otherwise specified)
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
single diode loaded
−
150
mA
both diodes loaded
−
75
mA
−
500
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
170
mW
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
Ts = 90 °C; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ts = 90 °C; one diode loaded
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
+150
°C
2004 Feb 04
2
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
0.715
V
IF = 10 mA
0.855
V
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 75 V
2
µA
VR = 25 V; Tj = 150 °C
60
µA
VR = 75 V; Tj = 150 °C
100
µA
1.5
pF
see Fig.5
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
trr
reverse recovery time
switching from IF = 10 mA to IR = 10 mA;
4
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
ns
Vfr
forward recovery voltage
switched to IF = 10 mA; tr = 20 ns; see Fig.8
V
1.75
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-s)
2004 Feb 04
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
3
one diode loaded
VALUE
UNIT
350
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
GRAPHICAL DATA
MBK249
300
IF
(mA)
MBG382
300
handbook, halfpage
handbook, halfpage
(1)
IF
(mA)
(1)
200
(2)
(3)
200
(2)
100
100
0
0
100
Ts (°C)
0
200
(1) One diode loaded.
(2) Both diodes loaded.
Fig.2
0
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current per diode as a function of soldering
point temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Feb 04
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
MGA885
102
MBG446
0.8
handbook, halfpage
Cd
(pF)
IR
(µA)
VR = 75 V
10
0.6
max
75 V
1
10
0.4
25 V
1
0.2
typ
typ
10 2
0
100
0
T j ( o C)
0
200
4
8
12
VR (V)
16
f = 1 MHz; Tj = 25 °C.
Fig.5
Reverse current as a function of junction
temperature.
2004 Feb 04
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
2004 Feb 04
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2004 Feb 04
REFERENCES
IEC
JEDEC
EIAJ
SC-75
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Feb 04
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
R76/03/pp9
Date of release: 2004
Feb 04
Document order number:
9397 750 12573