PHILIPS BGD814_01

DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D252
BGD814
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Sep 07
2001 Nov 01
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
FEATURES
BGD814
PINNING - SOT115J
• Excellent linearity
PIN
• Extremely low noise
DESCRIPTION
1
• Excellent return loss properties
input
2, 3
• Silicon nitride passivation
common
5
• Rugged construction
+VB
7, 8
• Gold metallization ensures excellent reliability.
common
9
output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
1
2
3
5
7
8
9
DESCRIPTION
Side view
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
CONDITIONS
power gain
total current consumption (DC)
MIN.
MAX.
UNIT
f = 45 MHz
19.7
20.3
dB
f = 870 MHz
20.5
21.5
dB
VB = 24 V
380
410
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
−
30
Vi
RF input voltage
−
70
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Nov 01
2
V
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 45 MHz
19.7
−
20.3
dB
f = 870 MHz
20.5
−
21.5
dB
dB
SL
slope straight line
f = 45 to 870 MHz; note 1
0.5
−
1.5
FL
flatness straight line
f = 45 to 100 MHz
−
−
±0.25
dB
f = 100 to 800 MHz
−
−
±0.5
dB
f = 800 to 870 MHz
−0.4
−
0.1
dB
s11
s22
input return losses
output return losses
f = 45 to 80 MHz
25
−
−
dB
f = 80 to 160 MHz
22
−
−
dB
f = 160 to 320 MHz
19
−
−
dB
f = 320 to 550 MHz
17
−
−
dB
f = 550 to 650 MHz
17
−
−
dB
f = 650 to 750 MHz
16
−
−
dB
f = 750 to 870 MHz
15
−
−
dB
f = 870 to 914 MHz
12
−
−
dB
f = 45 to 80 MHz
24
−
−
dB
f = 80 to 160 MHz
22
−
−
dB
f = 160 to 320 MHz
17
−
−
dB
f = 320 to 550 MHz
18
−
−
dB
f = 550 to 650 MHz
16
−
−
dB
f = 650 to 750 MHz
15
−
−
dB
f = 750 to 870 MHz
15
−
−
dB
f = 870 to 914 MHz
13
−
−
dB
s21
phase response
f = 50 MHz
−45
−
+45
deg
CTB
composite triple beat
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
−
−66
dB
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−
−60.5
dB
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
Xmod
cross modulation
−
−
−56
dB
112 chs; fm = 547.25 MHz; Vo = 50.2 dBmV at −
745 MHz; note 2
−
−55.5
dB
79 chs; fm = 331.25 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
−
−
−65
dB
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−66
dB
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−62.5
dB
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−61
dB
112 chs; fm = 745.25 MHz; Vo = 50.2 dBmV at −
745 MHz; note 2
−
−57
dB
−
−
−66
dB
79 chs; fm = 445.25 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
2001 Nov 01
3
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
SYMBOL
CSO
PARAMETER
composite second
order distortion
CONDITIONS
BGD814
MIN.
TYP.
MAX.
UNIT
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
−
−68
dB
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
−
−
−61
dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−
−57
dB
112 chs; fm = 210 MHz; Vo = 50.2 dBmV at
745 MHz; note 2
−
−
−56
dB
79 chs; fm = 210 MHz; Vo = 47.3 dBmV at
547 MHz; note 3
−
−
−64
dB
d2
second order distortion
note 4
−
−
−69
dB
Vo
output voltage
dim = −60 dB; note 5
64
−
−
dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
48
−
−
dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
50
−
−
dBmV
f = 50 MHz
−
−
5.5
dB
f = 550 MHz
−
−
5.5
dB
f = 750 MHz
−
−
6.5
dB
f = 870 MHz
−
−
7.5
dB
note 6
380
395
410
mA
NF
Itot
noise figure
total current
consumption (DC)
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo − 6 dB; fr = 860.25 MHz;
Vr = Vo − 6 dB; measured at fp + fq − fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01
4
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MLD345
−50
handbook, halfpage
(1)
CTB
(dB)
BGD814
MLD346
−40
52
handbook, halfpage
(1)
Xmod
Vo
(dBmV)
52
Vo
(dBmV)
(dB)
−60
48
−50
48
−70
44
−60
44
(2)
(3)
(4)
(2)
−80
−90
40
−70
36
1000
800
f (MHz)
−80
(3)
(4)
200
0
400
600
200
0
400
600
40
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.2
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
MLD347
−60
handbook, halfpage
(1)
CSO
(dB)
(2)
−70
Fig.3
52
Vo
(dBmV)
48
(3)
−80
−90
44
40
(4)
−100
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.4
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
5
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
MLD348
−40
handbook, halfpage
(1)
CTB
(dB)
MLD349
−40
52
handbook, halfpage
Vo
(dBmV)
(dB)
−50
48
52
(1)
Xmod
Vo
(dBmV)
−50
BGD814
48
(2)
−60
(2)
(3)
(4)
−80
200
0
400
600
44
(4)
40
−70
36
1000
800
f (MHz)
−80
−70
(3)
−60
44
40
200
0
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.5
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
MLD350
−50
handbook, halfpage
(1)
CSO
(dB)
Fig.6
52
Vo
(dBmV)
−60
(2)
48
−70
(3)
44
−80
(4)
40
−90
0
200
400
600
36
1000
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.7
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
6
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD814
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
y M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
L
min.
p
Q
max.
8.8
4.15
3.85
2.4
REFERENCES
IEC
JEDEC
EIAJ
q1
q2
38.1 25.4 10.2
S
U1
U2
max.
4.2 44.75
8
EUROPEAN
PROJECTION
W
w
6-32 0.25
UNC
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
SOT115J
2001 Nov 01
q
7
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
BGD814
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2001 Nov 01
8
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
9
BGD814
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
10
BGD814
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
NOTES
2001 Nov 01
11
BGD814
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp12
Date of release: 2001
Nov 01
Document order number:
9397 750 08857