PHILIPS PIP3213

Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic surface mount
package.
PIP3213-R
QUICK REFERENCE DATA
SYMBOL
PARAMETER
IL
Nominal load current (ISO)
SYMBOL
PARAMETER
VBG
IL
Tj
RON
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
Tj = 25˚C
MIN.
UNIT
18
A
MAX.
UNIT
50
34
150
20
V
A
˚C
mΩ
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
FUNCTIONAL BLOCK DIAGRAM
BATT
STATUS
POWER
MOSFET
INPUT
CONTROL &
PROTECTION
CIRCUITS
LOAD
RG
GROUND
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN
PIN CONFIGURATION
SYMBOL
DESCRIPTION
mb
1
Ground
2
Input
I
3
(connected to mb)
S
4
Status
5
Load
L
4 5
Fig. 2.
mb
TOPFET
HSS
G
3
1 2
B
Fig. 3.
Battery
September 2001
1
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VBG
Continuous off-state supply voltage
IL
Continuous load current
PD
Tstg
Total power dissipation
Storage temperature
Tj
Continuous junction temperature1
Tsold
Mounting base temperature
MIN.
MAX.
UNIT
0
50
V
Tmb ≤ 90˚C
-
34
A
Tmb ≤ 25˚C
-55
98
175
W
˚C
-
150
˚C
-
260
˚C
-
16
32
V
V
3.2
-
kΩ
-5
5
mA
-50
50
mA
-
380
mJ
MIN.
MAX.
UNIT
-
2
kV
during soldering
Reverse battery voltages2
-VBG
-VBG
Continuous reverse voltage
Peak reverse voltage
Application information
RI, RS
External resistors3
to limit input, status currents
Input and status
II, IS
Continuous currents
II, IS
Repetitive peak currents
δ ≤ 0.1, tp = 300 µs
Inductive load clamping
IL = 15 A, VBG = 16 V
Non-repetitive clamping energy
Tj = 150 ˚C prior to turn-off
EBL
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
1.0
1.27
K/W
Thermal resistance4
Rth j-mb
Junction to mounting base
-
1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
September 2001
2
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VBG
Clamping voltages
Battery to ground
IG = 1 mA
50
55
65
V
VBL
-VLG
Battery to load
Negative load to ground
IL = IG = 1 mA
IL = 10 mA
50
18
55
23
65
28
V
V
-VLG
Negative load voltage1
IL = 15 A; tp = 300 µs
20
25
30
V
Supply voltage
battery to ground
5.5
-
35
V
-
-
20
µA
Tmb = 25˚C
-
0.1
-
2
20
µA
µA
Tmb = 25˚C
-
0.1
2
1
4
µA
mA
Tmb = 85˚C
18
-
-
A
2
VBG
Operating range
IB
Currents
Quiescent current3
IL
IG
IL
9 V ≤ VBG ≤ 16 V
VLG = 0 V
4
Off-state load current
5
Operating current
IL = 0 A
6
Nominal load current
Resistances
RON
RON
RG
VBL = VBG
On-state resistance
On-state resistance
Internal ground resistance
VBL = 0.5 V
VBG
IL
tp7
9 to 35 V
15 A
300 µs
25˚C
-
15
20
mΩ
300 µs
150˚C
25˚C
-
18
37
25
mΩ
mΩ
150˚C
-
-
45
mΩ
95
150
190
Ω
6V
15 A
IG = 10 mA
Tmb
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only.
7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
September 2001
3
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
INPUT CHARACTERISTICS
9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
II
Input current
VIG = 5 V
20
90
160
µA
VIG
Input clamping voltage
II = 200 µA
5.5
7
8.5
V
VIG(ON)
Input turn-on threshold voltage
-
2.4
3
V
VIG(OFF)
Input turn-off threshold voltage
1.5
2.1
-
V
∆VIG
Input turn-on hysteresis
-
0.3
-
V
II(ON)
Input turn-on current
VIG = 3 V
-
-
100
µA
II(OFF)
Input turn-off current
VIG = 1.5 V
10
-
-
µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
VSG
VSG
Status clamping voltage
Status low voltage
IS = 100 µA
IS = 100 µA
IS
IS
Status leakage current
Status saturation current1
MIN.
TYP.
MAX.
UNIT
5.5
-
7
-
8.5
1
V
V
Tmb = 25˚C
-
0.7
0.8
V
Tmb = 25˚C
-
0.1
15
1
µA
µA
2
7
12
mA
-
47
-
kΩ
MIN.
TYP.
MAX.
UNIT
0.45
1.5
3
A
-
0.3
-
A
VSG = 5 V
VSG = 5 V
Application information
RS
External pull-up resistor
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL
PARAMETER
CONDITIONS
Open circuit detection
9 V ≤ VBG ≤ 35 V
IL(TO)
Low current detect threshold
∆IL(TO)
Hysteresis
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
September 2001
4
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Undervoltage
VBG(UV)
Low supply threshold voltage1
2
4.2
5.5
V
∆VBG(UV)
Hysteresis
-
0.5
-
V
40
45
50
V
-
1
-
V
Overvoltage
VBG(OV)
High supply threshold voltage2
∆VBG(OV)
Hysteresis
TRUTH TABLE
ABNORMAL CONDITIONS
DETECTED
INPUT
SUPPLY
LOAD
LOAD
OUTPUT
STATUS
DESCRIPTION
UV
OV
LC
SC
OT
L
X
X
X
X
X
OFF
H
off
H
0
0
0
0
0
ON
H
on & normal
H
0
0
1
0
0
ON
L
on & low current detect
H
1
0
X
X
X
OFF
H
supply undervoltage lockout
H
0
1
X
0
0
OFF
H
supply overvoltage shutdown
H
0
0
0
1
X
OFF
L
SC tripped
H
0
0
0
0
1
OFF
L
OT shutdown3
KEY TO ABBREVIATIONS
L
H
X
0
1
logic low
logic high
don’t care
condition not present
condition present
UV
OV
LC
SC
OT
undervoltage
overvoltage
low current or open circuit load
short circuit
overtemperature
1 Undervoltage sensor causes the device to switch off and reset.
2 Overvoltage sensor causes the device to switch off to protect its load.
3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD
PROTECTION CHARACTERISTICS.
September 2001
5
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
OVERLOAD PROTECTION CHARACTERISTICS
5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
IL(lim)
Overload protection
Load current limiting
VBL = VBG
VBG ≥ 9 V
VBL(TO)
Short circuit load protection
Battery load threshold voltage1
td sc
Response time2
VBL > VBL(TO)
MIN.
TYP.
MAX.
UNIT
42
65
88
A
VBG = 16 V
8
10
12
V
VBG = 35 V
15
-
20
180
25
250
V
µs
150
170
190
˚C
-
10
-
˚C
MIN.
TYP.
MAX.
UNIT
Overtemperature protection
Tj(TO)
Threshold junction
temperature3
∆Tj(TO)
Hysteresis
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL
PARAMETER
CONDITIONS
During turn-on
from input going high
td on
dV/dton
Delay time
Rate of rise of load voltage
to 10% VL
30% to 70% VL
-
40
0.5
60
1
µs
V/µs
t on
Total switching time
to 90% VL
-
160
225
µs
td off
During turn-off
Delay time
from input going low
to 90% VL
-
50
70
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
70% to 30% VL
to 10% VL
-
0.5
80
1
115
V/µs
µs
MIN.
TYP.
MAX.
UNIT
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters.
SYMBOL
PARAMETER
CONDITIONS
Cig
Input capacitance
VBG = 13 V
-
15
20
pF
Cbl
Output capacitance
VBL = 13 V
-
425
600
pF
Csg
Status capacitance
VSG = 5 V
-
11
15
pF
1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has
operated, the input voltage must be toggled low for the switch to resume normal operation.
2 Measured from when the input goes high.
3 After cooling below the reset temperature the switch will resume normal operation.
September 2001
6
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT426
Fig.4. SOT426 surface mounting package1, centre pin connected to mounting base.
1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g.
For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.
September 2001
7
Rev 1.000
Philips Semiconductors
Product specification
TOPFET high side switch
SMD version
PIP3213-R
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS1
PRODUCT
STATUS2
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design.
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
September 2001
8
Rev 1.000