DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 BAP63-03 Silicon PIN diode Product specification Supersedes data of 2001 Apr 04 2001 May 18 Philips Semiconductors Product specification Silicon PIN diode BAP63-03 FEATURES PINNING • High speed switching for RF signals PIN DESCRIPTION • Low diode capacitance 1 cathode • Low diode forward resistance 2 anode • Very low series inductance • For applications up to 3 GHz. handbook, halfpage 1 APPLICATIONS 2 • RF attenuators and switches. MAM406 DESCRIPTION Marking code: D2. Planar PIN diode in a SOD323 small SMD plastic package. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg Tj 2001 May 18 CONDITIONS MIN. − MAX. 50 UNIT V − 100 mA − 500 mW storage temperature −65 +150 °C junction temperature −65 +150 °C Ts ≤ 90 °C 2 Philips Semiconductors Product specification Silicon PIN diode BAP63-03 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.95 1.1 V IR reverse leakage current VR = 35 V − 10 nA Cd diode capacitance VR = 0; f = 1 MHz 0.4 − pF VR = 1 V; f = 1 MHz 0.35 − pF VR = 20 V; f = 1 MHz 0.27 0.32 pF IF = 0.5 mA; f = 100 MHz; note 1 2.5 3.5 Ω rD |s21|2 |s21|2 |s21|2 |s21|2 |s21|2 diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss τL charge carrier life time LS series inductance IF = 1 mA; f = 100 MHz; note 1 1.95 3 Ω IF = 10 mA; f = 100 MHz; note 1 1.17 1.8 Ω IF = 100 mA; f = 100 MHz; note 1 0.9 1.5 Ω VR = 0; f = 900 MHz 15.4 − dB VR = 0; f = 1800 MHz 10.1 − dB VR = 0; f = 2450 MHz 7.8 − dB IF = 0.5 mA; f = 900 MHz 0.21 − dB IF = 0.5 mA; f = 1800 MHz 0.28 − dB IF = 0.5 mA; f = 2450 MHz 0.38 − dB IF = 1 mA; f = 900 MHz 0.18 − dB IF = 1 mA; f = 1800 MHz 0.26 − dB IF = 1 mA; f = 2450 MHz 0.35 − dB IF = 10 mA; f = 900 MHz 0.13 − dB IF = 10 mA; f = 1800 MHz 0.20 − dB IF = 10 mA; f = 2450 MHz 0.30 − dB IF = 100 mA; f = 900 MHz 0.10 − dB IF = 100 mA; f = 1800 MHz 0.18 − dB IF = 100 mA; f = 2450 MHz 0.28 − dB when switched from IF = 10 mA to 310 IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − ns 1.5 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 May 18 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 120 K/W Philips Semiconductors Product specification Silicon PIN diode BAP63-03 GRAPHICAL DATA MGW126 10 MGW130 500 handbook, halfpage handbook, halfpage Cd (fF) 400 rD (Ω) 300 1 200 100 10 −1 10 −1 1 10 I F (mA) 0 102 8 12 16 f = 1 MHz; Tj = 25 °C. Forward resistance as a function of forward current; typical values. Fig.3 Diode capacitance as a function of reverse voltage; typical values. MGW131 0 MGW132 0 handbook, halfpage 2 handbook, halfpage 2 | s 21| (dB) −0.1 20 VR (V) f = 100 MHz; Tj = 25 °C. Fig.2 4 0 | s 21| (1) (dB) −10 (2) (3) −0.2 −20 (4) −0.3 −30 −0.4 −0.5 0 1 (1) IF = 100 mA. (2) IF = 10 mA. 2 f (GHz) −40 3 2 f (GHz) 3 Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|s21|2) of the diode in on-state as a function of frequency; typical values. 2001 May 18 1 (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb = 25 °C. Fig.4 0 Fig.5 4 Isolation (|s21|2) of the diode in off-state as a function of frequency; typical values. Philips Semiconductors Product specification Silicon PIN diode BAP63-03 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads Q A A1 c Lp v M A HE A D 1 E 2 bp (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E HE Lp Q v mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323 2001 May 18 REFERENCES IEC JEDEC EIAJ SC-76 5 EUROPEAN PROJECTION ISSUE DATE 98-09-14 99-09-13 Philips Semiconductors Product specification Silicon PIN diode BAP63-03 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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