BTS 730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse width reduction and overload shutdown • Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection 1) • Timing frequency adjustable • Controlled switching rise and fall times • Maximum current internally limited • Protection against loss of GND 2) • Electrostatic discharge (ESD) protection • Package: P-DSO-20-6 (SMD) Note: Switching frequency is programmed with an external capacitor. Type Ordering Code Marking Package BTS730 Q67060-S7007-A2 - P-DSO-20-6 Parameter Symbol Values Unit Active overvoltage prodection Vbb (AZ) >40 V Short circuit current ISC self-limited - Input current (DC) ICt 2 mA Pin1 (Ct) and pin19 (VC) IVC 2 mA Operating temperature range Tj -40...+150 °C Storage temperature range Tstg -50...+150 Ptot 3 W 2 W K/W Maximum Ratings Power dissipation 3) Ta=25°C Ta=85°C 3) Rth JC ≤ 35 chip-ambient Rth JA ≤ 75 Thermal resistance chip-case 1) 2) 3) With 150Ω resistor in signal GND connection. Potential between signal GND and load GND >0.5V 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm (one layer,70µm thick) copper area for Vbb conection, PCB is vertical without air blowing. Semiconductor Group 1 12.96 BTS 730 Block Diagram Over / UnderOvervoltage Prodtection Temperature voltage Detection (4,5,6,7) Sensor (14,15,16,17) Timing Pulse - width Generator Comparator Vbb Pump and Logic Current Limiting Voltage Regulator (18) GND (1) (20) Ct Timing Cap. 68nF (19) VREF VC (2) (3) CB1 (8,9,10,11,12,13) OUT CB2 Bootstrap Capacitor 22nF 25k Signal GND Load GND Pin Definitions and Funktions Pin Configuration (top view) Pin 1 Ct 1 20 VREF CB1 CB2 Vbb Vbb Vbb Vbb OUT OUT OUT 2 3 4 5 6 7 8 9 10 19 VC 18 GND 17 Vbb 16 Vbb 15 Vbb 14 Vbb 13 OUT 12 OUT 11 OUT Symbol Funktions Ct Timing capacitor for frequency CB1 2 Bootstrap capacitor CB2 3 Vbb 4,5,6,7 Supply voltage 14,15,16,1 (Leadframe connected) 7 8,9,10 OUT Output 11,12,13 18 GND Ground VC 19 Voltage for PWM-Control VREF 20 Reference Voltage Semiconductor Group 2 % BTS 730 Electrical Characteristics at Tj = 25 C, unless otherwise specified.CBootstrap = 22nF i Parameter Symbol min. On-state resistance RON IL=3A, Vbb=12V Operating voltage Vbb Tj = -40 ...+150 C Nominal current, IL-ISO calculated value ISO-standard: Vbb-VOUT ≤ 0.5V, Tc=85°C Load current limit ILLim Vbb-VOUT> 1V Undervoltage shutdown Vbb(LOW) IL = 3A Overvoltage shutdown Vbb(HI) IL = 3A Max.output voltage (RMS) VRMSmax IL = 3A, Vbb > 12 V Reference voltage VREF IREF= 10mA Reference current IREF pin 18 (GND) to pin 20 (VREF) short Internal current IR consumption during operation, measured in PWM gap Bootstrap voltage, pin 2 VB (CB1) to pin 3 (CB2) Vbb = 12 V, PWM frequency fPWM Tc = -40 ... +150 °C, Ct = 68 nF Max. pulse duty factor Dimax IL = 3A, VC=0V , (50% VOUT) Min. pulse duty factor Dimin IL = 3A, VC=0V , (50% VOUT) Slew rate "on" du/dt(on) 10 ... 90% IOUT Slew rate "off" du/dt(off) 90 ... 10% IOUT Thermal overload trip Tj temperature i 1) 2) 5.9 1) 3 Unit max. 70 mΩ 16.9 2) V - A - A - - 20 3 4.2 5.4 V 17 18 19 V 14 V 3 V 12 - 2 - 150 - - - 5 10 50 - 150 3 100 98 V Hz - 8 mA mA - - 95 Note: undervoltage shutdown Note: overvoltage shutdown Semiconductor Group Values typ. - % 14 % 20 - 120 mV/µs 20 - 120 mV/µs - - °C BTS 730 Circuits Analog Logic-InputVC V REF (20) V (19) (19) Voltage Regulator 2µ A C GND (18) Pulse-width Comparator 6V max. 2mA Triangular WaveformGenerator Input C t (1) V bb 6µ A C (1) t GND (18) Timing Generator 6V max. 2mA Voltage Sensor (typ) Undervoltage Sensor Overvoltage Sensor +V bb V bb < 4.2 V +V bb Signal to the logic unit V bb > 18 V GND Semiconductor Group GND 4 Signal to the logic unit BTS 730 Application Note Dimming of dashboard lighting + V bb 4,5,6,7 14,15,16,17 20 25 k O 19 220nF V bb VREF BTS730 VC GND Ct 18 1 C B1 C B2 OUT 2 3 68nF 8,9,10 11,12,13 22nF Load 150 O 150 O Resistor for reverse battery and load dump prodection Package Outline P-DSO-20-6 Dimensions in mm Semiconductor Group 5 BTS 730 mΩ Typ.on-state resistance R ON= f (T C ) Typ. Load current limit I LLim = f (T C ) A 140 30 120 25 100 20 80 15 60 10 40 20 5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 TC °C V 50 75 100 125 150 TC °C Typ. undervoltage shutdown V bb(LOW) = f (T C) Typ. overvoltage shutdown V bb(HI) = f (T C ) V 6,0 20,0 5,5 19,5 5,0 19,0 4,5 18,5 4,0 18,0 3,5 17,5 3,0 -50 -25 0 25 50 75 100 125 17,0 150 -50 TC °C Semiconductor Group -25 0 25 50 TC °C 6 75 100 125 150 BTS 730 Typ. min. puls duty factor D im in = f (T C ) % Typ. max. puls duty factor D im ax = f (T C ) % 15 100 14 13 99 12 11 98 10 9 97 8 7 96 6 5 95 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 TC °C 75 100 125 150 125 150 TC °C Typ. PWM Frequency f PWM = f (T C ) Hz 50 Typ. max. output voltage V RMSm ax = f (T C ), Vbb > 12V V 100 14,0 90 13,5 80 13,0 70 12,5 60 50 12,0 -50 -25 0 25 50 75 100 125 150 -50 TC °C Semiconductor Group -25 0 25 50 TC °C 7 75 100