Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V 1.5 0.25 1750 850 5 8 100 1.0 0.6 V V A A W V A µs PINNING - SOT404 PIN Tmb ≤ 25 ˚C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A PIN CONFIGURATION SYMBOL DESCRIPTION c mb 1 base 2 collector 3 emitter mb collector b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1750 850 5 8 3 5 100 4 100 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.25 K/W 55 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Rth j-a Thermal resistance junction to ambient February 1998 CONDITIONS minimum footprint, FR4 board 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES ICES ICES Collector cut-off current 1 IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = 1500 V VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 12 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 1.5 A; IB = 0.3 A IC = 1.5 A; IB = 0.3 A IC = 5 mA; VCE = 10 V IC = 400 mA; VCE = 3 V IC = 1.5 A; VCE = 1 V MIN. TYP. MAX. UNIT - - 1.0 20 2.0 mA µA mA 750 - 1 - mA V 8 12 5 18 7 1.0 1.3 35 - V V TYP. MAX. UNIT 1.1 5 0.75 1.5 6.5 1.0 µs µs µs 2.0 0.25 3.0 0.6 µs µs 2.2 0.2 3.3 0.7 µs µs DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ton ts tf Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time ICon = 1.5 A; IBon = -IBoff = 0.3 A Switching times (inductive load) ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 300R 30-60 Hz 100 1R 0 6V VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). February 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB VCC VCC RL VIM LC RB 0 VCL T.U.T. IBon LB tp T.U.T. -VBB T Fig.6. Test Circuit RBSOA. VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V; LB = 1 µH Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon 90 % ICon 90 % 90 % IC IC 10 % ts ton tf 10 % toff ts toff IBon IB tr t IBon IB 10 % tf 30ns t -IBoff -IBoff Fig.4. Switching times waveforms with resistive load. Fig.7. Switching times waveforms with inductive load. VCC 120 Normalised Power Derating PD% 110 100 90 80 LC 70 60 50 IBon 40 LB 30 T.U.T. 20 10 -VBB 0 0 Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LB = 1 uH February 1998 20 40 60 80 100 Tmb / C 120 140 Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f (Tmb) 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 1E+01 Zth / (K/W) BU1706AB BU1706A 1.2 VBESAT / V BU1706A Tj = 25 C 1.1 1E+00 1E-01 0.5 Tj = 125 C 1 0.2 0.1 0.05 0.9 0.02 PD tp D= IC = 3A tp T 0.8 t 0.7 1E-02 D=0 1E-03 1E-07 T 0.6 1E-05 1E-03 t/s 1E-01 0 1E+01 Fig.9. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 1.2 2A 1.5 A 0.5 A 2 IB / A 3 4 Fig.12. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC BU1706A VBESAT / V 1 10 VCESAT / V BU1706A 1.1 Tj = 25 C 1 Tj = 125 C 1 0.9 3A 2A 0.8 1.5 A IC/IB = 0.7 4 0.6 5 0.5 6 IC = 0.5A 0.1 Tj = 25 C Tj = 125 C 0.4 0.1 1 IC / A 0.01 0.01 10 VCESAT / V Fig.13. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC BU1706A 100 h FE BU1706A IC/IB = 0.9 10 1 IB / A Fig.10. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB 1 0.1 5V 6 0.8 5 0.7 10 4 0.6 1V 0.5 0.4 Tj = 25 C 0.3 Tj = 125 C Tj = 25 C 1 Tj = 125 C 0.2 0.1 0 0.1 1 IC / A 0.1 0.01 10 1 10 IC / A Fig.11. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB February 1998 0.1 Fig.14. Typical DC current gain. hFE = f(IC); parameter VCE 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB IC / A 10 6 IC / A BU1706A I CM 5 4 I CDC 3 2 P tot 1 1 0 0 tp = 0.1 400 800 1200 VCE / V 1600 2000 Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax 100 us 1 ms 10 ms DC 0.01 1 10 VCE / V 100 1000 Fig.15. Forward bias safe operating area. Tmb = 25 ˚C I II NB: Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. February 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.17. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". February 1998 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 7 Rev 1.000