PMBT3906YS 40 V, 200 mA PNP/PNP general-purpose double transistor Rev. 02 — 13 May 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PMBT3906YS SOT363 JEITA NPN/NPN complement NPN/PNP complement Package configuration SC-88 PMBT3904YS PMBT3946YPN very small 1.2 Features n General-purpose double transistor n Board-space reduction n AEC-Q101 qualified 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit open base - - −40 V - - −200 mA 100 180 300 Per transistor VCEO collector-emitter voltage IC collector current hFE DC current gain VCE = −1 V; IC = −10 mA PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 3 sym018 3. Ordering information Table 4. Ordering information Type number PMBT3906YS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5. Marking codes Type number Marking code[1] PMBT3906YS BD* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 2 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −6 V IC collector current - −200 mA ICM peak collector current single pulse; tp ≤ 1 ms - −200 mA IBM peak base current single pulse; tp ≤ 1 ms - −100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 230 mW Ptot total power dissipation Tamb ≤ 25 °C [1] - 350 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Per transistor Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab113 400 Ptot (mW) 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 3 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - - 543 K/W - - 290 K/W - - 357 K/W Per transistor [1] Per device thermal resistance from junction to ambient Rth(j-a) [1] [1] in free air Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab114 103 δ=1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 0.01 10 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 4 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −50 nA IEBO emitter-base cut-off current VEB = −6 V; IC = 0 A - - −50 nA hFE DC current gain VCE = −1 V IC = −0.1 mA 60 180 - IC = −1 mA 80 180 - IC = −10 mA 100 180 300 IC = −50 mA 60 130 - IC = −100 mA 30 50 - IC = −10 mA; IB = −1 mA - −100 −250 mV IC = −50 mA; IB = −5 mA - −165 −400 mV IC = −10 mA; IB = −1 mA - −750 −850 mV IC = −50 mA; IB = −5 mA - −850 −950 mV VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage fT transition frequency VCE = −20 V; IC = −10 mA; f = 100 MHz 250 - - MHz Cc collector capacitance VCB = −5 V; IE = ie = 0 A; f = 1 MHz - - 4.5 pF Ce emitter capacitance VBE = −0.5 V; IC = ic = 0 A; f = 1 MHz - - 10 pF NF noise figure VCE = −5 V; IC = −100 µA; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - - 4 dB td delay time - - 35 ns tr rise time ton turn-on time VCC = −3 V; IC = −10 mA; IBon = −1 mA; IBoff = 1 mA ts - - 35 ns - - 70 ns storage time - - 225 ns tf fall time - - 75 ns toff turn-off time - - 300 ns PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 5 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 006aab120 400 hFE 006aab121 −0.3 (1) IB (mA) = −5.0 −4.5 −4.0 −3.5 −3.0 IC (A) 300 −2.5 −2.0 −0.2 −1.5 200 −1.0 (2) −0.1 −0.5 (3) 100 0 −10−1 −1 −10 −102 0 −103 0 −2 −4 −6 IC (mA) VCE = −1 V −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values 006aab123 −1.2 Fig 4. Collector current as a function of collector-emitter voltage; typical values 006aab124 −1.2 VBE (V) VBEsat (V) −1.0 −1.0 (1) (1) −0.8 (2) −0.6 −0.8 (2) −0.6 (3) (3) −0.4 −0.4 −0.2 −10−1 −1 −10 −102 −103 −0.2 −10−1 −1 IC (mA) VCE = −1 V −103 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values Fig 6. Base-emitter saturation voltage as a function of collector current; typical values PMBT3906YS_2 Product data sheet −102 IC (mA) (1) Tamb = −55 °C Fig 5. −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 6 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 006aab122 −1 VCEsat (V) (1) −10−1 (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 8. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 7 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm Fig 9. 06-03-16 Package outline SOT363 (SC-88) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PMBT3906YS SOT363 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PMBT3906YS_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 8 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 11. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 10. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 11. Wave soldering footprint SOT363 (SC-88) PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 9 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3906YS_2 20090513 Product data sheet - PMBT3906YS_1 - - Modifications: PMBT3906YS_1 • Figure 4: amended 20080306 Product data sheet PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 10 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMBT3906YS_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 13 May 2009 11 of 12 PMBT3906YS NXP Semiconductors 40 V, 200 mA PNP/PNP general-purpose double transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 May 2009 Document identifier: PMBT3906YS_2