A R A R A R A R A R FT FT FT FT FT R D FT A FT A FT A FT A R D R D R D R D FT A FT FT A A R R D D R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier F A FT A FT A D FT FT A A R R D D R D 1. Product profile R D R D Objective data sheet R D Rev. 00.07 — 16 July 2009 D D D D D BGA7124 FT A D R 1.1 General description A The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-cost leadless surface-mount package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz. 1.2 Features O M PA D E N NY TI A L 400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 25 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical performance 3.3 V / 5 V single supply operation Power savings features: Simple quiescent current adjustment allows class-AB operation Logic-level shutdown control pin reduces supply current to 4 μA ESD protection at all pins O N Wireless infrastructure (base station, repeater) E-metering Broadband CPE Satellite Master Antenna TV (SMATV) Industrial applications W-LAN / ISM / RFID C FI C 1.3 Applications 1.4 Quick reference data Table 1. Quick reference data ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, ; unless otherwise specified. Symbol Parameter ICq adjustable quiescent collector current f frequency Conditions [1] Min Typ Max Unit 5 - 170 mA 400 - 2700 MHz D D D D D R D - dB - 25 - dBm - 38 - dBm FT [2] Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 850 MHz to 1000 MHz; f2 = 1800 MHz to 2400 MHz; higher IMD3 product. [3] Applicable to class-A operation; ICq = <tbd> mA. 2.1 Pinning PA D E N NY TI A L 2. Pinning information 7 6 5 2 3 4 FI C O M 8 1 SOT908-1 C O N GND paddle Transparent top view Fig 1. Pin configuration BGA7124_1 Objective data sheet © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 2 of 10 R Operation outside this range is possible but parameters are not guaranteed. D [2][3] FT A f = 2140 MHz R D f = 2140 MHz output third-order intercept point A 15 D - A R f = 2140 MHz output power at 1 dB gain compression Unit FT A Max IP3O F A D R D Typ PL(1dB) [1] FT A FT A Min [3] [3] R D R D R D gain power R D FT A FT FT A A R R D D R D Gp Conditions FT A FT A FT A FT A R D R D R D Table 1. Quick reference data …continued ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, ; unless otherwise specified. Parameter FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier Symbol A R A R A R A R A R NXP Semiconductors D D D D D R D D not connected RF_OUT/VCC 2, 3 RF output for the power amplifier and DC supply input for the RF transistor collector[1] VCC(bias) 5 bias supply voltage[2] SHDN 6 shutdown control function enabled / disabled RF_IN 7 RF input for the power amplifier[1] ICQ_ADJ 8 ICq quiescent collector current adjustment by an external resistor GND GND paddle RF ground and DC ground[3] D R A RF decoupled. [3] The center metal base of the SOT908-1 also functions as heatsink for the power amplifier. PA D E N NY TI A L This pin is DC-coupled and requires an external DC-blocking capacitor. [2] 3. Ordering information FT A [1] Ordering information Type number Package Name O M HVSON8 Description Version plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 × 3 × 0.85 mm SOT908-1 FI C 4. Functional diagram ICQ_ADJ O N VCC(BIAS) bias enable bandgap V/I converter C SHDN RF_IN RF_OUT / VCC GND Fig 2. Functional diagram BGA7124_1 Objective data sheet D 1, 4 R D n.c. FT FT A A R R D Description F A FT A FT A Pin BGA7124 R D R D R D Symbol Table 3. R D FT A FT FT A A R R D D R D Pin description FT A FT A FT A FT A R D R D R D 2.2 Pin description FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier Table 2. A R A R A R A R A R NXP Semiconductors © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 3 of 10 D D D D D R D R D FT A FT FT A A R R D D R D D shutdown control enabled 0 digital logic TX medium power MMIC transmit mode shutdown control enabled 1 digital logic FT A D supply voltage PA D E N NY TI A L Conditions Max Unit - 5.2 V ICC supply current - <tbd> mA Pi(RF) RF input power - <tbd> dBm Ptot total power dissipation - <tbd> W Tcase case temperature −40 +85 °C Tj junction temperature - 150 °C M 7. Thermal characteristics VCC = 5.2 V Min Parameter Rth(j-case) thermal resistance from junction to case C Typ Max Unit Tcase = 85 °C; VCC = 5 V; ICC = 85 mA 25 30 K/W N 8. Static characteristics Conditions FI Thermal characteristics Symbol O Table 6. C O Table 7. Characteristics ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 3.3 V / 5 V; Tcase = 25 °C, ; unless otherwise specified. Symbol Parameter VCC supply voltage Conditions Min Typ Max Unit range for VCC = <tbd> V (typ) 3.0 3.3 3.6 V range for VCC = <tbd> V (typ) 4.8 5.0 5.2 V 5 - 170 mA ICq adjustable quiescent collector current ICC supply current VCC = 5.2 V ICC(SHDN) shutdown supply current SHDN = VI(D)L(SHDN); VI(D)L(SHDN) shutdown logic LOW digital input voltage VI(D)H(SHDN) shutdown logic HIGH digital input voltage [1] II(D)L(SHDN) shutdown logic LOW digital input current SHDN = VI(D)L(SHDN) [1] II(D)H(SHDN) shutdown logic HIGH digital input current SHDN = VI(D)H(SHDN) [1] [1] - - <tbd> mA 2 4 <tbd> μA 0 - 1.5 V 2.5 - VCC V - - 1 μA - - 1 μA Defined across VCC = 3.0 V to 3.6 V and 4.8 V to 5.2 V; Tcase = −40 °C to +85 °C. BGA7124_1 Objective data sheet © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 4 of 10 A Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). R 6. Limiting values VCC D medium power MMIC fully off; minimal supply current R D Idle FT FT A A R R D Function description Parameter F A FT A FT A SHDN Unit R D R D R D Shutdown control Mode Mode description Symbol FT A FT A FT A FT A R D R D R D 5. Shutdown control FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier Table 4. A R A R A R A R A R NXP Semiconductors D D D D D A R A R A R A R A R R D FT A FT A FT A FT A R D R D R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier R D FT A FT FT A A R R D D R D F A FT A FT A R D R D R D 9. Dynamic characteristics FT FT FT FT BGA7124 FT NXP Semiconductors D FT FT A A R R D R D D Table 8. Characteristics at VCC = 5 V ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 5 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. Parameter 400 - 2700 MHz [2] - 23 - dB f = 1900 MHz [2] - 16 - dB f = 2140 MHz [2] - 15 - dB f = 2450 MHz [2] - <tbd> - dB f = 900 MHz [2] - 25 - dBm f = 1900 MHz [2] - 25 - dBm f = 2140 MHz [2] - 25 - dBm [2] - <tbd> - dB f = 900 MHz [2][3] - 38 - dBm f = 1900 MHz [2][3] - 38 - dBm f = 2140 MHz [2][3] - 38 - dBm f = 2450 MHz [2][3] - <tbd> - dB f = 900 MHz [2][4] - 4.5 - dB f = 1900 MHz [2][4] - 5.5 - dB f = 2140 MHz [2][4] - 6.5 - dB f = 2450 MHz [2][4] - <tbd> - dB f = 900 MHz [2] - −12.0 - dB f = 1900 MHz [2] - −10.0 - dB f = 2140 MHz [2] - −11.0 - dB f = 2450 MHz [2] - <tbd> - dB f = 900 MHz [2] - −8.0 - dB f = 1900 MHz [2] - −14.0 - dB f = 2140 MHz [2] - −13.0 - dB f = 2450 MHz [2] - <tbd> - dB VCC = 5 V [2] - 175 - mA f = 2450 MHz IP3O noise figure input return loss N output return loss C O RLout FI C RLin O M NF output third-order intercept point supply current ICC [1] Operation outside this range is possible but parameters are not guaranteed. [2] Applicable to class-A operation; ICq = 175 mA. [3] Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 840 MHz to 960 MHz; f2 = 1900 MHz to 2200 MHz; higher IMD3 product. [4] Defined at PIN = −40 dBm; small signal conditions. BGA7124_1 Objective data sheet Unit f = 900 MHz PA D E N NY TI A L output power at 1 dB gain compression Max © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 5 of 10 A PL(1dB) Typ R frequency gain power Min [1] D f Gp Conditions FT A Symbol D D D D D R D D <tbd> - dB f = 1900 MHz - 16 - dB f = 2140 MHz [2][3] - <tbd> - dB f = 2450 MHz [2][3] - <tbd> - dB f = 900 MHz [2][3] - <tbd> - dBm f = 1900 MHz [2][3] - 23 - dBm f = 2140 MHz [2][3] - <tbd> - dBm f = 2450 MHz [2][3] - <tbd> - dB f = 900 MHz [2][3][4] - <tbd> - dBm f = 1900 MHz [2][3][4] - 36 - dBm f = 2140 MHz [2][3][4] - <tbd> - dBm f = 2450 MHz [2][3][4] - <tbd> - dB f = 900 MHz [2][3][5] - <tbd> - dB f = 1900 MHz [2][3][5] - 4.7 - dB f = 2140 MHz [2][3][5] - <tbd> - dB f = 2450 MHz [2][3][5] - <tbd> - dB f = 900 MHz [3] - <tbd> - dB f = 1900 MHz [3] - <tbd> - dB f = 2140 MHz [3] - <tbd> - dB f = 2450 MHz [3] - <tbd> - dB f = 900 MHz [3] - <tbd> - dB f = 1900 MHz [3] - <tbd> - dB f = 2140 MHz [3] - <tbd> - dB f = 2450 MHz [3] - <tbd> - dB [2][3] - 175 - mA PA D E N NY TI A L M O FI C - [2][3] N O VCC = 3.3 V C [1] [2][3] Operation outside this range is possible but parameters are not guaranteed. [2] Defined across VCC = 3.0 V to 3.6 V; Tcase = −40 °C to +85 °C. [3] Applicable to class-A operation; ICq = 175 mA. [4] Po(tone) = 8 dBm; tone spacing = 10 MHz, f1 = 850 MHz to 1000 MHz; f2 = 1800 MHz to 2400 MHz; higher IMD3 product. [5] Defined at PIN = −40 dBm; small signal conditions. 10. Reliability information Table 10. Reliability Life test Conditions HTOL Intrinsic failure rate confidence level 60 %; Tj = 55 °C; activation energy = 0.7 eV; acceleration factor determined by Arrhenius BGA7124_1 Objective data sheet XX © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 6 of 10 A output return loss supply current ICC f = 900 MHz R RLout Unit D input return loss MHz D RLin 2700 FT noise figure - FT A NF output third-order intercept point Max 400 R D IP3O output power at 1 dB gain compression Typ FT A PL(1dB) Min A R R D gain power [1] F A FT A FT A Gp Conditions R D R D R D frequency R D FT A FT FT A A R R D D R D Parameter FT A FT A FT A FT A R D R D R D Table 9. Characteristics at VCC = 3.3 V ZS = ZL = 50 Ω, SHDN = VI(D)H(SHDN) (shutdown disabled). Typical values at VCC = 3.3 V; Tcase = 25 °C, NXP application circuit; unless otherwise specified. f FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier Symbol A R A R A R A R A R NXP Semiconductors D D D D D A R A R A R A R A R R D R D FT A FT FT A A R R D D R D F A FT A FT A R D R D R D D FT FT A A R R D D HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3 x 3 x 0.85 mm FT A FT A FT A FT A R D R D R D 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier 11. Package outline FT FT FT FT BGA7124 FT NXP Semiconductors R D SOT908-1 FT A D R A 0 1 2 mm scale X B A PA D E N NY TI A L D E A A1 c e1 terminal 1 index area e 4 v w M M C C A B C y1 C y exposed tie bar (4×) N FI C L b O 1 M detail X terminal 1 index area C O Eh 8 exposed tie bar (4×) 5 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.3 0.2 0.2 3.1 2.9 2.25 1.95 3.1 2.9 1.65 1.35 0.5 1.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT908-1 Fig 3. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-09-26 05-10-05 MO-229 Package outline SOT908-1 (HVSON8) BGA7124_1 Objective data sheet © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 7 of 10 D D D D D R D Monolithic Microwave Integrated Circuit RFID Radio Frequency IDentification FT A D R A Transmit W-LAN Wideband Code Division Multiple Access PA D E N NY TI A L TX Data sheet status Change notice Supersedes Objective data sheet - - C O N FI C O M <tbd> BGA7124_1 Objective data sheet © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 D MMIC FT Industrial, Scientific and Medical BGA7124_1 A R High Temperature Operating Life ISM R D HTOL Release date D FT A ElectroStatic Discharge F A FT A R D ESD R D R D FT A Customer-Premises Equipment Document ID R D FT R D CPE Revision history FT A A R FT A Description 13. Revision history Table 12. R D D R D Abbreviations Acronym FT A FT A FT A FT A R D R D R D 12. Abbreviations FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier Table 11. A R A R A R A R A R NXP Semiconductors 8 of 10 D D D D D R D R D FT A FT FT A A R R D D R D D FT FT A A R R D This document contains data from the preliminary specification. Production This document contains the product specification. A Qualification Product [short] data sheet R Preliminary [short] data sheet D This document contains data from the objective specification for product development. FT A Definition Development Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. N FI C NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. PA D E N NY TI A L 14.3 Disclaimers O M Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. C O Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGA7124_1 Objective data sheet D R D Product status[3] Objective [short] data sheet Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. F A FT A FT A Document status[1][2] 14.2 Definitions R D R D R D 14.1 Data sheet status FT A FT A FT A FT A R D R D R D 14. Legal information FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier [1] A R A R A R A R A R NXP Semiconductors © NXP B.V. 2009. All rights reserved. Rev. 00.07 — 16 July 2009 9 of 10 D D D D D R D R D FT A FT FT A A R R D D R D D FT FT A A R R D FT A D R M PA D E N NY TI A L A O D R D C O N FI C F A FT A FT A R D R D R D Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Shutdown control . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Reliability information . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 FT A FT A FT A FT A R D R D R D 16. Contents FT FT FT FT FT BGA7124 400 MHz to 2700 MHz 1/4 W high linearity Si amplifier 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 A R A R A R A R A R NXP Semiconductors Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 July 2009 Document identifier: BGA7124_1