PHILIPS MZ0912B50Y

DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Interdigitated structure provides
high emitter efficiency
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Input and output matching cell
allows an easier design of circuits.
MZ0912B50Y
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
broadband amplifier.
MODE OF
OPERATION
f
(GHz)
Class C;
tp = 10 µs; δ = 1%
VCC
(V)
0.960 to 1.215 50
PL
(W)
>50
Gp
(dB)
>7
ηC
(%)
>42
Zi/ZL (Ω)
see Figs 6
and 7
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
handbook, halfpage
1
c
b
DESCRIPTION
3
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
2
Top view
MAM314
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCEO
collector-emitter voltage
open base
−
20
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
60
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
tp ≤ 10 µs; δ ≤ 10%
−
3
A
Ptot
total power dissipation (peak power)
Tmb = 75 °C; tp ≤ 10 µs; δ ≤ 10%
−
150
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MGL051
180
handbook, halfpage
Ptot
(W)
120
60
0
−50
0
100
Tmb (°C)
200
tp = 10 µs; δ = 10%; Ptot max = 150 W.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
THERMAL CHARACTERISTICS
Tj = 125 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
CW
4.9
K/W
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
CW; note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
notes 1 and 2
0.85
K/W
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp = 10 µs; δ = 10%.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector cut-off current
MAX.
UNIT
VCB = 65 V; IE = 0
20
mA
VCB = 50 V; IE = 0
2
mA
ICES
collector cut-off current
VCE = 60 V; RBE = 0 Ω
20
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
200
µA
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.3 and working in class C broadband
mode in pulse; note 1.
MODE OF OPERATION
Class C;
tp = 10 µs; δ = 10%
f
(GHz)
VCC
(V)(2)
PL
(W)
Gp
(dB)
ηC
(%)
0.960 to 1.215
50
>50
typ. 60
>7
typ. 8
>42
typ. 44
Zi/ZL
(Ω)
see Figs 6
and 7
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
List of components (see Fig.3).
COMPONENT
DESCRIPTION
VALUE
L1, L2
0.65 mm diameter copper wire −
L3
4 turns 0.65 mm diameter
copper wire;
C1
capacitor
DIMENSIONS
CATALOGUE NO.
total length = 12 mm;
height of loop = 9 mm
−
−
int. dia. 3 mm; l = 5 mm
−
100 pF
−
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10 µF; 50 V
−
−
C3
electrolytic capacitor
470 µF; 63 V −
−
C4
feedthrough bypass capacitor
−
−
Erie, ref. 1250-003
C5, C6
variable gigatrim capacitor
0.6 to 4.5 pF
−
Tekelec, ref. 727.1
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
30 mm
handbook, full pagewidth
9
2
4.5
2.5
30 mm
10
3
3
1
2
9
3
20
40
mm
2
9
11
40
mm
6.5
12
0.635
0.635
5
5
MCD634
handbook, full pagewidth
+VCC
C3
C4
C2
L1
L3
C1
L2
C5
MGL064
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Broadband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
MGL052
70
MGL053
50
handbook, halfpage
handbook, halfpage
PL
(W)
ηC
(%)
60
45
50
0.95
1.05
1.15
f (GHz)
40
0.95
1.25
1.05
1.15
f (GHz)
1.25
VCC = 50 V; tp = 10 µs; δ = 10%.
Fig.4
Load power as a function of frequency;
(In broadband test circuit as shown in
Fig.3).
Fig.5
Collector efficiency as a function of
frequency; (In broadband test circuit as
shown in Fig.3).
1
handbook, full pagewidth
0.5
2
0.960 GHz
0.2
5
1.215 GHz
10
+j
0
0.2
0.5
1
2
5
∞
10
−j
10
5
0.2
2
0.5
1
MGL049
VCC = 50 V; Zo = 10 Ω; PL = 50 W.
Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
1
handbook, full pagewidth
0.5
2
0.2
5
1.215 GHz
+j
0
0.2
0.5
0.960 GHz
1
10
2
5
∞
10
−j
10
5
0.2
2
0.5
1
MGL050
VCC = 50 V; Zo = 10 Ω; PL = 50 W.
Fig.7 Input impedance as a function of frequency, associated with optimum load impedance.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
PACKAGE OUTLINE
24 max
handbook, full pagewidth
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
3.4
3.2
10.5
max
23
max
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
Fig.8 SOT443A.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01736