PHILIPS 1PS79SB31

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB31
Schottky barrier diode
Product data sheet
2002 Jan 11
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB31
;
FEATURES
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
handbook, halfpage
APPLICATIONS
• Ultra high-speed switching
k
a
Top view
• Voltage clamping
• Protection circuits
MAM403
Marking code: G3.
The marking bar indicates the cathode.
• Low current rectification
• Low power consumption applications (e.g. hand-held
devices).
Fig.1
Simplified outline SOD523 (SC-79) and
symbol.
DESCRIPTION
Planar Schottky barrier diode in a SOD523 (SC-79) ultra
small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
−
30
V
−
200
mA
−
300
mA
−
1 000
mA
storage temperature
−65
+150
°C
junction temperature
−
125
°C
operating ambient temperature
−65
+125
°C
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method
Tstg
Tj
Tamb
2002 Jan 11
MIN.
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB31
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
see Fig.2;
IF = 0.1 mA
130
190
mV
IF = 1 mA
190
250
mV
IF = 10 mA
255
300
mV
IF = 100 mA
355
410
mV
IF = 200 mA
420
500
mV
IR
continuous reverse current
VR = 10 V; note 1; see Fig.3
2.5
30
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4
20
25
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2002 Jan 11
3
VALUE
UNIT
450
K/W
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB31
GRAPHICAL DATA
MGU517
103
handbook, halfpage
MGU518
104
handbook, halfpage
IR
(μA)
IF
(mA)
(1)
103
102
(2)
102
(1)
(2)
10
(3)
10
(3)
1
1
0
0.2
0.4
0.8
0.6
10−1
1
VF (V)
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MGU519
40
handbook, halfpage
Cd
(pF)
30
20
10
0
0
10
20
VR (V)
30
(1) f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 Jan 11
4
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB31
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2002 Jan 11
REFERENCES
IEC
JEDEC
JEITA
SC-79
5
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
NXP Semiconductors
Product data sheet
Schottky barrier diode
1PS79SB31
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jan 11
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2002 Jan 11
Document order number: 9397 750 08964