DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. handbook, 2 columns 3 PINNING APPLICATION It is intended as a general purpose transistor for wideband applications up to 2 GHz. PIN DESCRIPTION 1 base 2 emitter 3 collector 1 2 Top view MBC870 Marking code: W1. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − −20 V VCEO collector-emitter voltage open base − − −15 V IC collector current (DC) − − −35 mA Ptot total power dissipation up to Ts = 93 °C; note 1 − − 300 mW hFE DC current gain IC = −15 mA; VCE = −10 V 20 50 − Cre feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = −15 mA; VCE = −10 V; f = 500 MHz − 4 − GHz GUM maximum unilateral power gain IC = −15 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 17 − dB F noise figure − 2.5 − dB Tj junction temperature − − 150 °C IC = −5 mA; VCE = −10 V; f = 500 MHz Note 1. Ts is the temperature at the soldering point of the collector pin. May 1994 2 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −15 V VEBO emitter-base voltage open collector − −2 V IC collector current (DC) − −25 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 93 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 93 °C; note 1 VALUE UNIT 190 K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER ICBO collector cut-off current CONDITIONS IE = 0; VCB = −10 V MIN. − TYP. − MAX. −50 UNIT nA hFE DC current gain IC = −15 mA; VCE = −10 V 20 50 − fT transition frequency IC = −15 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 4 − GHz Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 0.65 − pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 0.75 − pF Cre feedback capacitance IC = 0; VCB = −10 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = −15 mA; VCE = −10 V; f = 500 MHz; Tamb = 25 °C − 17 − dB IC = −15 mA; VCE = −10 V; f = 1 GHz; Tamb = 25 °C − 11 − dB Γs = Γopt; IC = −5 mA; VCE = −10 V; f = 500 MHz − 2.5 − dB Γs = Γopt; IC = −5 mA; VCE = −10 V; f = 1 GHz − 3 − dB F noise figure Note s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) May 1994 3 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB540 400 MLB541 60 P tot (mW) h FE 300 40 200 20 100 0 0 0 50 100 150 Ts 0 200 ( o C) 10 20 30 I C (mA) VCE = −10 V; Tj = 25 °C. Fig.3 DC current gain as a function of collector current, typical values. Fig.2 Power derating curve. MLB542 1 MLB543 6 C re (pF) 0.8 fT (GHz) V CE = 10 V 4 0.6 5V 0.4 2 0.2 0 0 0 4 8 12 16 20 VCB (V) 1 May 1994 I C (mA) 10 2 f = 500 MHz; Tamb = 25 °C. IC = 0; f = 1 MHz. Fig.4 10 Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 4 Transition frequency as a function of collector current, typical values. Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB544 30 gain gain (dB) (dB) 20 MLB545 30 20 MSG G UM MSG 10 0 G UM 10 0 10 20 0 30 0 10 20 I C (mA) f = 500 MHz; VCE = −10 V. MSG = maximum stable gain. Fig.6 30 I C (mA) f = 1 GHz; VCE = −10 V. MSG = maximum stable gain. Gain as a function of collector current, typical values. Fig.7 MLB546 50 Gain as a function of collector current, typical values. MLB547 50 gain gain (dB) (dB) 40 40 G UM G UM MSG 30 30 MSG 20 20 10 10 G max G max 0 0 10 102 103 f (MHz) 104 10 IC = −5 mA; VCE = −10 V. MSG = maximum stable gain. Fig.8 May 1994 102 103 f (MHz) 104 IC = −15 mA; VCE = −10 V. MSG = maximum stable gain. Gain as a function of frequency, typical values. Fig.9 5 Gain as a function of frequency, typical values. Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLB548 1.0 90 o VCE = −10 V; IC = −15 mA. Fig.10 Common emitter input reflection coefficient (s11), typical values. 90 o 135 o 180 o 45 o 40 MHz 50 40 30 20 10 0o 3 GHz 135 o 45 o 90 o MLB549 VCE = −10 V; IC = −15 mA. Fig.11 Common emitter forward transmission coefficient (s21), typical values. May 1994 6 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 135 o 45 o 3 GHz 180 o 0.5 0.4 0.3 0.2 0.1 0o 40 MHz 135 o 45 o 90 o MLB550 VCE = −10 V; IC = −15 mA. Fig.12 Common emitter reverse transmission coefficient (s12), typical values. 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLB551 1.0 90 o VCE = −10 V; IC = −15 mA. Fig.13 Common emitter output reflection coefficient (s22), typical values. May 1994 7 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W MLB552 6 MLB553 6 handbook, halfpage handbook, halfpage F (dB) F (dB) 1 GHz 4 500 MHz 4 IC = 15 mA 10 mA 5 mA 2 mA 2 2 0 1 10 I C (mA) 0 10 2 10 2 VCE = −10 V. f (MHz) 10 4 VCE = −10 V. Fig.14 Minimum noise figure as a function of collector current, typical values. May 1994 10 3 Fig.15 Minimum noise figure as a function of frequency, typical values. 8 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 F min = 2.5 dB 0.2 Γ opt 180 o 0.2 0 0.5 1 2 5 0o 0 F = 3 dB 5 0.2 F = 4 dB F = 5 dB 0.5 2 135 o 45 o 1 MLB554 1.0 90 o f = 500 MHz; VCE = −10 V; IC = −5 mA; Zo = 50 Ω. Fig.16 Common emitter noise figure circles, typical values. 90 o 1.0 1 135 o 45 o 2 0.5 0.8 0.6 F min = 3 dB 0.2 0.4 5 Γ opt 180 o 0.2 0 0.5 1 0.2 2 5 0o F = 3.5 dB 0 F = 4 dB 0.2 5 F = 5 dB 0.5 2 135 o 45 o 1 MLB555 90 o f = 1 GHz; VCE = −10 V; IC = −5 mA; Zo = 50 Ω. Fig.17 Common emitter noise figure circles, typical values. May 1994 9 1.0 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W SPICE parameters for the BFT92W crystal SEQUENCE No. PARAMETER VALUE SEQUENCE No. PARAMETER UNIT VALUE UNIT 1 IS 437.5 aA 36(1) VJS 750.0 mV 2 BF 33.58 − 37(1) MJS 0.000 − 3 NF 1.009 − 38 FC 0.768 − 4 VAF 23.39 V Note 5 IKF 99.53 mA 6 ISE 87.05 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 1.943 − 8 BR 4.947 − 9 NR 1.002 − 10 VAR 3.903 V 11 IKR 5.281 mA 12 ISC 35.88 fA 13 NC 1.393 − 14 RB 5.000 Ω 15 IRB 1.000 µA 16 RBM 5.000 Ω 17 RE 1.000 Ω 18 RC 10.00 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 746.6 fF 23 VJE 600.0 mV 24 MJE 0.357 − 25 TF 17.49 ps 26 XTF 1.354 − 27 VTF 155.6 mV 28 ITF 1.000 mA Cbe 2 fF 29 PTF 45.00 deg Ccb 100 fF 30 CJC 937.1 fF Cce 100 fF 31 VJC 396.4 mV L1 0.34 nH 32 MJC 0.200 − L2 0.10 nH 33 XCJC 0.106 − L3 0.34 nH 34 TR 8.422 ns LB 0.60 nH 35(1) CJS 0.000 F LE 0.60 nH May 1994 C cb handbook, halfpage L1 LB B L2 B' C' E' C be C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.18 Package equivalent circuit SOT323. List of components (see Fig.18) DESIGNATION 10 VALUE UNIT Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W PACKAGE OUTLINE 2.2 1.8 handbook, full pagewidth 1.35 1.15 A B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 0.40 0.30 1 1.1 max 2 0.2 M A 0.65 detail X 0.3 0.1 1.3 MBC871 Dimensions in mm. Fig.19 SOT323. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1994 11 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. 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Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD31 © Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123065/1500/01/pp12 Document order number: Date of release: May 1994 9397 731 20011