DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D121 BYD1100 Hyper fast soft-recovery rectifier Product specification Supersedes data of 1998 Dec 03 1999 Nov 16 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Smallest surface mount rectifier outline k handbook, 4 columns a • Shipped in 8 mm embossed tape. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF(AV) average forward current Ttp = 55 °C; averaged over any 20 ms period; see Figs.2 and 4 − 2.7 A Ttp = 110 °C; averaged over any 20 ms period; see Figs.2 and 4 − 1.7 A Tamb = 60 °C; printed-circuit board mounting, see Fig.12; averaged over any 20 ms period; see Figs.3 and 4 − 0.85 A Ttp = 105 °C; see Fig.6 − Tamb = 60 °C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax IFRM repetitive peak forward current IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1999 Nov 16 2 16 A − 8 A − 15 A Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage V(BR)R reverse avalanche breakdown voltage IR reverse current trr Cd dI R -------dt CONDITIONS MIN. TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.5 − − 0.735 V IF = 1 A; see Fig.5 − − 0.96 V 120 − − V IR = 0.1 mA VR = VRRMmax; see Fig.8 − − 5 µA VR = VRRMmax; Tj = 165 °C; see Fig.8 − − 150 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 − − 10 ns diode capacitance f = 1 MHz; VR = 0; see Fig.9 − 70 maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.11 − − reverse recovery time − pF 2 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.12. For more information please refer to the ‘General Part of associated Handbook’. 1999 Nov 16 3 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 GRAPHICAL DATA MGR566 MGR567 2.0 4 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.6 3 1.2 2 0.8 1 0.4 0 0 40 0 80 120 40 0 160 200 Ttp (°C) 80 120 Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Switched mode application. a = 1.42; δ = 0.5; VR = VRRMmax. Device mounted as shown in Fig.12. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBK899 2.0 handbook, halfpage a=3 P (W) 2.5 2 MGR563 20 handbook, halfpage 1.57 1.42 IF (A) 1.6 16 1.2 12 0.8 8 0.4 4 0 0.4 0 0.8 1.2 0 1.6 2.0 IF(AV) (A) 0 1 2 3 VF (V) 4 a = IF(RMS)/IF(AV); δ = 0.5; VR = VRRMmax. Fig.4 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1999 Nov 16 Fig.5 4 Maximum forward voltage as a function of forward current. Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 MGR571 20 handbook, full pagewidth IFRM (A) 16 δ = 0.05 12 0.1 8 0.2 0.5 4 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Ttp = 105 °C; Rth j-tp = 30 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGR570 10 handbook, full pagewidth IFRM (A) 8 δ = 0.05 6 0.1 4 2 0.2 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Tamb = 60 °C; Rth j-a = 150 K/W; VR = VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 100 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 16 5 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 MGC550 103 handbook, halfpage IR (µA) Cd (pF) 102 102 10 10 1 1 0 100 Tj (°C) 200 1 10 102 VR (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.8 MBK900 103 handbook, halfpage Reverse current as a function of junction temperature; maximum values. Fig.9 IF (A) handbook, full pagewidth DUT 0.5 t rr 0 50 Ω 0.5 A Diode capacitance as a function of reverse voltage; typical values. t 0.25 0.5 IR (A) 1.0 Rise time oscilloscope: tr ≤ 2 ns. Turn-on time switch: t ≤ 3 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1999 Nov 16 6 MAM282 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 50 IF halfpage handbook, dI F dt t rr 4.5 10% t 50 dI R dt 2.5 100% IR MGC499 1.25 MSB213 Dimensions in mm. Fig.11 Reverse recovery definitions. 1999 Nov 16 Fig.12 Device mounted on a printed-circuit board. 7 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D 2.1 2.0 mm D1 L H 2.0 1.8 3.7 3.3 D 0 1 2 mm scale 0.3 Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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