PHILIPS BGM1012

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGM1012
MMIC wideband amplifier
Product specification
Supersedes data of 2002 May 16
2002 Sep 06
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
PINNING
FEATURES
• Internally matched to 50 Ω
PIN
• Very wide frequency range (4 Ghz at 3 dB bandwidth)
DESCRIPTION
1
• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)
VS
2, 5
GND2
• 10 dBm saturated output power at 1 GHz
3
RF out
• High linearity (18 dBm IP3(out) at 1 GHz)
4
GND1
6
RF in
• Low current (14.6 mA)
• Unconditionally stable.
APPLICATIONS
6
5
4
1
• LNB IF amplifiers
• Cable systems
6
3
• ISM
• General purpose.
1
2
Top view
DESCRIPTION
4
3
2, 5
MAM455
Marking code: C2-.
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
3
4
V
IS
DC supply current
14.6
−
mA
s212
insertion power gain
20.1
−
dB
NF
noise figure
f = 1 GHz
4.8
−
dB
PL(sat)
saturated load power
f = 1 GHz
9.7
−
dBm
f = 1 GHz
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 06
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VS
DC supply voltage
IS
supply current
CONDITIONS
RF input AC coupled
Ts ≤ 90 °C
MIN.
MAX.
UNIT
−
4
V
−
50
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
PD
maximum drive power
−
10
dBm
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2002 Sep 06
PARAMETER
thermal resistance from junction to
solder point
CONDITIONS
Ptot = 200 mW; Ts ≤ 90 °C
3
VALUE
UNIT
300
K/W
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
CHARACTERISTICS
VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
IS
supply current
s212
insertion power gain
RL IN
RL OUT
s122
NF
return losses input
return losses output
isolation
noise figure
CONDITIONS
MIN.
TYP.
MAX.
UNIT
11
14.6
19
mA
f = 100 MHz
19
19.5
20
dB
f = 1 GHz
19
20.1
21
dB
f = 1.8 GHz
19
20.4
21
dB
f = 2.2 GHz
19
20.4
22
dB
f = 2.6 GHz
18
19.9
21
dB
f = 3 GHz
16
18.7
20
dB
f = 1 GHz
9
11
−
dB
f = 2.2 GHz
13
15
−
dB
f = 1 GHz
11
14
−
dB
f = 2.2 GHz
10
13
−
dB
f = 1 GHz
30
33
−
dB
f = 2.2 GHz
35
38
−
dB
f = 1 GHz
−
4.8
5.1
dB
f = 2.2 GHz
−
4.9
5.3
dB
3.6
−
GHz
s212
−3 dB below flat gain at 1 GHz 3.1
BW
bandwidth
at
K
stability factor
f = 1 GHz
1.5
2.1
−
−
f = 2.2 GHz
3
3.4
−
−
PL(sat)
saturated load power
f = 1 GHz
8
9.7
−
dBm
f = 2.2 GHz
3.5
5.6
−
dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz
4
6.0
−
dBm
at 1 dB gain compression; f = 2.2 GHz
1.5
3.4
−
dBm
IP3(in)
IP3(out)
2002 Sep 06
input intercept point
output intercept point
f = 1 GHz
−4
−2
−
dBm
f = 2.2 GHz
−9
−7
−
dBm
f = 1 GHz
16
18
−
dBm
f = 2.2 GHz
11
13
−
dBm
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
APPLICATION INFORMATION
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 Ω, and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be
increased.
DC-block
handbook, halfpage
DC-block
100 pF
100 pF
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
DC-block
100 pF
input
output
MGU437
Fig.3 Easy cascading application circuit.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
mixer
handbook, halfpage
from RF
circuit
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
to IF circuit
or demodulator
wideband
amplifier
MGU438
oscillator
Fig.4 Application as IF amplifier.
Vshalfpage
handbook,
C1
L1
Vs
RF in
RF input
RF out
C2
RF output
GND1
GND2
mixer
handbook, halfpage
C3
to IF circuit
or demodulator
antenna
MGU436
LNA
wideband
amplifier
MGU439
oscillator
Fig.2 Typical application circuit.
Fig.5 Application as RF amplifier.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
from modulation
or IF circuit
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
to power
amplifier
wideband
amplifier
MGU440
oscillator
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
2002 Sep 06
mixer
handbook, halfpage
Fig.6 Application as driver amplifier.
5
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.2
0
0.2
100 MHz
2
4 GHz
180°
0.4
+5
0.5
5
0°
0
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD910
1.0
−90°
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.7 Input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
100 MHz
180°
0.2
0
0.5
1
0.2
2
5
0°
0
4 GHz
−5
−0.2
−0.5
−2
−135°
−45°
−1
MLD911
−90°
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.8 Output reflection coefficient (s22); typical values.
2002 Sep 06
6
1.0
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
MLD912
0
MLD913
25
handbook, halfpage
s 2
handbook, halfpage
12
(dB)
−10
s21 2
(dB)
20
(1)
−20
(2)
(3)
−30
15
−40
−50
10
0
1000
2000
3000
4000
0
1000
2000
3000
f (MHz)
Isolation (s122) as a function of frequency;
typical values.
Fig.10 Insertion gain (s212) as a function of
frequency; typical values.
MLD914
20
MLD915
20
handbook, halfpage
handbook, halfpage
PL
(dBm)
PL
(dBm)
10
4000
PD = −30 dBm; ZO = 50 Ω.
(1) IS = 18.7 mA; VS = 3.3 V.
(2) IS = 14.6 mA; VS = 3 V.
(3) IS = 10.6 mA; VS = 2.7 V.
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.9
f (MHz)
10
(1)
(1)
(2)
(3)
(3)
0
0
−10
−10
−20
−40
−30
−20
−10
PD (dBm)
−20
−40
0
−30
−20
−10
(2)
PD (dBm)
0
f = 1 GHz; ZO = 50 Ω.
(1) VS = 3.3 V.
(2) VS = 3 V.
(3) VS = 2.7 V.
f = 2.2 GHz; ZO = 50 Ω.
(1) VS = 3.3 V.
(2) VS = 3 V.
(3) VS = 2.7 V.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Sep 06
7
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
MLD916
5.5
MLD917
12
handbook, halfpage
handbook, halfpage
NF
(dB)
K
5.3
8
5.1
4.9
(1)
(3)
4
(2)
4.7
0
4.5
0
1000
2000
f (MHz)
3000
0
ZO = 50 Ω.
(1) IS = 10.6 mA; VS = 2.7 V.
(2) IS = 14.6 mA; VS = 3 V.
(3) IS = 18.7 mA; VS = 3.3 V.
2000
3000
4000
f (MHz)
IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω.
Fig.13 Noise figure as a function of frequency;
typical values.
2002 Sep 06
1000
Fig.14 Stability factor as a function of frequency;
typical values.
8
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s12
s22
KFACTOR
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.25122
14.607
9.33681
12.018
0.032124
16.445
0.26458
64.156
200
0.27070
2.759
9.42458
5.676
0.028303
6.37
0.20645
64.153
1.8
400
0.27979
−7.969
9.63627
−8.447
0.026297
−4.545
0.1543
52.558
1.9
600
0.28323
−14.78
9.76543
−19.02
0.024833
−10.24
0.15203
39.347
1.9
1.6
9
800
0.28557
−20.13
9.93782
−27.93
0.023234
−14.62
0.16867
27.926
2.0
1000
0.28673
−24.14
10.03633
−36.88
0.021523
−17.42
0.19196
19.293
2.1
1200
0.28517
−27.57
10.11638
−46.47
0.019830
−19.83
0.21421
12.703
2.2
1400
0.27902
−29.93
10.26450
−56.05
0.018230
−21.14
0.23292
7.154
2.4
1600
0.26682
−31.81
10.40572
−65.76
0.016902
−21.62
0.24605
2.582
2.5
1800
0.24746
−33.12
10.44088
−76.97
0.015759
−22.32
0.25113
−1.26
2.7
2000
0.21894
−33.8
10.46224
−88.33
0.014310
−22.64
0.24367
−4.817
3.0
2200
0.18164
−32.67
10.45202
−100.3
0.013012
−23.13
0.22184
−7.573
3.4
2400
0.14000
−26.75
10.34342
−112.6
0.011826
−23.27
0.18787
−8.489
3.9
2600
0.10418
−10.16
9.87989
−122.9
0.010171
−23.23
0.13049
−4.601
4.9
2800
0.09469
15.051
9.20393
−129.5
0.008664
−16.9
0.1294
9.578
6.2
3000
0.10595
33.415
8.68177
−135.4
0.007541
−9.957
0.1127
18.402
7.5
3200
0.11609
42.888
8.18809
−142.2
0.006655
−0.835
0.092234
23.406
9.0
3400
0.10827
50.017
7.93039
−151.5
0.006042
12.444
0.059268
26.453
10.3
3600
0.09866
60.967
7.77538
−162.2
0.006205
29.297
0.015829
38.211
10.3
3800
0.08693
80.355
7.33775
−172.6
0.007039
40.351
0.028159
−152.8
9.6
4000
0.10090
102.07
6.90878
177.1
0.008241
46.053
0.075298
−133.1
8.7
Philips Semiconductors
s21
s11
f (MHz)
MMIC wideband amplifier
2002 Sep 06
Scattering parameters
VS = 3 V; IS = 14.6 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C.
Product specification
BGM1012
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Sep 06
REFERENCES
IEC
JEDEC
EIAJ
SC-88
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGM1012
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 06
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
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without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
613516/03/pp12
Date of release: 2002
Sep 06
Document order number:
9397 750 10021