Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V PINNING - SOT429 PIN MAX. UNIT 4.5 0.7 1500 700 8 15 125 1.0 - V V A A W V A µs Tmb ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 700 8 15 4 6 125 150 150 V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air July 1998 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER ICES ICES Collector cut-off current 1 IEBO VCEOsus VCEsat VBEsat hFE CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 6.0 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A DC current gain IC = 100 mA; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 700 - 10 - mA V 6 13 1.0 1.1 30 V V - TYP. MAX. UNIT 7 - MHz 125 - pF 6.5 0.7 - µs µs DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS fT Transition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V CC Collector capacitance at f = 1MHz VCB = 10 V ts tf Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V; IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor h FE ICsat TRANSISTOR IC BU508AW 100 BU508AD DIODE t IBend IB 10 t 20us 26us 64us VCE 1 0.1 t Fig.3. Switching times waveforms. 1 IC/A 10 Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE ICsat BU508AD VCESAT / V 1 90 % 0.9 0.8 IC 0.7 0.6 10 % tf 0.5 t ts 0.4 IBend 0.3 IB 0.2 t 0.1 0 - IBM Fig.4. Switching times definitions. 0.1 1 10 IC / A Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB + 150 v nominal adjust for ICsat 1.4 BU508AD VBESAT / V 1.2 1mH IC = 6A 1 IC = 4.5A IBend LB D.U.T. 12nF IC = 3A BY228 0.8 -VBB 0.6 Fig.5. Switching times test circuit. July 1998 0 1 2 3 IB / A 4 Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW BU508AD VCESAT/V 120 10 Normalised Power Derating PD% with heatsink compound 110 100 90 80 70 60 1 50 IC = 6A 40 30 20 IC = 4.5A 10 0 IC = 3A 0.1 0.1 1 0 10 IB/A 40 60 80 Ths / C 100 120 140 Fig.11. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC 10 20 bu508aw Zth K/W 1 0.5 0.1 0.2 0.1 0.05 0.02 P D 0.01 0 t D= p T tp T 0.001 1.0E-07 1.0E-5 1.0E-3 1.0E-1 t 1.0E+1 t/s Fig.10. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.12. Forward bias safe operating area. Tmb < 25˚C (1) Ptot max line. (2) Second-breakdown limit (independent of temperature). I Region of permissible DC operation. II Permissible extension for repetitive operation. July 1998 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.13. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.200