Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1025B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 20 V/ 25 V k tab a 3 IF(AV) = 10 A VF ≤ 0.4 V PINNING Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025B series is supplied in the SOT404 surface mounting package. PIN SOT404 DESCRIPTION 1 no connection 2 cathode1 3 anode tab 2 tab cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYL10 VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature MAX. UNIT - 20B 20 25B 25 V - 20 25 V Tmb ≤ 119 ˚C - 20 25 V square wave; δ = 0.5; Tmb ≤ 132 ˚C - 10 A square wave; δ = 0.5; Tmb ≤ 132 ˚C - 20 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 130 150 A A - 1 A - 150 ˚C - 65 175 ˚C 1 it is not possible to make connection to pin 2 of the SOT428 package October 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL1025B series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted, minimum footprint, FR4 board TYP. MAX. UNIT - - 3 K/W - 50 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Cd Junction capacitance October 1998 CONDITIONS MIN. IF = 10 A; Tj = 150˚C IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C 2 - TYP. MAX. UNIT 0.33 0.39 0.54 0.57 0.2 15 580 0.4 0.45 0.61 0.64 5 30 - V V V V mA mA pF Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL1025B series PBYL1025 Forward dissipation, PF (W) 10 Tmb(max) / C Vo = 0.29 V Rs = 0.016 Ohms 120 100mA 126 10mA PBYR725D Reverse current, IR (A) 125 C 8 D = 1.0 100 C 0.5 6 132 1mA 138 100uA 75 C 0.2 0.1 50 C 4 tp I D= tp T Tj = 25 C 144 10uA 150 15 1uA 2 0 t T 0 5 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 8 7 Tmb(max) / C PBYL1025 Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 Ohms a = 1.57 6 5 2.8 4 2.2 0 5 10 15 Reverse voltage, VR (V) 20 25 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 10000 126 PBYR725D Junction capacitance, Cd (pF) 132 1.9 1000 138 4 3 144 2 1 0 0 2 150 10 4 6 8 Average forward current, IF(AV) (A) 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 15 Forward current, IF (A) 1 10 Reverse voltage, VR (V) 100 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR725D 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 1 typ 10 max 0.1 5 PD 0.01 0 0 0.2 0.4 0.6 Forward voltage, VR (V) 0.8 0.001 1us 1 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.6. Transient thermal impedance; Zth j-mb = f(tp). 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL1025B series MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.7. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.8. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYL1025B series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 5 Rev 1.100