PHILIPS BUK9214-30A

BUK9214-30A
TrenchMOS™ logic level FET
Rev. 01 — 20 March 2002
M3D300
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK9214-30A in SOT428 (D-PAK).
2. Features
■
■
■
■
TrenchMOS™ technology
Q101 compliant
175 °C rated
Logic level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V loads
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pinning - SOT428, simplified outline and symbol
Pin
Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base;
connected to
drain (d)
Simplified outline
Symbol
d
mb
g
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics.
s
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
-
30
V
VDS
drain-source voltage (DC)
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V
-
63
A
Ptot
total power dissipation
Tmb = 25 °C
-
107
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj = 25 °C; VGS = 5 V; ID = 25 A
11
14
Tj = 25 °C; VGS = 4.5 V; ID = 25 A
-
15.5
Tj = 25 °C; VGS = 10 V; ID = 25 A
9
12
mΩ
mΩ
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
Min
Max
Unit
-
30
V
-
30
V
-
±15
V
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
-
63
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
45
A
RGS = 20 kΩ
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
253
A
Tmb = 25 °C; Figure 1
Ptot
total power dissipation
-
107
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 25 °C
-
63
A
IDRM
pulsed reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
253
A
unclamped inductive load; ID = 63 A;
VDS ≤ 30 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
-
230
mJ
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
2 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
03aa16
120
03nh79
80
Pder
ID
(A)
(%)
60
80
40
40
20
0
0
0
50
100
150
200
o
Tmb ( C)
25
50
75
100
125
150
175
200
Tmb (ºC)
VGS ≥ 4.5 V
P tot
P der = ---------------------- × 100%
P
°
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
03nh78
ID
(A)
tp = 10 µs
RDSon = VDS / ID
102
100 µs
1 ms
DC
10
10 ms
100 ms
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
3 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Value
Unit
thermal resistance from junction to mounting Figure 4
base
1.4
K/W
thermal resistance from junction to ambient
71.4
K/W
7.1 Transient thermal impedance
03nh80
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
δ=
P
Single Shot
tp
T
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
4 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
30
-
-
V
Tj = −55 °C
27
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
-
V
Tj = −55 °C
-
-
2.3
V
Tj = 25 °C
-
0.05
10
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
Tj = 25 °C
-
11
14
mΩ
Tj = 175 °C
-
-
26.6
mΩ
VGS = 4.5 V; ID = 25 A;
-
-
15.5
mΩ
VGS = 10 V; ID = 25 A;
-
9
12
mΩ
VGS = 5 V; VDD = 24 V;
ID = 25 A; Figure 14
-
31
-
nC
-
5.3
-
nC
-
12.2
-
nC
-
1730
2317
pF
-
400
481
pF
-
260
365
pF
-
10
-
ns
VDS = 30 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-to-source charge
Qgd
gate-to-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
-
85
-
ns
td(off)
turn-off delay time
-
94
-
ns
tf
fall time
-
108
-
ns
Ld
internal drain inductance
from drain to centre of die
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω;
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
5 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
0.85
1.2
V
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 20 A; VGS = 0 V;
Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
03nf71
300
ID
(A)
250
9
10
-
83
-
ns
-
119
-
nC
03nf70
18
RDSon
7
(mΩ)
8
16
VGS (V) = 6
200
14
150
5
100
4
50
3
12
10
2.2
0
0
2
4
6
8
8
3
10
VDS (V)
Tj = 25 °C; tp = 300 µs
3.4
9
11
13
15
VGS (V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03aa27
03nf72
3
7
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
30
RDSon
(mΩ)
5
3.8 4
2
a
VGS (V) = 5
25
1.6
20
1.2
15
0.8
10
0.4
5
0
0
0
50
100
150
-60
200
ID (A)
Tj = 25 °C
60
120
o
Tj ( C)
180
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
0
Rev. 01 — 20 March 2002
6 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
03aa33
2.5
max
(V)
03aa36
10-1
ID
(A)
10-2
VGS(th)
2
typ
min
10-3
1.5
typ
max
min
1
10-4
0.5
10-5
10-6
0
-60
0
60
120
Tj (°C)
180
0
1
2
3
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nf68
50
gfs
(S)
03nf73
3500
C
(pF)
3000
40
2500
Ciss
30
2000
Coss
1500
20
1000
Crss
10
500
0
0
0
10
20
30
40
50
10-2
60
70
ID (A)
Tj = 25 °C; VDS = 25 V
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
10-1
Rev. 01 — 20 March 2002
7 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
03nf69
80
03nf67
5
VGS
(V)
ID
(A)
4
60
VDD = 14 V
VDD = 24 V
3
40
2
20
1
Tj = 175 ºC
Tj = 25 ºC
0
0
0
1
2
3
4
5
0
10
20
VGS (V)
30
QG (nC)
40
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nf66
100
IS
(A)
80
60
40
20
Tj = 25 ºC
Tj = 175 ºC
0
0.0
0.5
1.0
1.5
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
8 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
E1
mounting
base
D1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1(1)
A2
b
b1
b2
c
D
D1
min.
E
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.0
6.73
6.47
E1
e
e1
4.81 2.285 4.57
4.45
HE
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
01-12-11
Fig 16. SOT428 (D-PAK).
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
9 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
10. Revision history
Table 6:
Revision history
Rev Date
01
20020320
CPCN
Description
-
Product specification, initial version.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Product data
Rev. 01 — 20 March 2002
10 of 12
BUK9214-30A
Philips Semiconductors
TrenchMOS™ logic level FET
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09373
Rev. 01 — 20 March 2002
11 of 12
Philips Semiconductors
BUK9214-30A
TrenchMOS™ logic level FET
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 20 March 2002
Document order number: 9397 750 09373