DISCRETE SEMICONDUCTORS DATA SHEET BFQ135 NPN 6.5 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Nov 07 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 FEATURES DESCRIPTION • Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. fpage 4 3 1 PINNING 2 APPLICATIONS • MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. PIN 1 Top view collector 2, 4 3 DESCRIPTION emitter MSA457 Fig.1 SOT172A2. base QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT 19 V open base − − − 150 mA total power dissipation Tc ≤ 145 °C − − 2.7 W hFE DC current gain IC = 120 mA; VCE = 18 V; Tamb = 25 °C 55 − − fT transition frequency IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C − 6.5 − GHz GUM maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f = 500 MHz; Tamb = 25 °C − 17 − dB IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C − 13.5 − dB dim = −60 dB; IC = 120 mA; VCE = 18 V; RL = 75 Ω; fp + fq − fr = 793.25 MHz; Tamb = 25 °C − 1.2 − V VCEO collector-emitter voltage IC collector current (DC) Ptot VO output voltage − MAX. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Nov 07 2 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 19 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 150 mA Ptot total power dissipation Tc ≤ 145 °C − 2.7 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER thermal resistance from junction to case 1997 Nov 07 3 VALUE UNIT 20 K/W Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 18 V − − 50 hFE DC current gain IC = 120 mA; VCE = 18 V; Tamb = 25 °C 55 − − Cc collector capacitance IE = ie = 0; VCB = 18 V; f = 1 MHz − 1.8 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 5.5 − pF Cre feedback capacitance IC = 0; VCE = 18 V; f = 1 MHz − 1 1.2 pF fT transition frequency IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 °C − 6.5 − GHz GUM maximum unilateral power gain (note 1) IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 °C − 17 − dB IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 °C − 13.5 − dB note 2 − 1.35 − V note 3 − 1.2 − V note 4 − −70 − dB note 5 − −70 − dB VO d2 output voltage second order intermodulation distortion Notes 2 µA S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB˙ . 2 2 1 – S 11 1 – S 22 2. dim = −60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at dim = −60 dB; fp = 445.25 MHz; Vq = VO −6 dB; fq = 453.25 MHz; Vr = VO −6 dB; fr = 455.25 MHz; measured at fp + fq − fr = 443.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz. 4. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C; fp = 50 MHz; fq = 400 MHz; measured at fp + fq = 450 MHz. 5. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz. 1997 Nov 07 4 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 , handbook, full pagewidth L2 10 nF 10 nF VCC 4.7 µF L4 VBB 10 nF 240 Ω 10 kΩ 10 nF input 75 Ω L6 L3 L5 L1 output 75 Ω 10 nF DUT 1 pF 33 Ω 1 pF 33 Ω MEA260 L1 = 8 nH. L2 = 15 nH (2 turns copper wire, internal diameter 2 mm). L3 = 10 nH (2 turns copper wire, internal diameter 1.5 mm). L5: Lp = 21 mm; Rc = 75 Ω. L6: Lp = 16 mm; Rc = 75 Ω. Fig.2 Intermodulation distortion test circuit. MBB294 MBB296 8 160 handbook, halfpage handbook, halfpage fT (GHz) h FE 6 120 4 80 2 40 0 0 40 80 120 160 I C (mA) 0 40 80 160 I C (mA) VCE = 18 V; Tamb = 25 °C. VCE = 18 V; f = 1 GHz; Tamb = 25 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1997 Nov 07 120 5 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 MEA954 MEA956 –40 –30 d im (dB) –40 d2 (dB) –50 –60 –60 –70 –80 –80 150 50 I C (mA) 0 250 100 VCE = 18 V. VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C; measured at fp + fq = 450 MHz. Fig.5 Fig.6 Intermodulation distortion as a function of collector current; typical values. MEA955 –40 d2 (dB) –60 –80 100 0 I C (mA) 200 VCE = 18 V; VO = 50 dBmV; Tamb = 25 °C; measured at fp + fq = 810 MHz. Fig.7 Second order intermodulation distortion as a function of collector current; typical values. 1997 Nov 07 6 I C (mA) 200 Second order intermodulation distortion as a function of collector current; typical values. Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT172A2 D A Q c A D1 N2 N M W w1 M A D2 N3 M1 X H detail X b 4 b1 H 1 3 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 D2 H M M1 N N2 N3 Q mm 5.51 4.45 1.66 1.39 0.89 0.63 0.16 0.10 5.20 4.95 5.33 5.08 5.33 5.08 23.37 22.35 3.05 2.79 1.66 1.39 11.56 11.04 8.38 7.62 3.69 2.92 2.95 2.43 0.217 0.175 0.065 0.055 0.035 0.025 0.006 0.004 0.205 0.210 0.210 0.195 0.200 0.200 0.92 0.88 0.12 0.11 0.065 0.465 0.055 0.435 0.33 0.30 0.145 0.115 0.116 0.096 inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ w1 0.38 8-32 UNC EUROPEAN PROJECTION 0.015 ISSUE DATE 97-06-28 SOT172A2 1997 Nov 07 W 7 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Nov 07 8 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES 1997 Nov 07 9 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES 1997 Nov 07 10 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 NOTES 1997 Nov 07 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Nov 07 Document order number: 9397 750 02763