INTEGRATED CIRCUITS DATA SHEET TZA3033 SDH/SONET STM1/OC3 transimpedance amplifier Objective specification File under Integrated Circuits, IC19 1998 Jul 08 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 FEATURES APPLICATIONS • Low equivalent input noise, typically 1 pA/√Hz • Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high speed data networks • Wide dynamic range, typically 0.25 µA to 1.6 mA • Differential transimpedance of 117 kΩ • Wideband RF gain block. • Bandwidth minimum 150 MHz • Differential outputs GENERAL DESCRIPTION • On-chip AGC (Automatic Gain Control) The TZA3033 is a low-noise transimpedance amplifier with AGC designed to be used in STM1/OC3 fibre optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. • No external components required • Single supply voltage from 3.0 to 5.5 V • Bias voltage for PIN diode • Pin compatible with SA5223. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION TZA3033T SO8 TZA3033U naked die VERSION plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 die in waffle pack carriers; die dimensions 0.960 × 1.210 mm BLOCK DIAGRAM AGC(1) handbook, full pagewidth (15) VCC 1 nF 2 kΩ DREF 1 (1) 8 (13, 14) GAIN CONTROL peak detector 65 pF IPhoto VCC 3 (5) A1 A2 low noise amplifier (12) 7 OUTQ (11) 6 OUT single-ended to differential converter TZA3033 BIASING 3 2, 4, 5 (3, 4, 7, 8, 9, 10) MGR368 GND (1) AGC analog I/O is only available on the TZA3033U (pad 15). The numbers in brackets refer to the pad numbers of the naked die version. Fig.1 Block diagram. 1998 Jul 08 2 − Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 PINNING SYMBOL PIN TYPE DESCRIPTION DREF 1 analog output bias voltage for PIN diode (VCC); cathode should be connected to this pin GND 2 ground ground IPhoto 3 analog input current input; anode of PIN diode should be connected to this pin; DC bias voltage is 1048 mV GND 4 ground ground GND 5 ground ground OUT 6 data output data output; OUT goes HIGH when current flows into IPhoto (pin 3) OUTQ 7 data output compliment of OUT (pin 6) VCC 8 supply supply voltage handbook, halfpage 8 VCC DREF 1 GND 2 7 OUTQ TZA3033T IPhoto 3 6 OUT GND 4 5 GND MGR369 Fig.2 Pin configuration. 1998 Jul 08 3 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 PAD CONFIGURATION Bonding pad locations handbook, full pagewidth 1 8 DREF AGC GND VCC 2 7 OUTQ 6 OUT 14 13 15 1 TESTA 2 3 TZA3033U 4 12 11 5 TESTB IPhoto 6 7 9 10 8 3 GND GND 4 5 MGR371 Pad 15 (AGC) is not bonded. Fig.3 Bonding diagram TZA3033U. 1998 Jul 08 4 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier Pad centre locations FUNCTIONAL DESCRIPTION The TZA3033 is a transimpedance amplifier intended for use in fibre optic links for signal recovery in STM1/OC3 applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and transforms it into a differential output voltage. The most important characteristics of the TZA3033 are high receiver sensitivity and wide dynamic range. COORDINATES(1) SYMBOL TZA3033 PAD x y DREF 1 95 881 TESTA 2 95 735 GND 3 95 618 GND 4 95 473 IPhoto 5 95 285 TESTB 6 95 147 GND 7 215 95 GND 8 360 95 GND 9 549 95 GND 10 691 95 OUT 11 785 501 OUTQ 12 785 641 VCC 13 567 1055 VCC 14 424 1055 AGC 15 259 1055 High receiver sensitivity is achieved by minimizing noise in the transimpedance amplifier. The signal current generated by a PIN diode can vary between 0.25 µA to 1.6 mA (peak-to-peak value). An AGC loop (see Fig.1) is implemented to make it possible to handle such a wide dynamic range. The AGC loop increases the dynamic range of the receiver by reducing the feedback resistance of the preamplifier. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not needed for AGC. The AGC voltage can be monitored at pad 15 on the naked die (TZA3033U). Pad 15 is not bonded in the packaged device (TZA3033T). This pad can be left unconnected during normal operation. It can also be used to force an external AGC voltage. If pad 15 (AGC) is connected to VCC, the internal AGC loop is disabled and the receiver gain is at a maximum. The maximum input current is then about 10 µA. Note 1. All coordinates (µm) are measured with respect to the bottom left-hand corner of the die. A differential amplifier converts the output of the preamplifier to a differential voltage. The data output circuit is given in Fig.4. The logic level symbol definitions are shown in Fig.5. 1998 Jul 08 5 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier handbook, full pagewidth TZA3033 VCC 800 Ω 800 Ω 30 Ω OUTQ 30 Ω OUT 4.5 mA 4.5 mA 2 mA MGR290 Fig.4 Data output circuit. VCC handbook, full pagewidth VO(max) VOQH VOH Vo(p-p) VOQL VOL VOO VO(min) MGR243 Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ. 1998 Jul 08 6 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCC supply voltage Vn DC voltage MIN. pin 3/pad 5: IPhoto In MAX. UNIT −0.5 +5.5 V −0.5 +2 V pins 6 and 7/pads 11 and 12: OUT and OUTQ −0.5 VCC + 0.5 V pad 15: AGC (TZA3033U only) −0.5 VCC + 0.5 V pin 1/pad 1: DREF −0.5 VCC + 0.5 V pin 3/pad 5: IPhoto −1 +2.5 mA pins 6 and 7/pads 11 and 12: OUT and OUTQ −15 +15 mA pad 15: AGC (TZA3033U only) −0.2 +0.2 mA pin 1/pad 1: DREF DC current −2.5 +2.5 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −40 +85 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth(j-s) thermal resistance from junction to solder point tbf K/W Rth(j-a) thermal resistance from junction to ambient tbf K/W CHARACTERISTICS For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient temperature range and process spread. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC supply voltage 3 5 5.5 V ICC supply current AC coupled; RL = 50 Ω − 37 − mA Ptot total power dissipation VCC = 5 V − 185 − mW VCC = 3.3 V − 116 − mW Tj junction temperature −40 − +120 °C Tamb ambient temperature −40 +25 +85 °C Rtr small-signal transresistance of the receiver RL = ∞ − 234 − kΩ RL = 50 Ω − 117 − kΩ 120 150 − MHz f−3dB(h) 1998 Jul 08 high frequency −3 dB point measured differentially; AC coupled Ci = 0.7 pF 7 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier SYMBOL In(tot) PARAMETER total integrated RMS noise current over bandwidth ∆Rtr/∆t AGC loop constant PSRR power supply rejection ratio CONDITIONS TZA3033 MIN. TYP. MAX. UNIT referred to input; note 1 ∆f = 90 MHz − 16 − nA ∆f = 120 MHz − tbf − nA ∆f = 150MHz − tbf − nA − 1 − dB/ms f = 100 kHz to 10 MHz − 0.5 − µA/V f = 100 MHz − 10 − µA/V VCC = 5 V −500 +1 +1800 µA VCC = 3.3 V −500 +1 +1600 µA − 1048 − mV measured differentially; note 2 Input: IPhoto Ii(IPhoto)(p-p) Vbias(IPhoto) input current on pin IPhoto (peak-to-peak value) input bias voltage on pin IPhoto Data outputs: OUT and OUTQ VO(CM) common mode output voltage AC coupled; RL = 50 Ω VCC − 1.800 VCC − 1.700 VCC − 1.600 V Vo(se)(p-p) single-ended output voltage (peak-to-peak value) AC coupled; RL = 50 Ω − 150 260 mV VOO differential output offset voltage −100 − +100 mV Ro output resistance single-ended; DC tested 42 50 58 Ω tr rise time 20% to 80% − tbf − ps tf fall time 80% to 20% − tbf − ps Notes 1. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. 2. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage: ∆I IPhoto PSRR = ------------------∆V CC For example, a disturbance of +4 mV disturbance on VCC at 10 MHz will typically add an extra 2 nA to the photodiode current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with an external capacitor of 1 nF. 1998 Jul 08 8 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 APPLICATION INFORMATION 10 µH handbook, full pagewidth VP 22 nF 680 nF VCC 8 DREF 1 7 TZA3033T IPhoto 6 OUTQ 3 4 GND 5 GND 100 nF Zo = 50 Ω 100 nF OUT 1 nF 2 Zo = 50 Ω R3 50 Ω R4 50 Ω GND MGR370 Fig.6 Application diagram. 1998 Jul 08 9 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03S MS-012AA 1998 Jul 08 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 10 o 8 0o Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 SOLDERING Wave soldering Introduction Wave soldering techniques can be used for all SO packages if the following conditions are observed: There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. 1998 Jul 08 11 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 08 12 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier NOTES 1998 Jul 08 13 TZA3033 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier NOTES 1998 Jul 08 14 TZA3033 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier NOTES 1998 Jul 08 15 TZA3033 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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