MMAD1108(e3) Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either tin-lead plating terminations or as RoHS compliant with annealed matte-tin finish. 16-Pin Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • 8-diode array protects 8 lines Molded 16-Pin SOIC package • UL 94V-0 flammability classification • Low capacitance 1.5 pF per diode • Switching speeds less than 5 ns • IEC 61000-4 compatible: Top Viewing Pin Layout 61000-4-2 (ESD): Air 15 kV, contact – 8 kV 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A, 8/20 µs • RoHS compliant device is available APPLICATIONS / BENEFITS • • MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 Low capacitance steering diode protection for high frequency data lines Ideal for: RS-232 & RS-422 Interface Networks. Ethernet: 10 Base T Computer I / O Ports LAN Switching Core Drivers MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01065, Rev A (12/11/13) ©2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 [email protected] Page 1 of 3 MMAD1108(e3) MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Peak Working Reverse Voltage Repetitive Peak Forward Current (one diode) Forward Surge Current @ 8.3 ms @ 8/20 µs Rated Average Power Dissipation (total package) Solder Temperature @ 10 s Symbol Value Unit TJ and TSTG V RWM I FRM I FSM -55 to +150 75 400 2 12 ºC/W V mA A P M(AV) 1500 260 mW ºC MECHANICAL and PACKAGING • • • • • • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750 method 2026. MARKING: MSC logo, MMAD1108 or MMAD1108e3 and date code. Pin #1 is to the left of the dot or indent on top of package. DELIVERY option: Tape and reel or carrier tube. Consult factory for quantities. WEIGHT: Approximately 0.127 grams See Package Dimensions on last page. PART NOMENCLATURE MMAD 1108 (e3) Surface Mount Package RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series Number SYMBOLS & DEFINITIONS Definition Symbol CT IR Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. V (BR) VF Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. V RWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated PART NUMBER MMAD1108 MMAD1108e3 BREAKDOWN VOLTAGE V (BR) @ I (BR) =100 µA LEAKAGE CURRENT IR T A = 25 °C LEAKAGE CURRENT IR T A = 150 °C TOTAL CAPACITANCE CT @0V REVERSE RECOVERY TIME t rr FORWARD VOLTAGE VF I F = 10 mA FORWARD VOLTAGE VF I F = 100 mA V µA µA pF ns V V MIN MAX @V R MAX @V R TYP MAX MAX MAX 90 0.200 20 300 20 1.5 5.0 1.00 1.20 RF01065, Rev A (12/11/13) ©2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 [email protected] Page 2 of 3 MMAD1108(e3) PACKAGE DIMENSIONS Dimensions Inch Millimeters Min Max Min Max 0.358 0.398 9.09 10.10 0.150 0.158 3.81 4.01 0.053 0.069 1.35 1.75 0.011 0.021 0.28 0.53 0.016 0.050 0.41 1.27 0.050 BSC 1.27 BSC 0.006 0.010 0.15 0.25 0.004 0.008 0.10 0.20 0.189 0.206 4.80 5.23 0.228 0.244 5.79 6.19 Ref. A B C D F G J K L P PAD LAYOUT Ref. Inch Typical 0.275 0.155 0.060 0.024 0.050 A B C D E Dimensions Millimeters Typical 7.0 4.0 1.52 0.6 1.270 SCHEMATIC AND CIRCUIT Figure 1 RF01065, Rev A (12/11/13) ©2013 Microsemi Corporation One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 [email protected] Page 3 of 3