APTM08TAM04PG Triple phase leg MOSFET Power Module VBUS3 G1 G3 G5 S3 S1 U G2 S2 0/VBUS1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control S5 V W G4 G6 S4 S6 0/VBUS2 0/VBUS3 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Features • Power MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 75 120 90 250 ±30 4.5 138 75 50 1500 Unit V A October, 2012 VBUS2 V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM08TAM04P G– Rev 2 VBUS1 VDSS = 75V RDSon = 4.2mΩ max @ Tj = 25°C ID = 120A @ Tc = 25°C APTM08TAM04PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 75V VGS = 0V,VDS = 60V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 60A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V 4.2 2 Max 100 250 4.5 4 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 4530 1080 450 pF 153 VGS = 10V VBus = 60V ID =120A 25 nC 82 35 Inductive switching @ 125°C VGS = 15V VBus = 40V ID = 120A RG = 5Ω 60 ns 100 65 Inductive switching @ 25°C VGS = 15V, VBus = 40V ID = 120A, RG = 5Ω 290 µJ 317 Inductive switching @ 125°C VGS = 15V, VBus = 40V ID = 120A, RG = 5Ω 319 µJ 336 Source - Drain diode ratings and characteristics Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 120A IS = - 120A VR = 40V diS/dt = 100A/µs Tj = 25°C 100 Tj = 25°C 300 Max 120 90 1.3 6 200 Unit A V V/ns ns nC www.microsemi.com October, 2012 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 120A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–7 APTM08TAM04P G– Rev 2 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X trr Reverse Recovery Time APTM08TAM04PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.9 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) www.microsemi.com 3–7 APTM08TAM04P G– Rev 2 October, 2012 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM08TAM04PG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 Single Pulse 0.1 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=10V 300 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 250 200 150 6V 100 5.5V 50 0 160 120 80 TJ=25°C 40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 Normalized to VGS=10V @ 60A VGS=10V 1.1 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) 1 VGS=20V 0.9 0.8 120 100 80 60 40 20 0 0 50 100 150 200 250 ID, Drain Current (A) 25 50 75 100 125 150 October, 2012 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) www.microsemi.com 4–7 APTM08TAM04P G– Rev 2 ID, Drain Current (A) Transfert Characteristics ID, Drain Current (A) 350 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 60A 2.0 1.5 1.0 0.5 0.0 -50 -25 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100µs 100 1ms 10 Single pulse TJ=150°C TC=25°C 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=120A TJ=25°C 14 VDS=15V 12 10 VDS=60V 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) October, 2012 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 5–7 APTM08TAM04P G– Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM08TAM04PG APTM08TAM04PG Delay Times vs Current Rise and Fall times vs Current 120 120 td(off) 40 td(on) 80 40 20 20 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 1.5 0.5 Switching Energy (mJ) VDS=40V RG=5Ω TJ=125°C L=100µH Eoff Eon 0.25 Eon 0 75 100 125 150 175 200 ID, Drain Current (A) VDS=40V ID=120A TJ=125°C L=100µH 1 Eoff 0.5 Eon 0 25 50 75 100 125 150 175 200 0 10 ID, Drain Current (A) Operating Frequency vs Drain Current ZCS 150 VDS=40V D=50% RG=5Ω TJ=125°C TC=75°C 100 50 ZVS Hard switching 0 20 40 60 80 100 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 250 200 20 Gate Resistance (Ohms) 300 Frequency (kHz) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 0.75 Eon and Eoff (mJ) tr 60 120 ID, Drain Current (A) 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com October, 2012 60 VDS=40V RG=5Ω TJ=125°C L=100µH tf 6–7 APTM08TAM04P G– Rev 2 80 VDS=40V RG=5Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) 100 APTM08TAM04PG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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