APTM08TAM04PG-Rev2.pdf

APTM08TAM04PG
Triple phase leg
MOSFET Power Module
VBUS3
G1
G3
G5
S3
S1
U
G2
S2
0/VBUS1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
S5
V
W
G4
G6
S4
S6
0/VBUS2
0/VBUS3
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS Compliant
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Features
• Power MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
75
120
90
250
±30
4.5
138
75
50
1500
Unit
V
A
October, 2012
VBUS2
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM08TAM04P G– Rev 2
VBUS1
VDSS = 75V
RDSon = 4.2mΩ max @ Tj = 25°C
ID = 120A @ Tc = 25°C
APTM08TAM04PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 75V
VGS = 0V,VDS = 60V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 60A
VGS = VDS, ID = 1mA
VGS = ±30 V, VDS = 0V
4.2
2
Max
100
250
4.5
4
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
4530
1080
450
pF
153
VGS = 10V
VBus = 60V
ID =120A
25
nC
82
35
Inductive switching @ 125°C
VGS = 15V
VBus = 40V
ID = 120A
RG = 5Ω
60
ns
100
65
Inductive switching @ 25°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
290
µJ
317
Inductive switching @ 125°C
VGS = 15V, VBus = 40V
ID = 120A, RG = 5Ω
319
µJ
336
Source - Drain diode ratings and characteristics
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 120A
IS = - 120A
VR = 40V
diS/dt = 100A/µs
Tj = 25°C
100
Tj = 25°C
300
Max
120
90
1.3
6
200
Unit
A
V
V/ns
ns
nC
www.microsemi.com
October, 2012
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 120A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
2–7
APTM08TAM04P G– Rev 2
Symbol Characteristic
Continuous Source current
IS
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
trr
Reverse Recovery Time
APTM08TAM04PG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
3
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
Typ
Max
0.9
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
SP6-P Package outline (dimensions in mm)
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3–7
APTM08TAM04P G– Rev 2
October, 2012
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTM08TAM04PG
Thermal Impedance (°C/W)
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
0.9
0.8
0.7
0.7
0.6
0.5
0.5
0.4
0.3
0.3
0.2
Single Pulse
0.1
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VGS=10V
300
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
250
200
150
6V
100
5.5V
50
0
160
120
80
TJ=25°C
40
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
Normalized to
VGS=10V @ 60A
VGS=10V
1.1
1
2
3
4
5
6
7
VGS, Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature
140
RDS(on) vs Drain Current
1.2
ID, DC Drain Current (A)
1
VGS=20V
0.9
0.8
120
100
80
60
40
20
0
0
50
100
150
200
250
ID, Drain Current (A)
25
50
75
100
125
150
October, 2012
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
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4–7
APTM08TAM04P G– Rev 2
ID, Drain Current (A)
Transfert Characteristics
ID, Drain Current (A)
350
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 60A
2.0
1.5
1.0
0.5
0.0
-50 -25
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100µs
100
1ms
10
Single pulse
TJ=150°C
TC=25°C
1
0
25 50
75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
Coss
1000
Crss
100
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=120A
TJ=25°C
14
VDS=15V
12
10
VDS=60V
8
6
4
2
0
0
50
100
150
200
Gate Charge (nC)
October, 2012
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
5–7
APTM08TAM04P G– Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM08TAM04PG
APTM08TAM04PG
Delay Times vs Current
Rise and Fall times vs Current
120
120
td(off)
40
td(on)
80
40
20
20
0
0
25
50
75 100 125 150 175 200
ID, Drain Current (A)
25
1.5
0.5
Switching Energy (mJ)
VDS=40V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Eon
0.25
Eon
0
75 100 125 150 175 200
ID, Drain Current (A)
VDS=40V
ID=120A
TJ=125°C
L=100µH
1
Eoff
0.5
Eon
0
25
50
75
100 125 150 175 200
0
10
ID, Drain Current (A)
Operating Frequency vs Drain Current
ZCS
150
VDS=40V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
50
ZVS
Hard
switching
0
20
40
60
80
100
30
40
50
60
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
250
200
20
Gate Resistance (Ohms)
300
Frequency (kHz)
50
Switching Energy vs Gate Resistance
Switching Energy vs Current
0.75
Eon and Eoff (mJ)
tr
60
120
ID, Drain Current (A)
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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October, 2012
60
VDS=40V
RG=5Ω
TJ=125°C
L=100µH
tf
6–7
APTM08TAM04P G– Rev 2
80
VDS=40V
RG=5Ω
TJ=125°C
L=100µH
100
tr and tf (ns)
td(on) and td(off) (ns)
100
APTM08TAM04PG
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The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–7
APTM08TAM04P G– Rev 2
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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