APTM100DAM90G VDSS = 1000V RDSon = 90m typ @ Tj = 25°C ID = 78A @ Tc = 25°C Boost chopper MOSFET Power Module VBUS Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 OUT Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Q2 G2 S2 0/VBUS Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100DAM90G– Rev 2 October, 2012 Symbol VDSS APTM100DAM90G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 90 3 Max 400 2000 105 5 ±250 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 78A Td(on) Tr Td(off) Turn-on Delay Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Typ 20.7 3.5 0.64 nF 744 nC 96 488 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A RG =1.2 Rise Time Tf Min 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, RG = 1.2Ω 3.6 mJ 2.5 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, RG = 1.2Ω 5.7 mJ 3.1 Chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=1000V IF = 100A IF = 200A IF = 100A IF = 100A VR = 670V di/dt = 200A/µs www.microsemi.com Min 1000 Tj = 25°C Tj = 125°C Tc = 70°C Typ Max 250 500 Tj = 125°C 100 1.9 2.2 1.7 Tj = 25°C 300 Tj = 125°C 360 Tj = 25°C 800 Tj = 125°C 4050 Unit V µA A 2.5 V ns nC 2–7 APTM100DAM90G– Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM100DAM90G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.1 0.55 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g v See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100DAM90G– Rev 2 October, 2012 SP6 Package outline (dimensions in mm) APTM100DAM90G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS=15, 10&8V 200 7V 160 6.5V 120 6V 80 5.5V 40 0 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) TJ=125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 80 Normalized to VGS=10V @ 39A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100DAM90G– Rev 2 October, 2012 ID, Drain Current (A) 240 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=39A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 100µs 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 14 ID=78A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) 5–7 APTM100DAM90G– Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DAM90G APTM100DAM90G Delay Times vs Current Rise and Fall times vs Current 80 td(off) 160 VDS=670V RG=1.2Ω TJ=125°C L=100µH 120 80 0 40 tr 0 20 40 60 80 100 120 140 160 20 ID, Drain Current (A) 60 80 100 120 140 160 ID, Drain Current (A) 14 Eon VDS=670V RG=1.2Ω TJ=125°C L=100µH 8 6 Switching Energy (mJ) Eoff 4 2 0 Eoff VDS=670V ID=78A TJ=125°C L=100µH 12 10 8 Eon 6 4 Eoff 2 0 20 40 60 80 100 120 140 160 0 ID, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 ZVS 200 ZCS 150 VDS=670V D=50% RG=1.2Ω TJ=125°C TC=75°C 100 50 Hard switching 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100DAM90G– Rev 2 October, 2012 Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 10 Frequency (kHz) tf 20 td(on) 40 VDS=670V RG=1.2Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 APTM100DAM90G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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