APTM100UM65DAG-Rev3.pdf

APTM100UM65DAG
Single switch
with Series diode
MOSFET Power Module
VDSS = 1000V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
 Zero Current Switching resonant mode
Features
 Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- M5 power connectors
 High level of integration
 AlN substrate for improved thermal performance
Benefits
 Outstanding performance at high frequency
operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
145
110
580
±30
78
3250
30
50
3200
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM100UM65DAG – Rev 3 October, 2012
Symbol
VDSS
APTM100UM65DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 72.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Typ
65
3
Max
400
2
78
5
±400
Unit
µA
mA
m
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Typ
28.5
5.08
0.9
nF
1068
VGS = 10V
VBus = 500V
ID = 145A
Fall Time
Eon
Min
nC
136
692
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75
18
14
140
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
4.8
ns
55
mJ
2.9
8
mJ
3.9
Series diode ratings and characteristics
VRRM
IRM
Test Conditions
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
1000
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=1000V
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 667V
di/dt = 800A/µs
www.microsemi.com
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Unit
750
1000
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
350
3.04
Tj = 125°C
14.4
µA
A
2.5
V
ns
µC
2–7
APTM100UM65DAG – Rev 3 October, 2012
Symbol Characteristic
APTM100UM65DAG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Transistor
Junction to Case Thermal Resistance
Series diode
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To Heatsink
M6
Mounting torque
For teminals
M5
Package Weight
4000
-40
-40
-40
3
2
Typ
Max
0.038
0.23
Unit
°C/W
V
150
125
100
5
3.5
300
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM100UM65DAG – Rev 3 October, 2012
SP6 Package outline (dimensions in mm)
APTM100UM65DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.035
0.9
0.03
0.7
0.025
0.02
0.5
0.015
0.3
0.01
Single Pulse
0.1
0.05
0.005
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
360
480
VGS=15, 10V
7V
280
ID, Drain Current (A)
6.5V
240
200
6V
160
120
80
5.5V
40
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
400
320
240
TJ=25°C
160
80
TJ=125°C
5V
0
0
5
10
15
20
25
30
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 72.5A
1.3
1.2
1.1
VGS=10V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
VGS=20V
0.9
0.8
120
80
40
0
0
80
160
240
320
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
4–7
APTM100UM65DAG – Rev 3 October, 2012
ID, Drain Current (A)
320
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=72.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by RDSon
100
1ms
10
10ms
Single pulse
TJ=150°C
TC=25°C
1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=145A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
300
600
900
1200
1500
Gate Charge (nC)
5–7
APTM100UM65DAG – Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM65DAG
APTM100UM65DAG
Delay Times vs Current
Rise and Fall times vs Current
100
160
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
80
120
tr and tf (ns)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
80
40
td(on)
60
40
tr
20
0
0
50
94
138
182
226
270
50
94
ID, Drain Current (A)
10
Eon
Switching Energy (mJ)
Switching Energy (mJ)
VDS=670V
RG=0.75Ω
TJ=125°C
L=100µH
12
Eoff
8
6
4
2
0
18
Eoff
14
Eon
10
6
94
138
182
226
270
Eoff
0
ID, Drain Current (A)
1
2
3
4
5
6
7
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
250
Frequency (kHz)
VDS=670V
ID=145A
TJ=125°C
L=100µH
22
2
50
ZCS
200
50
270
26
14
100
138
182
226
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
16
150
tf
VDS=670V
D=50%
RG=0.75Ω
TJ=125°C
TC=75°C
Hard
switching
0
15
35
55
75
95
115
135
ID, Drain Current (A)
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
6–7
APTM100UM65DAG – Rev 3 October, 2012
td(on) and td(off) (ns)
td(off)
APTM100UM65DAG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
7–7
APTM100UM65DAG – Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
Similar pages