2N7224U, 2N7225U, 2N7227U & 2N7228U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a thru hole TO-254AA package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592. RoHS compliant by design. APPLICATIONS / BENEFITS • • TO-267AB) Package (See part nomenclature for all available options.) • U (SMD-1 or Also available in: Low-profile design. Military and other high-reliability applications. TO-254AA package (leaded) 2N7224 & 2N7228 MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N7224U 2N7225U 2N7227U 2N7228U (2) Drain Current, dc @ TC = +100 ºC 2N7224U 2N7225U 2N7227U 2N7228U (3) Off-State Current (Peak Total Value) 2N7224U 2N7225U 2N7227U 2N7228U Source Current 2N7224U 2N7225U 2N7227U 2N7228U NOTES: 1. 2. Symbol Value TJ & Tstg RӨJC -55 to +150 0.83 4 150 ± 20 34.0 27.4 14.0 12.0 21 17 9 8 136 110 56 48 34.0 27.4 14.0 12.0 PT VGS ID1 ID2 IDM IS Unit o °C C/W W V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 A Derated linearly by 1.2 W/ºC for TC > +25 ºC. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by pin diameter: MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com 3. IDM = 4 x ID1 as calculated in note 2. T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 1 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U MECHANICAL and PACKAGING • • • • • CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Part number, date code, A = anode. WEIGHT: 0.9 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N7224 U Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial Symbol di/dt IF RG VDD VDS VGS SMD Surface Mount Package JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 2 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N7224U 2N7225U 2N7227U 2N7228U VGS = 0 V, ID = 1.0 mA Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25 mA VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C Gate Current VGS = ± 20 V, VDS = 0 V VGS = ± 20 V, VDS = 0 V, TJ = +125°C Drain Current VGS = 0 V, VDS = 80 V VGS = 0 V, VDS = 160 V VGS = 0 V, VDS = 320 V VGS = 0 V, VDS = 400 V Drain Current VGS = 0 V, VDS = 80 V, TJ = +125 °C VGS = 0 V, VDS = 160 V, TJ = +125 °C VGS = 0 V, VDS = 320 V, TJ = +125 °C VGS = 0 V, VDS = 400 V, TJ = +125 °C V(BR)DSS 100 200 400 500 2.0 1.0 Max. Unit V 4.0 V 5.0 IGSS1 IGSS2 ±100 ±200 nA 2N7224U 2N7225U 2N7227U 2N7228U IDSS1 25 µA 2N7224U 2N7225U 2N7227U 2N7228U IDSS2 0.25 mA rDS(on)1 0.070 0.100 0.315 0.415 Ω rDS(on)2 0.081 0.105 0.415 0.515 Ω rDS(on)3 0.11 0.17 0.68 0.90 VSD 1.8 1.9 1.7 1.7 2N7224U 2N7225U 2N7227U 2N7228U Static Drain-Source On-State Resistance VGS = 10 V, ID = 34.0 A pulsed VGS = 10 V, ID = 27.4 A pulsed VGS = 10 V, ID = 14.0 A pulsed VGS = 10 V, ID = 12.0 A pulsed 2N7224U 2N7225U 2N7227U 2N7228U T4-LDS-0102-1, Rev. 1 (121485) Min. VGS(th)1 VGS(th)2 VGS(th)3 Static Drain-Source On-State Resistance VGS = 10 V, ID = 21.0 A pulsed VGS = 10 V, ID = 17.0 A pulsed VGS = 10 V, ID = 9.0 A pulsed VGS = 10 V, ID = 8.0 A pulsed Static Drain-Source On-State Resistance TJ = +125°C VGS = 10 V, ID = 21.0 A pulsed VGS = 10 V, ID = 17.0 A pulsed VGS = 10 V, ID = 9.0 A pulsed VGS = 10 V, ID = 8.0 A pulsed Diode Forward Voltage VGS = 0 V, ID = 34.0 A pulsed VGS = 0 V, ID = 27.4 A pulsed VGS = 0 V, ID = 14.0 A pulsed VGS = 0 V, ID = 12.0 A pulsed Symbol 2N7224U 2N7225U 2N7227U 2N7228U 2N7224U 2N7225U 2N7227U 2N7228U ©2012 Microsemi Corporation Ω V Page 3 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol On-State Gate Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224U 2N7225U 2N7227U 2N7228U Gate to Source Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224U 2N7225U 2N7227U 2N7228U Gate to Drain Charge VGS = 10 V, ID = 34.0 A, VDS = 50 V VGS = 10 V, ID = 27.4 A, VDS = 50 V VGS = 10 V, ID = 14.0 A, VDS = 50 V VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7224U 2N7225U 2N7227U 2N7228U Min. Max. Unit Qg(on) 125 115 110 120 nC Qgs 22 22 18 19 nC Qgd 65 60 65 70 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Rinse time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Turn-off delay time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Fall time ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V Diode Reverse Recovery Time di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 34.0 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 27.4 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 14.0 A di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 12.0 A T4-LDS-0102-1, Rev. 1 (121485) Symbol Min. 2N7224U 2N7225U 2N7227U 2N7228U td(on) 35 ns 2N7224U 2N7225U 2N7227U 2N7228U tr 190 ns 2N7224U 2N7225U 2N7227U 2N7228U td(off) 170 ns 2N7224U 2N7225U 2N7227U 2N7228U tf 130 ns trr 500 950 1200 1600 ns 2N7224U 2N7225U 2N7227U 2N7228U ©2012 Microsemi Corporation Page 4 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U Thermal Response (ZθJC) GRAPHS t1, Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Impedance Curves T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 5 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U GRAPHS (continued) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs TC CASE TEMPERATURE (ºC) For 2N7225U ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) TC CASE TEMPERATURE (ºC) For 2N7224U TC CASE TEMPERATURE (ºC) For 2N7227U T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation TC CASE TEMPERATURE (ºC) For 2N7228U Page 6 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7224U VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7225U T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 7 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U ID DRAIN CURRENT (AMPERES) GRAPHS (continued) ID DRAIN CURRENT (AMPERES) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7227U VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7228U T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Page 8 of 9 2N7224U, 2N7225U, 2N7227U & 2N7228U PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0102-1, Rev. 1 (121485) ©2012 Microsemi Corporation Symbol BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Term 1 Term 2 Term 3 DIMENSIONS MILLIMETERS Min Max Min Max .620 .630 15.75 16.00 .445 .455 11.30 11.56 .142 3.60 .010 .020 .026 .050 .410 .420 10.41 10.67 .152 .162 3.86 4.11 5.33 BSC .210 BSC 2.67 BSC .105 BSC .370 .380 9.40 9.65 .135 .145 3.43 3.68 .030 0.76 .035 0.89 Drain Gate Source INCH Page 9 of 9