APT85GR120J_B.pdf

APT85GR120J
APT85GR120J
1200V, 85A, Vce(on) = 2.5V Typical
Ultra Fast NPT - IGBT®
E
E
The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior
ruggedness and ultrafast switching speed.
C
G
Features
• Low Saturation Voltage
• Low Tail Current
27
"UL Recognized"
• Short Circuit Withstand Rated SO
2
T-
IS OT OP ®
file # E145592
• High Frequency Switching • RoHS Compliant
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
MAXIMUM RATINGS Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Ratings
Vces
Collector Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
118
I C2
Continuous Collector Current @ TC = 75°C
85
I CM
Pulsed Collector Current
340
SCWT
PD
TJ,TSTG
TL
1
Unit
V
A
Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C
10
μs
Total Power Dissipation @ TC = 25°C
595
W
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Min
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
1200
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Typ
Max
5.0
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 25°C)
2.5
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 85A, Tj = 125°C)
3.3
Collector-Emitter On Voltage (VGE = 15V, I C = 170A, Tj = 25°C)
3.5
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
10
(VCE = VGE, I C = 2.5mA, Tj = 25°C)
3.5
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
2
Unit
Volts
1000
µA
±250
nA
100
Gate-Emitter Leakage Current (VGE = ±20V)
Rev B
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
3-2013
Parameter
Microsemi Website - http://www.microsemi.com
052-6403
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT85GR120J
Parameter
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate to Emitter Plateau Voltage
Qg
Total Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate- Collector Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Min
Typ
Capacitance
8400
VGE = 0V, VCE = 25V
725
f = 1MHz
190
V
490
660
60
85
IC = 85A
230
320
VGE = 15V
VCE= 600V
Inductive Switching (25°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
300
nC
ns
85
IC = 85A
Turn-On Switching Energy
RG = 4.3 Ω
6000
9000
Eoff 6
Turn-Off Switching Energy
TJ = +25°C
3800
5700
td(on)
Turn-On Delay Time
Eon2
5
tr
td(off)
tf
Eon2
4
Inductive Switching (125°C)
43
Current Rise Time
VCC = 600V
70
Turn-Off Delay Time
VGE = 15V
350
Current Fall Time
Unit
pF
7.5
Gate Charge
Current Fall Time
Max
µJ
ns
95
IC = 85A
5
Turn-On Switching Energy
RG = 4.3 Ω
Eoff 6
Turn-Off Switching Energy
TJ = +125°C
4
7800
11,700
4900
7350
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
RθJC
Junction to Case
-
-
0.21
°C/W
WT
Package Weight
-
1.03
-
oz
-
-
10
in·lbf
-
-
1.1
N·m
2500
-
-
Volts
Torque
Terminals and Mounting Screws.
VIsolation
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the energy loss at turn-on and includes the charge stored in the freewheeling diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6403
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
Rev B
3-2013
0.25
0.3
t2
0.05
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0
t1
0.05
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TYPICAL PERFORMANCE CURVES
APT85GR120J
60
200
IC, COLLECTOR CURRENT (A)
40
30
20
10
0
40
60
100
120
140
160
IC(A)
FIGURE 2, Max Frequency vs Current (Tcase = 75°C)
300
15V 13V
200
9.0V
150
8.0V
100
7.5V
50
0
7V
6.5V
0
4
8
12
16
250
200
150
100
TJ= 150°C
50
80
0
1.20
TJ= -55°C
1
2 3
4 5
6
7 8
9 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6, Transfer Characteristics
40
20
0
0
1
2
3
4
5
6
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Saturation Voltage Characteristics
6
5
IC = 170A
4
IC = 85A
3
2
IC = 42.5A
1
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
-50
-25
0
25
50 75
100 125
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
6
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
IC = 170A
3
IC = 85A
IC = 42.5A
2
1
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage
160
6
140
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE
FIGURE 8, Breakdown Voltage vs Junction Temperature
120
100
80
3-2013
IC, DC COLLECTOR CURRENT (A)
1.15
0.85
TJ= 150°C
60
60
40
Rev B
0
TJ= 125°C
TJ= 25°C
TJ= 125°C
100
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= 25°C
120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4, Output Characteristics (TJ = 25°C)
300
TJ= - 55°C
20
0
-50
-25
0
25
50 75 100 125 150
TC, Case Temperature (°C)
FIGURE 9, DC Collector Current vs Case Temperature
052-6403
IC, COLLECTOR CURRENT (A)
10V
= 15V
140
80
250
GE
160
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FREQUENCY (kHz)
50
BVCES, BREAKDOWN VOLTAGE
(NORMALIZED)
V
180
TYPICAL PERFORMANCE CURVES
APT85GR120J
2.0E−8
1.0E−8
C, CAPACITANCE (F)
VGE, GATE-TO-EMITTER VOLTAGE (V)
18
Cies
1.0E−9
Coes
Cres
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
180
SWITCHING TIME (ns)
140
100
80
Td(on)
0
100
200
300
400
GATE CHARGE (nC)
FIGURE 11, Gate charge
500
Td(off)
350
300
250
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C
TJ = 125°C
200
150
Tf
0
20 40
60 80 100 120 140 160 180
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-Off Time vs Collector Current
16000
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C
TJ = 125°C
14000
SWITCHING ENERGY LOSS (μJ)
SWITCHING ENERGY LOSS (μJ)
Eon2
12000
Eon2
10000
10000
5000
Eoff
8000
Eoff
6000
4000
VCE = 600V, VGE=15V, IC = 85A
TJ = 125°C
2000
0
0
40
80
120
160
200
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Energy Loss vs Collector Current
0
10
20
30
40
50
RG, GATE RESISTANCE (Ω) FIGURE 15, Energy Loss vs Gate Resistance
1000
Eon2
7000
6000
IC, COLLECTOR CURRENT (A)
SWITCHING ENERGY LOSSES (μJ)
2
10 20 50 70 90 110 130 150 170
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-On Time vs Collector Current
8000
3-2013
4
50
0
Rev B
VCE = 960V
6
20
20000
052-6403
8
100
15000
VCE = 600V
10
40
0
VCE = 240V
12
400
Tr
120
60
14
450
SWITCHING TIME (ns)
160
J
0
1.0E−10
VCE = 600V, VGE=15V, RG = 4.3Ω TJ = 25°C or 125°C
I = 85A
C
T = 25°C
16
VCE = 600V, VGE=15V, RG = 4.3Ω IC = 85A
5000
Eoff
4000
3000
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy vs Junction Temperature
100
1ms
10ms
1
0.1
100µs
10
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Minimum Switching Safe Operating Area
APT85GR120J
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
4.0 (.157)
4.2 (.165)
(2 places)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Emitter
Collector
30.1 (1.185)
30.3 (1.193)
*Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Dimensions in Millimeters and (Inches)
Gate
3-2013
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
0.75 (.030)
0.85 (.033)
Rev B
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
052-6403
7.8 (.307)
8.2 (.322)
APT85GR120J
052-6403
Rev B
3-2013
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