APTM120A15FG Phase leg MOSFET Power Module VDSS = 1200V RDSon = 150m typ @ Tj = 25°C ID = 60A @ Tc = 25°C Application VBUS Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2 G2 S2 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 60 45 240 ±30 175 1250 22 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120A15FG– Rev 2 October, 2012 Symbol VDSS APTM120A15FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 30A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 150 3 Max 500 3000 175 5 ±250 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 60A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 20.6 3.08 0.52 nF 748 nC 96 480 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 60A RG = 1.2 15 ns 160 45 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 60A, RG = 1.2Ω 3.96 mJ 2.74 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 60A, RG = 1.2Ω 6.26 mJ 3.43 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 60 45 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 60A IS = - 60A VR = 600V diS/dt = 400A/µs Tj = 25°C 8 Tj = 125°C 28 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 700A/µs VR VDSS Tj 150°C IS - 60A www.microsemi.com 2–7 APTM120A15FG– Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM120A15FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM120A15FG– Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120A15FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 200 320 6.5V 120 80 6V 40 5.5V 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 7V ID, Drain Current (A) TJ=125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 70 Normalized to VGS=10V @ 30A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 60 50 40 30 20 10 0 0 40 80 120 160 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120A15FG– Rev 2 October, 2012 ID, Drain Current (A) VGS=15, 10 & 8V 160 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=30A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10 0.6 10ms Single pulse TJ=150°C TC=25°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=60A TJ=25°C 12 10 50 VDS, Drain to Source Voltage (V) VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 0 160 320 480 640 800 960 Gate Charge (nC) www.microsemi.com 5–7 APTM120A15FG– Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A15FG APTM120A15FG Delay Times vs Current td(off) VDS=800V RG=1.2Ω TJ=125°C L=100µH 150 60 120 tr and tf (ns) VDS=800V RG=1.2Ω TJ=125°C L=100µH 90 60 40 tr 20 td(on) 30 0 0 20 40 60 80 100 120 140 20 ID, Drain Current (A) 60 80 100 120 ID, Drain Current (A) 140 14 VDS=800V RG=1.2Ω TJ=125°C L=100µH 10 8 Eon Switching Energy (mJ) Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eoff 6 4 2 12 10 20 40 60 80 100 120 ID, Drain Current (A) VDS=800V ID=60A TJ=125°C L=100µH Eoff 8 6 Eon Eoff 4 0 2 0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75 140 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 200 Frequency (kHz) tf 150 ZCS VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C 100 50 ZVS Hard switching 0 5 15 25 35 45 ID, Drain Current (A) 100 TJ=150°C TJ=25°C 10 1 55 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120A15FG– Rev 2 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 APTM120A15FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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