APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application Zero Current Switching resonant mode Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 50 37 200 ±30 240 1250 12 30 1300 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120A20DG Rev 2 October, 2012 Symbol VDSS APTM120A20DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Typ 200 3 Max 1.5 6 240 5 ±450 Unit Max Unit mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 50A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 15.2 2.2 0.42 nF 600 nC 84 390 10 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A RG =0.8 10 ns 68 36 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 2.79 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 5.6 mJ 0.6 mJ 0.81 Series diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 125°C DC Forward Current Diode Forward Voltage Tc = 70°C IF = 120A IF = 240A IF = 120A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt = 400A/µs Typ 250 600 120 2 2.3 Tj = 125°C 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 2.4 Tj = 125°C 8 www.microsemi.com Max Unit V µA A 2.5 V ns µC 2–7 APTM120A20DG Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTM120A20DG Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature Min Transistor Series diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.1 0.46 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM120A20DG Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120A20DG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 150 180 7V ID, Drain Current (A) 6.5V 90 6V 60 5.5V 30 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 120 90 60 TJ=25°C 30 0 0 0 5 10 15 20 25 30 0 VDS, Drain to Source Voltage (V) 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 50 Normalized to VGS=10V @ 25A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55°C TJ=125°C 5V 0.9 0.8 40 30 20 10 0 0 30 60 90 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120A20DG Rev 2 October, 2012 ID, Drain Current (A) VGS=15, 10 & 8V 120 APTM120A20DG 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) 2.5 VGS=10V ID=25A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 limited by RDSon 1ms 10 0.6 Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=50A TJ=25°C 12 10 8 VDS=240V VDS=600V VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 120 240 360 480 600 720 840 Gate Charge (nC) www.microsemi.com 5–7 APTM120A20DG Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM120A20DG Delay Times vs Current Rise and Fall times vs Current 50 td(off) 60 tf tr and tf (ns) VDS=800V RG=0.8Ω TJ=125°C L=100µH 40 20 VDS=800V RG=0.8Ω TJ=125°C L=100µH 25 td(on) 0 0 10 30 50 70 90 110 10 30 ID, Drain Current (A) 110 9 VDS=800V RG=0.8Ω TJ=125°C L=100µH 9 Eon Switching Energy (mJ) Switching Energy (mJ) 50 70 90 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 6 3 Eoff 0 Eon 6 VDS=800V ID=50A TJ=125°C L=100µH 3 Eoff 0 10 30 50 70 90 110 0 ID, Drain Current (A) Operating Frequency vs Drain Current 150 125 Hard switching 100 ZCS 75 50 25 0 10 20 30 40 ID, Drain Current (A) 2 3 4 5 6 Source to Drain Diode Forward Voltage 1000 VDS=800V D=50% RG=0.8Ω TJ=125°C TC=75°C 175 1 Gate Resistance (Ohms) IDR, Reverse Drain Current (A) 200 Frequency (kHz) tr TJ=150°C 100 TJ=25°C 10 1 50 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120A20DG Rev 2 October, 2012 td(on) and td(off) (ns) 80 APTM120A20DG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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