APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 50 37 200 ±30 240 1250 12 30 1300 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120A20SG Rev 3 October, 2013 Symbol VDSS APTM120A20SG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1200V VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Min Typ 200 3 Max 1.5 240 5 ±600 Unit mA mΩ V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energ Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 15.2 2.2 0.42 nF 600 VGS = 10V VBus = 600V ID = 50A 84 nC 390 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A RG =0.8Ω 10 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 2.79 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 5.6 10 ns 68 36 mJ 0.6 mJ 0.81 0.1 °C/W Max Unit V µA Series diode ratings and characteristics IF VF DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min 1000 300 Tc = 80°C IF = 120A IF = 240A IF = 120A IF = 120A VR = 667V di/dt = 400A/µs Typ Tj = 125°C 120 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 1.52 Tj = 125°C 7.2 Junction to Case Thermal Resistance A 2.5 V ns µC 0.46 www.microsemi.com °C/W 2–7 APTM120A20SG Rev 3 October, 2013 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1000V APTM120A20SG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V DC Forward Current IF = 120A I Diode Forward Voltage F = 240A IF = 120A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 120A VR = 800V di/dt = 400A/µs Min 1200 Typ Max 350 Tj = 125°C 120 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 2.4 Tj = 125°C 8 Tc = 70°C Junction to Case Thermal Resistance Unit V µA A 2.5 V ns µC 0.46 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To heatsink M6 Mounting torque For terminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 100 5 3.5 300 Unit V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM120A20SG Rev 3 October, 2013 SP6 Package outline (dimensions in mm) APTM120A20SG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 150 180 7V 120 6.5V 90 6V 60 5.5V 30 ID, Drain Current (A) VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 120 90 60 TJ=25°C 30 TJ=125°C 5V 0 0 5 10 15 20 25 0 30 0 1.2 VGS=10V 1.1 VGS =20V 1 0.9 0.8 30 4 5 6 7 8 50 Normalized to VGS=10V @ 25A 0 3 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1.3 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1 60 90 120 40 30 20 10 0 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120A20SG Rev 3 October, 2013 ID, Drain Current (A) VGS=15, 10 & 8V Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=25A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area 1000 1.0 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 75 T J, Junction Temperature (°C) T J, Junction Temperature (°C) 1.1 0.9 0.8 0.7 100µs 100 limited by R DSon 1ms 10 0.6 Single pulse TJ =150°C TC=25°C 10ms 1 25 50 75 100 125 1 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 C, Capacitance (pF) 50 Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 10 100 1000 1200 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=50A VDS=240V 12 TJ =25°C VDS=600V 10 8 VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 120 240 360 480 600 720 840 Gate Charge (nC) www.microsemi.com 5–7 APTM120A20SG Rev 3 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM120A20SG APTM120A20SG Delay Times vs Current Rise and Fall times vs Current 50 td(off) 60 tf t r and t f (ns) VDS=800V R G =0.8Ω TJ=1 25 °C L=100µH 40 20 VDS=800V R G =0.8Ω TJ=1 25 °C L=100µH 25 td(on) 0 10 30 50 70 90 0 110 10 30 70 90 110 Switching Energy vs Gate Resistance Switching Energy vs Current 9 12 VDS=800V R G =0.8Ω TJ=1 25 °C L=100µH 9 Eon Switching Energy (mJ) Switching Energy (mJ) 50 ID, Drain Current (A) ID, Drain Current (A) 6 3 Eoff 0 Eon 6 VDS=800V I D=50A TJ=1 25 °C L=100µH 3 Eoff 0 10 30 50 70 90 0 110 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS 300 200 2 3 4 5 6 Source to Drain Diode Forward Voltage 1000 VDS=800V D=50% R G =0.8Ω TJ=1 25 °C TC =75 °C ZCS 100 1 Gate Resistance (Ohms) IDR, Reverse Drain Current (A) 400 Frequency (kHz) tr Hard switching TJ=150°C 100 TJ=25°C 10 1 0 10 20 30 40 50 0.2 0.4 0.6 0.8 ID, Drain Current (A) 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120A20SG Rev 3 October, 2013 t d(on) and t d(off) (ns) 80 APTM120A20SG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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