APTM120A20SG-Rev3.pdf

APTM120A20SG
Phase leg
Series & parallel diodes
MOSFET Power Module
VBUS
Q1
G1
OUT
S1
Q2
G2
0/VBUS
S2
VDSS = 1200V
RDSon = 200mΩ typ @ Tj = 25°C
ID = 50A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
50
37
200
±30
240
1250
12
30
1300
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM120A20SG Rev 3 October, 2013
Symbol
VDSS
APTM120A20SG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 1200V
VGS = 10V, ID = 25A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Min
Typ
200
3
Max
1.5
240
5
±600
Unit
mA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energ
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
15.2
2.2
0.42
nF
600
VGS = 10V
VBus = 600V
ID = 50A
84
nC
390
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 50A
RG =0.8Ω
10
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8Ω
2.79
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 50A, RG = 0.8Ω
5.6
10
ns
68
36
mJ
0.6
mJ
0.81
0.1
°C/W
Max
Unit
V
µA
Series diode ratings and characteristics
IF
VF
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Min
1000
300
Tc = 80°C
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 667V
di/dt = 400A/µs
Typ
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
1.52
Tj = 125°C
7.2
Junction to Case Thermal Resistance
A
2.5
V
ns
µC
0.46
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°C/W
2–7
APTM120A20SG Rev 3 October, 2013
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1000V
APTM120A20SG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=1200V
DC Forward Current
IF = 120A
I
Diode Forward Voltage
F = 240A
IF = 120A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 120A
VR = 800V
di/dt = 400A/µs
Min
1200
Typ
Max
350
Tj = 125°C
120
2
2.3
1.8
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
2.4
Tj = 125°C
8
Tc = 70°C
Junction to Case Thermal Resistance
Unit
V
µA
A
2.5
V
ns
µC
0.46
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–7
APTM120A20SG Rev 3 October, 2013
SP6 Package outline (dimensions in mm)
APTM120A20SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
150
180
7V
120
6.5V
90
6V
60
5.5V
30
ID, Drain Current (A)
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
150
120
90
60
TJ=25°C
30
TJ=125°C
5V
0
0
5
10
15
20
25
0
30
0
1.2
VGS=10V
1.1
VGS =20V
1
0.9
0.8
30
4
5
6
7
8
50
Normalized to
VGS=10V @ 25A
0
3
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
60
90
120
40
30
20
10
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM120A20SG Rev 3 October, 2013
ID, Drain Current (A)
VGS=15, 10 & 8V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=25A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
1000
1.0
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
75
T J, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.1
0.9
0.8
0.7
100µs
100
limited by R DSon
1ms
10
0.6
Single pulse
TJ =150°C
TC=25°C
10ms
1
25
50
75
100
125
1
150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
C, Capacitance (pF)
50
Ciss
10000
Coss
1000
Crss
100
0
10
20
30
40
10
100
1000
1200
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=50A
VDS=240V
12
TJ =25°C
VDS=600V
10
8
VDS=960V
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
120 240 360 480 600 720 840
Gate Charge (nC)
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5–7
APTM120A20SG Rev 3 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM120A20SG
APTM120A20SG
Delay Times vs Current
Rise and Fall times vs Current
50
td(off)
60
tf
t r and t f (ns)
VDS=800V
R G =0.8Ω
TJ=1 25 °C
L=100µH
40
20
VDS=800V
R G =0.8Ω
TJ=1 25 °C
L=100µH
25
td(on)
0
10
30
50
70
90
0
110
10
30
70
90
110
Switching Energy vs Gate Resistance
Switching Energy vs Current
9
12
VDS=800V
R G =0.8Ω
TJ=1 25 °C
L=100µH
9
Eon
Switching Energy (mJ)
Switching Energy (mJ)
50
ID, Drain Current (A)
ID, Drain Current (A)
6
3
Eoff
0
Eon
6
VDS=800V
I D=50A
TJ=1 25 °C
L=100µH
3
Eoff
0
10
30
50
70
90
0
110
ID, Drain Current (A)
Operating Frequency vs Drain Current
ZVS
300
200
2
3
4
5
6
Source to Drain Diode Forward Voltage
1000
VDS=800V
D=50%
R G =0.8Ω
TJ=1 25 °C
TC =75 °C
ZCS
100
1
Gate Resistance (Ohms)
IDR, Reverse Drain Current (A)
400
Frequency (kHz)
tr
Hard
switching
TJ=150°C
100
TJ=25°C
10
1
0
10
20
30
40
50
0.2 0.4 0.6 0.8
ID, Drain Current (A)
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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APTM120A20SG Rev 3 October, 2013
t d(on) and t d(off) (ns)
80
APTM120A20SG
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM120A20SG Rev 3 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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