APTM120U10SAG-Rev3.pdf

APTM120U10SAG
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for MOSFET improved thermal
performance
S
Q1
G
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
116
86
464
±30
120
3290
24
50
3200
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM120U10SAG Rev 3 November, 2013
Symbol
VDSS
APTM120U10SAG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 1200V
VGS = 10V, ID = 58A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Min
Typ
100
3
Max
1
120
5
±400
Unit
mA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
28.9
4.4
0.8
Max
Unit
nF
1100
VGS = 10V
VBus = 600V
ID = 116A
128
nC
716
20
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2Ω
17
ns
245
62
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
5
mJ
4.6
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2Ω
9.2
mJ
5.6
0.038
°C/W
Max
Unit
750
V
µA
Series diode ratings and characteristics
VRRM
IRM
IF
VF
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
Tc = 80°C
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 667V
di/dt = 800A/µs
Typ
1000
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
Tj = 125°C
350
3.04
14.4
Junction to Case Thermal Resistance
A
2.5
V
ns
µC
0.23
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°C/W
2–7
APTM120U10SAG Rev 3 November, 2013
Symbol Characteristic
APTM120U10SAG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 1200V
DC Forward Current
Tc = 80°C
IF = 180A
IF = 360A
Diode Forward Voltage
IF = 180A
Tj = 125°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 180A
VR = 800V
di/dt = 600A/µs
Min
1200
Typ
Max
250
180
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
350
Tj = 25°C
1.7
Tj = 125°C
8.6
Junction to Case Thermal Resistance
Unit
V
µA
A
3.5
V
ns
µC
0.32
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–7
APTM120U10SAG Rev 3 November, 2013
SP6 Package outline (dimensions in mm)
APTM120U10SAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
0.9
0.035
0.03
0.7
0.025
0.5
0.02
0.015
0.3
0.01
0.005
0
0.00001
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
280
250
VGS=15, 10V
7V
ID, Drain Current (A)
200
6V
160
5.5V
120
80
5V
40
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
150
100
TJ=25°C
50
TJ=125°C
4.5V
0
0
5
10
15
20
25
0
30
0
Normalized to
VGS=10V @ 58A
1.2
VGS=10V
1.1
VGS=20V
1
0.9
40
80
120
160
200
3
4
5
6
7
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.3
0
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
240
100
80
60
40
20
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM120U10SAG Rev 3 November, 2013
ID, Drain Current (A)
240
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=58A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
1000
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
75
T J, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100µs
limited by R DSon
100
1ms
10ms
10
0.6
Single pulse
TJ =150°C
TC=25°C
1
25
50
75
100
125
150
1
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
C, Capacitance (pF)
50
10000
Coss
Crss
1000
100
0
10
20
30
40
10
100
1000
1200
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=116A
VDS=240V
12
TJ =25°C
10
VDS=600V
8
VDS=960V
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
300
600
900
1200
1500
Gate Charge (nC)
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5–7
APTM120U10SAG Rev 3 November, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM120U10SAG
APTM120U10SAG
Delay Times vs Current
Rise and Fall times vs Current
100
300
200
td(off)
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
150
100
50
0
60
90
120
150
60
tr
40
20
td(on)
30
0
180
30
90
120
150
180
Switching Energy vs Gate Resistance
Switching Energy vs Current
24
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
12
Switching Energy (mJ)
16
Eon
Eoff
8
4
0
30
60
90
120
150
VDS=800V
I D=116A
TJ=1 25 °C
L=100µH
20
Eoff
16
12
Eon
8
4
180
0
ID, Drain Current (A)
2
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
175
150
ZVS
125
ZCS
100
75
VDS=800V
D=50%
R G =1.2Ω
TJ=1 25 °C
TC =75 °C
50
25
Hard
switching
TJ=150°C
100
TJ =25°C
10
1
0
40
60
80
100
0.2 0.4 0.6 0.8
ID, Drain Current (A)
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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6–7
APTM120U10SAG Rev 3 November, 2013
Switching Energy (mJ)
60
ID, Drain Current (A)
ID, Drain Current (A)
Frequency (kHz)
tf
VDS=800V
R G =1.2Ω
TJ=1 25 °C
L=100µH
80
t r and t f (ns)
t d(on) and t d(off) (ns)
250
APTM120U10SAG
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTM120U10SAG Rev 3 November, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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