APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70m typ @ Tj = 25°C ID = 171A @ Tc = 25°C Application Zero Current Switching resonant mode SK S D G Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance DK Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 171 126 684 ±30 80 5000 24 50 3200 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120UM70DAG Rev 2 October, 2012 Symbol VDSS APTM120UM70DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Typ 70 3 Max 1.5 6 80 5 ±600 Unit Max Unit mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 171A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 43.5 6.6 1.2 nF 1650 nC 192 1074 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 171A RG =0.8 17 ns 245 62 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 171A, RG = 0.8Ω 7.6 mJ 6.9 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 171A, RG = 0.8Ω 13.8 mJ 8.5 Series diode ratings and characteristics IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 125°C DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 240A VR = 800V di/dt = 800A/µs Tj = 125°C Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 4.8 Tj = 125°C 16 www.microsemi.com Max 750 1000 240 2 2.3 1.8 Tc = 70°C IF = 240A IF = 480A IF = 240A Typ Unit V µA A 2.5 V ns µC 2–7 APTM120UM70DAG Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTM120UM70DAG Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC Operating junction temperature range Storage Temperature Range Operating Case Temperature Min Transistor Series diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.025 0.23 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM120UM70DAG Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120UM70DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 VGS=15, 10V 360 300 6V 240 5.5V 180 120 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7V ID, Drain Current (A) 5V 60 360 300 240 TJ=-55°C 180 120 TJ=25°C 60 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 180 Normalized to VGS=10V @ 85.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 0.9 0.8 135 90 45 0 0 60 120 180 240 300 360 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120UM70DAG Rev 2 October, 2012 ID, Drain Current (A) 420 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=85.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 1ms 10ms 10 0.6 Single pulse TJ=150°C TC=25°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=171A TJ=25°C 12 10 VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 420 840 1260 1680 2100 Gate Charge (nC) www.microsemi.com 5–7 APTM120UM70DAG Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120UM70DAG APTM120UM70DAG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 250 200 VDS=800V RG=0.8Ω TJ=125°C L=100µH 150 100 50 VDS=800V RG=0.8Ω TJ=125°C L=100µH 80 tr and tf (ns) 60 tr 40 20 td(on) 0 0 60 90 120 150 180 210 240 270 60 90 ID, Drain Current (A) 36 VDS=800V RG=0.8Ω TJ=125°C L=100µH 20 16 Switching Energy (mJ) Switching Energy (mJ) 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 24 Eon Eoff 12 8 4 0 VDS=800V ID=171A TJ=125°C L=100µH 30 24 Eoff 18 Eon 12 Eoff 6 60 90 120 150 180 210 240 270 0 ID, Drain Current (A) 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 175 150 Frequency (kHz) tf ZCS 125 Hard switching 100 VDS=800V D=50% RG=0.8Ω TJ=125°C TC=75°C 75 50 25 0 40 60 80 100 120 140 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 160 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120UM70DAG Rev 2 October, 2012 td(on) and td(off) (ns) 300 APTM120UM70DAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7–7 APTM120UM70DAG Rev 2 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.