APTM120UM70DAG-Rev2.pdf

APTM120UM70DAG
Single switch
with Series diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 70m typ @ Tj = 25°C
ID = 171A @ Tc = 25°C
Application
 Zero Current Switching resonant mode
SK
S
D
G
Features
 Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- M5 power connectors
 High level of integration
 AlN substrate for improved thermal performance
DK
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
171
126
684
±30
80
5000
24
50
3200
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM120UM70DAG Rev 2 October, 2012
Symbol
VDSS
APTM120UM70DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1200V
Tj = 25°C
VGS = 0V,VDS = 1000V
Tj = 125°C
VGS = 10V, ID = 85.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Typ
70
3
Max
1.5
6
80
5
±600
Unit
Max
Unit
mA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 171A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
43.5
6.6
1.2
nF
1650
nC
192
1074
20
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 171A
RG =0.8
17
ns
245
62
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8Ω
7.6
mJ
6.9
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 171A, RG = 0.8Ω
13.8
mJ
8.5
Series diode ratings and characteristics
IRM
IF
VF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
Min
1200
Tj = 25°C
Tj = 125°C
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 240A
VR = 800V
di/dt = 800A/µs
Tj = 125°C
Tj = 25°C
400
Tj = 125°C
470
Tj = 25°C
4.8
Tj = 125°C
16
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Max
750
1000
240
2
2.3
1.8
Tc = 70°C
IF = 240A
IF = 480A
IF = 240A
Typ
Unit
V
µA
A
2.5
V
ns
µC
2–7
APTM120UM70DAG Rev 2 October, 2012
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
APTM120UM70DAG
Thermal and package characteristics
Symbol Characteristic
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Min
Transistor
Series diode
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
4000
-40
-40
-40
3
2
Typ
Max
0.025
0.23
Unit
°C/W
V
150
125
100
5
3.5
300
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3–7
APTM120UM70DAG Rev 2 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM120UM70DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
VGS=15, 10V
360
300
6V
240
5.5V
180
120
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
420
7V
ID, Drain Current (A)
5V
60
360
300
240
TJ=-55°C
180
120
TJ=25°C
60
4.5V
0
0
5
10
15
20
25
TJ=125°C
0
30
0
1.2
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
180
Normalized to
VGS=10V @ 85.5A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
0.9
0.8
135
90
45
0
0
60
120
180
240
300
360
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM120UM70DAG Rev 2 October, 2012
ID, Drain Current (A)
420
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=85.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
limited by RDSon
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
100
1ms
10ms
10
0.6
Single pulse
TJ=150°C
TC=25°C
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
0
10
20
30
40
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=171A
TJ=25°C
12
10
VDS=240V
VDS=600V
8
VDS=960V
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
420
840
1260
1680
2100
Gate Charge (nC)
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5–7
APTM120UM70DAG Rev 2 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120UM70DAG
APTM120UM70DAG
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
250
200
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
150
100
50
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
80
tr and tf (ns)
60
tr
40
20
td(on)
0
0
60
90
120 150 180 210 240 270
60
90
ID, Drain Current (A)
36
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
20
16
Switching Energy (mJ)
Switching Energy (mJ)
120 150 180 210 240 270
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
24
Eon
Eoff
12
8
4
0
VDS=800V
ID=171A
TJ=125°C
L=100µH
30
24
Eoff
18
Eon
12
Eoff
6
60
90
120 150 180 210 240 270
0
ID, Drain Current (A)
1
2
3
4
5
6
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
175
150
Frequency (kHz)
tf
ZCS
125
Hard
switching
100
VDS=800V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
75
50
25
0
40
60
80
100 120 140
ID, Drain Current (A)
TJ=150°C
100
TJ=25°C
10
1
160
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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APTM120UM70DAG Rev 2 October, 2012
td(on) and td(off) (ns)
300
APTM120UM70DAG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
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that Seller was negligent regarding the design or manufacture of the goods.
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APTM120UM70DAG Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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