APTM120UM70FAG Single switch MOSFET Power Module S G D DK Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit Drain - Source Breakdown Voltage 1200 V VDSS Tc = 25°C 171 ID Continuous Drain Current A Tc = 80°C 126 IDM Pulsed Drain current 684 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 80 m PD Maximum Power Dissipation Tc = 25°C 5000 W IAR Avalanche current (repetitive and non repetitive) 24 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3200 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM120UM70FAG Rev 2 October, 2012 SK VDSS = 1200V RDSon = 70m typ @ Tj = 25°C ID = 171A @ Tc = 25°C APTM120UM70FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = ±30 V, VDS = 0V Typ 70 3 Max 1.5 6 80 5 ±600 Unit Max Unit mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 171A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 43.5 6.6 1.2 nF 1650 nC 192 1074 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 171A RG =0.8 17 ns 245 62 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 171A, RG = 0.8Ω 7.6 mJ 6.9 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 171A, RG = 0.8Ω 13.8 mJ 8.5 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 171 126 1.3 18 375 Tj = 125°C 860 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 171A IS = - 171A VR = 600V diS/dt = 600A/µs Tj = 25°C 12 Tj = 125°C 54 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 171A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2–7 APTM120UM70FAG Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM120UM70FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.025 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM120UM70FAG Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120UM70FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.03 0.025 0.9 0.02 0.7 0.015 0.5 0.01 0.3 0.005 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 VGS=15, 10V 360 300 6V 240 5.5V 180 120 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7V ID, Drain Current (A) 5V 60 360 300 240 TJ=-55°C 180 120 TJ=25°C 60 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 180 Normalized to VGS=10V @ 85.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 0.9 135 90 45 0.8 0 0 60 120 180 240 300 360 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM120UM70FAG Rev 2 October, 2012 ID, Drain Current (A) 420 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=85.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 1ms 10ms 10 0.6 Single pulse TJ=150°C TC=25°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 0 10 20 30 40 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=171A TJ=25°C 12 10 VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 420 840 1260 1680 2100 Gate Charge (nC) www.microsemi.com 5–7 APTM120UM70FAG Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120UM70FAG APTM120UM70FAG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 250 200 VDS=800V RG=0.8Ω TJ=125°C L=100µH 150 100 50 VDS=800V RG=0.8Ω TJ=125°C L=100µH 80 tr and tf (ns) 60 tr 40 20 td(on) 0 0 60 90 120 150 180 210 240 270 60 90 ID, Drain Current (A) 36 VDS=800V RG=0.8Ω TJ=125°C L=100µH 20 16 Switching Energy (mJ) Switching Energy (mJ) 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 24 Eon Eoff 12 8 4 0 VDS=800V ID=171A TJ=125°C L=100µH 30 24 Eoff 18 Eon 12 Eoff 6 60 90 120 150 180 210 240 270 0 ID, Drain Current (A) 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 150 IDR, Reverse Drain Current (A) 175 Frequency (kHz) tf ZVS 125 Hard switching 100 ZCS VDS=800V D=50% RG=0.8Ω TJ=125°C TC=75°C 75 50 25 0 40 60 80 100 120 140 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 160 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM120UM70FAG Rev 2 October, 2012 td(on) and td(off) (ns) 300 APTM120UM70FAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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