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1N4148UR-1
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, and
JANTXV
Glass MELF Switching Diode
Qualified per MIL-PRF-19500/116
DESCRIPTION
This popular 1N4148UR-1 JEDEC registered switching/signal diode features internal
metallurgical bonded construction for military grade products per MIL-PRF-19500/116.
Previously listed as a CDLL4148 this small low capacitance diode, with very fast switching
speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be
used in a variety of very high speed applications including switchers, detectors, transient
OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi
also offers a variety of other switching/signal diodes.
DO-213AA
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
Surface mount equivalent of popular JEDEC registered 1N4148 number.
•
Hermetically sealed glass construction.
Also available in:
•
Metallurgically bonded.
•
Double plug construction.
•
Very low capacitance.
•
Very fast switching speeds with minimal reverse recovery times.
UB package
•
JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116.
(surface mount)
1N4148UB
•
RoHS compliant version available (commercial grade only).
DO-35 package
(axial-leaded)
1N4148-1
(See part nomenclature for all available options.)
UB2 package
(2-Pin surface mount)
1N4148UB2
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High frequency data lines.
Small size for high density mounting using the surface mount method (see package illustration).
RS-232 & RS–422 interface networks.
Ethernet 10 Base T.
Low capacitance steering or blocking.
LAN.
Computers.
UBC package
(Ceramic Lid surface mount)
1N4148UBC
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Symbol
TJ & TSTG
RӨJA
RӨJEC
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
(2)
Thermal Resistance Junction-to-Endcap
Maximum Breakdown Voltage
Working Peak Reverse Voltage
(3)
Average Rectified Current @ TA = 75 ºC
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
V(BR)
VRWM
IO
IFSM
Value
-65 to +175
325
100
100
Unit
o
C
o
C/W
o
C/W
V
75
200
2
V
mA
A (pk)
NOTES: 1. TA = +75°C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); RӨJA with a defined PCB
thermal resistance condition included, is measured at IO = 200 mA dc.
2. See Figure 2 for thermal impedance curves.
3. See Figure 1 for derating.
T4-LDS-0281-1, Rev. 1 (121567)
©2012 Microsemi Corporation
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Page 1 of 4
1N4148UR-1
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
•
CASE: Hermetically sealed glass case package.
TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode end is banded.
MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting
surface system should be selected to provide a suitable match with this device.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 0.2 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N4148 UR -1 (e3)
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
See 1N6642US for JANS level
Blank = Commercial grade
Metallurgically Bonded
JEDEC type number
(see Electrical Characteristics
table)
MELF Surface Mount
SYMBOLS & DEFINITIONS
Definition
Symbol
IR
IO
trr
VF
VR
VRWM
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted
FORWARD FORWARD REVERSE FORWARD
VOLTAGE VOLTAGE RECOVERY RECOVERY
VF2 @
TIME
VF1 @
TIME
trr
tfr
IF=10 mA IF=100 mA
(Note 1)
(Note 2)
V
V
ns
ns
0.8
1.2
5
20
NOTE 1: IF = IR = 10 mA, RL = 100 Ohms.
NOTE 2: IF = 50 mA.
T4-LDS-0281-1, Rev. 1 (121567)
REVERSE
CURRENT
IR4
@ 75 V
TA=150oC
µA
CAPACITANCE
C
(Note 3)
CAPACITANCE
C
(Note 4)
µA
REVERSE
CURRENT
IR3
@ 20 V
TA=150oC
µA
pF
pF
0.5
35
75
4.0
2.8
REVERSE
CURRENT
IR1 @ 20 V
REVERSE
CURRENT
IR2 @ 75 V
nA
25
NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk).
NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk).
©2012 Microsemi Corporation
Page 2 of 4
1N4148UR-1
DC Operation Maximum Io Rating (mA)
GRAPHS
TA (ºC) (Ambient)
Theta (°C/W)
FIGURE 1 – Temperature – Current Derating
Time (s)
FIGURE 2 – Thermal Impedance
T4-LDS-0281-1, Rev. 1 (121567)
©2012 Microsemi Corporation
Page 3 of 4
1N4148UR-1
PACKAGE DIMENSIONS
DIM
BD
BL
ECT
S
INCH
MIN
MAX
0.063 0.067
0.130 0.146
0.016 0.022
.001 min
MILLIMETERS
MIN
MAX
1.60
1.70
3.30
3.71
0.41
0.56
0.03 min
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
A
B
C
T4-LDS-0281-1, Rev. 1 (121567)
©2012 Microsemi Corporation
INCH
.200
.055
.080
mm
5.08
1.40
2.03
Page 4 of 4