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ARF449A(G)
ARF449B(G)
D
G
S
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-247
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
90W
120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Specified 150 Volt, 81.36 MHz Characteristics:
•
Output Power = 90 Watts.
•
Gain = 13dB (Class C)
•
Efficiency = 75%
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF449A/449B(G)
VDSS
Drain-Source Voltage
450
VDGO
Drain-Gate Voltage
450
ID
UNIT
Volts
Continuous Drain Current @ TC = 25°C
9
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
165
Watts
Junction to Case
0.76
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VDS(ON)
IDSS
IGSS
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
450
On State Drain Voltage
1
TYP
MAX
Volts
(ID(ON) = 5A, VGS = 10V)
4
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
gfs
Forward Transconductance (VDS = 25V, ID = 5A)
3
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
2
5.8
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
mhos
5
Volts
7-2003
BVDSS
Characteristic / Test Conditions
050-4909 Rev C
Symbol
ARF449A/449B(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
TYP
MAX
980
1200
VDS = 150V
87
120
f = 1 MHz
25
40
VGS = 15V
5
10
VDD = 0.5 VDSS
3.1
7
ID = ID[Cont.] @ 25°C
15
25
RG = 1.6ý
3
7
MAX
VGS = 0V
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 81.36 MHz
12
13
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 20:1
VDD = 150V
Pout = 90W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3000
30
Class C
VDD = 150V
25
CAPACITANCE (pf)
GAIN (dB)
20
15
10
Ciss
1000
Pout = 150W
500
Coss
100
Crss
50
5
ID, DRAIN CURRENT (AMPERES)
050-4909 Rev C
7-2003
16
12
10
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
50
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
0
30
OPERATION HERE
LIMITED BY RDS (ON)
10µS
100µS
10
1mS
5
10mS
1
100mS
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
ARF449A/449B(G)
25
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.7
20
VGS=8, 10 & 15V
6.5V
15
6V
10
5.5V
5
5V
4.5V
0.6
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
GPS, COMMON SOURCE AMPLIFIER GAIN
(dB)
160
POUT, POWER OUT (WATTS)
Class C
VDD = 150V
f = 81.36 MHz
120
80
40
0
0
0
2
4
6
8
10
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
14
Class C
VDD = 150V
12
f = 81.36 MHz
10
8
6
0
40
80
120
160
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.8
0.2
0.1
0.1
0.05
0.05
0.02
Note:
0.01
PDM
SINGLE PULSE
0.01
t1
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
Z in (Ω)
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35 + j 1.1
0.56 + j 2.5
0.90 + j 3.8
Z OL (Ω)
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
Z in - gate shunted by 25Ω
Z OL - conjugate of optimum load impedance for 150W at 150V
7-2003
0.001
10-5
050-4909 Rev C
Z JC, THERMAL IMPEDANCE (°C/W)
θ
D=0.5
ARF449A/449B(G)
81.36 MHz Test Circuit
Parts List
C1 -- 680pF Unelco
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 0.8" #18 AWG into hairpin ~19nH
L2-L3 -- 3t #18 AWG .25" ID ~50nH
L4 -- 10t #18 AWG .25" ID ~470nH
L5 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 4:1 Broadband Transformer
L5
+
C6
150V
L4
C5
L2
L1
RF Input
-
C7
L3
C3
DUT
RF Output
C4
T1
C1
C2
R1
81.36 MHz Test Circuit
TO-247 Package Outline
e3 100% Sn Plated
Top View
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Source
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
7-2003
Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
050-4909 Rev C
5.38 (.212)
6.20 (.244)
5.45 (.215) BSC
2-Plcs.
Device
ARF449A
ARF449B
Gate
Drain
Source
Source
Drain
Gate