APTM100H46FT3G-Rev2.pdf

APTM100H46FT3G
VDSS = 1000V
RDSon = 460m typ @ Tj = 25°C
ID = 19A @ Tc = 25°C
Full bridge
MOSFET Power Module
Application




Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features


28 27 26 25



20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
Benefits




10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …



Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1000
19
14
120
±30
552
357
16
Unit
V
A
V
m
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM100H46FT3G – Rev 2 October, 2012
Symbol
VDSS
APTM100H46FT3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 1000V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 16A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
460
4
Max
250
1000
552
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 16A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
6800
715
92
pF
260
nC
46
125
36
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 16A
RG = 2.2
37
ns
140
35
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 16A
IS = - 16A
VR = 100V
diS/dt = 100A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.3
3.5
Max
19
14
1
25
290
600
Unit
A
V
V/ns
ns
µC
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2–6
APTM100H46FT3G – Rev 2 October, 2012
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS  - 16A
di/dt  1000A/µs
VDD  667V
Tj  125°C
APTM100H46FT3G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.35
150
125
100
3
110
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT 
Typ
50
5
3952
4
Max
Unit
k
%
K
%
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–6
APTM100H46FT3G – Rev 2 October, 2012
SP3 Package outline (dimensions in mm)
APTM100H46FT3G
Typical Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
50
30
TJ=125°C
ID, Drain Current (A)
TJ=25°C
30
TJ=125°C
20
10
0
25
VGS=6, 7, 8 &9V
20
15
5V
10
5
4.5V
0
0
5
10
15
20
0
5
VDS, Drain to Source Voltage (V)
VGS=10V
ID=16A
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
20
25
30
30
2
1.5
1
0.5
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
25
20
TJ=125°C
15
10
TJ=25°C
5
0
25
50
75
100
125
150
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (°C)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
100000
12
VDS=200V
ID=16A
TJ=25°C
10
C, Capacitance (pF)
VGS, Gate to Source Voltage
15
Transfert Characteristics
Normalized RDSon vs. Temperature
3
2.5
10
VDS, Drain to Source Voltage (V)
VDS=500V
8
6
VDS=800V
4
2
Ciss
10000
1000
Coss
100
Crss
10
1
0
0
40
80
120
160
200
240
280
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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4–6
APTM100H46FT3G – Rev 2 October, 2012
ID, Drain Current (A)
VGS=10V
40
APTM100H46FT3G
ISD, Reverse Drain Current (A)
Drain Current vs Source to Drain Voltage
50
40
TJ=125°C
30
20
10
TJ=25°C
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.3
0.2
0.7
0.5
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5–6
APTM100H46FT3G – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.4
APTM100H46FT3G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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6–6
APTM100H46FT3G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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