APTM100H46FT3G VDSS = 1000V RDSon = 460m typ @ Tj = 25°C ID = 19A @ Tc = 25°C Full bridge MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration Benefits 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 19 14 120 ±30 552 357 16 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM100H46FT3G – Rev 2 October, 2012 Symbol VDSS APTM100H46FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 460 4 Max 250 1000 552 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 16A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 6800 715 92 pF 260 nC 46 125 36 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 16A RG = 2.2 37 ns 140 35 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 16A IS = - 16A VR = 100V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 1.3 3.5 Max 19 14 1 25 290 600 Unit A V V/ns ns µC www.microsemi.com 2–6 APTM100H46FT3G – Rev 2 October, 2012 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 16A di/dt 1000A/µs VDD 667V Tj 125°C APTM100H46FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.35 150 125 100 3 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM100H46FT3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTM100H46FT3G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 50 30 TJ=125°C ID, Drain Current (A) TJ=25°C 30 TJ=125°C 20 10 0 25 VGS=6, 7, 8 &9V 20 15 5V 10 5 4.5V 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) VGS=10V ID=16A ID, Drain Current (A) RDSon, Drain to Source ON resistance 20 25 30 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 25 20 TJ=125°C 15 10 TJ=25°C 5 0 25 50 75 100 125 150 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 12 VDS=200V ID=16A TJ=25°C 10 C, Capacitance (pF) VGS, Gate to Source Voltage 15 Transfert Characteristics Normalized RDSon vs. Temperature 3 2.5 10 VDS, Drain to Source Voltage (V) VDS=500V 8 6 VDS=800V 4 2 Ciss 10000 1000 Coss 100 Crss 10 1 0 0 40 80 120 160 200 240 280 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4–6 APTM100H46FT3G – Rev 2 October, 2012 ID, Drain Current (A) VGS=10V 40 APTM100H46FT3G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 50 40 TJ=125°C 30 20 10 TJ=25°C 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.3 0.2 0.7 0.5 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5–6 APTM100H46FT3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.4 APTM100H46FT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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