APTM50AM17FG Phase leg MOSFET Power Module VDSS = 500V RDSon = 17m typ @ Tj = 25°C ID = 180A @ Tc = 25°C Application VBUS Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control OUT Features S1 Q2 G2 S2 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 180 135 720 ±30 20 1250 51 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50AM17FG– Rev 3 October, 2012 Symbol VDSS APTM50AM17FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 17 3 Max 400 2000 20 5 ±200 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 180A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 28 5.6 0.36 nF 560 nC 160 280 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 180A RG = 0.5 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 4140 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5Ω 6224 µJ 3380 µJ 4052 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 180A IS = -180A VR = 333V diS/dt = 400A/µs Tj = 25°C Tj = 125°C Tj = 25°C 10.4 Tj = 125°C 38.4 Max 180 135 1.3 15 270 540 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150°C IS - 180A di/dt 700A/µs www.microsemi.com 2–7 APTM50AM17FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM50AM17FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM50AM17FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50AM17FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 600 7V 400 6.5V 6V 200 5.5V 5V 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 400 300 TJ=25°C 200 100 TJ=125°C TJ=-55°C 0 0 25 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 500 180 1.05 ID, DC Drain Current (A) Normalized to VGS=10V @ 90A VGS=10V 1 VGS=20V 0.95 0.9 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50AM17FG– Rev 3 October, 2012 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 600 800 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 limited by RDSon 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us 100 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 100 ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) VGS=10V ID=90A 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=180A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) 5–7 APTM50AM17FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50AM17FG APTM50AM17FG Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=0.5Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=0.5Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) 100 80 tr 60 40 20 20 10 0 40 80 120 160 200 240 40 280 ID, Drain Current (A) 120 160 200 240 ID, Drain Current (A) 280 20 VDS=333V RG=0.5Ω TJ=125°C L=100µH 10 8 Switching Energy (mJ) Switching Energy (mJ) 80 Switching Energy vs Gate Resistance Switching Energy vs Current 12 Eon 6 Eoff 4 2 VDS=333V ID=180A TJ=125°C L=100µH 16 12 Eoff Eon 8 Eoff 4 0 0 40 80 120 160 200 240 0 280 ID, Drain Current (A) 350 300 ZCS 250 VDS=333V D=50% RG=0.5Ω TJ=125°C TC=75°C 200 150 Hard switching 100 ZVS 50 0 20 40 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 400 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) 450 Frequency (kHz) tf 60 80 100 120 140 160 ID, Drain Current (A) www.microsemi.com Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 6–7 APTM50AM17FG– Rev 3 October, 2012 td(on) and td(off) (ns) Delay Times vs Current 80 APTM50AM17FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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