APTM50AM17FG-Rev3.pdf

APTM50AM17FG
Phase leg
MOSFET Power Module
VDSS = 500V
RDSon = 17m typ @ Tj = 25°C
ID = 180A @ Tc = 25°C
Application
VBUS




Q1
G1
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
OUT
Features
S1
Q2

G2
S2
0/VBUS



Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits





Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
180
135
720
±30
20
1250
51
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM50AM17FG– Rev 3 October, 2012
Symbol
VDSS
APTM50AM17FG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 500V
Tj = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 90A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Typ
17
3
Max
400
2000
20
5
±200
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 180A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
28
5.6
0.36
nF
560
nC
160
280
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 180A
RG = 0.5
38
ns
75
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
4140
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
6224
µJ
3380
µJ
4052
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 180A
IS = -180A
VR = 333V
diS/dt = 400A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
10.4
Tj = 125°C
38.4
Max
180
135
1.3
15
270
540
Unit
A
V
V/ns
ns
µC
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR  VDSS
Tj  150°C
IS  - 180A di/dt  700A/µs
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2–7
APTM50AM17FG– Rev 3 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTM50AM17FG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Torque
Mounting torque
4000
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.1
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3–7
APTM50AM17FG– Rev 3 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM50AM17FG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10&15V
600
7V
400
6.5V
6V
200
5.5V
5V
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
400
300
TJ=25°C
200
100
TJ=125°C
TJ=-55°C
0
0
25
2
4
6
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
180
1.05
ID, DC Drain Current (A)
Normalized to
VGS=10V @ 90A
VGS=10V
1
VGS=20V
0.95
0.9
160
140
120
100
80
60
40
20
0
0
50
100
150
200
250
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
4–7
APTM50AM17FG– Rev 3 October, 2012
ID, Drain Current (A)
8V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
600
800
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50
75 100 125 150
Maximum Safe Operating Area
1000
1.2
limited by RDSon
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100 us
100
1 ms
Single pulse
TJ=150°C
TC=25°C
10
10 ms
100 ms
1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
10000
Coss
1000
Crss
100
10
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
VGS=10V
ID=90A
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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14
ID=180A
TJ=25°C
12
VDS=100V
VDS=250V
10
VDS=400V
8
6
4
2
0
0
100 200 300 400 500 600 700
Gate Charge (nC)
5–7
APTM50AM17FG– Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM17FG
APTM50AM17FG
Rise and Fall times vs Current
160
70
140
td(off)
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
60
50
40
30
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
20
10
0
40
80
120
160
200
240
40
280
ID, Drain Current (A)
120 160 200 240
ID, Drain Current (A)
280
20
VDS=333V
RG=0.5Ω
TJ=125°C
L=100µH
10
8
Switching Energy (mJ)
Switching Energy (mJ)
80
Switching Energy vs Gate Resistance
Switching Energy vs Current
12
Eon
6
Eoff
4
2
VDS=333V
ID=180A
TJ=125°C
L=100µH
16
12
Eoff
Eon
8
Eoff
4
0
0
40
80
120
160
200
240
0
280
ID, Drain Current (A)
350
300
ZCS
250
VDS=333V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
200
150
Hard
switching
100
ZVS
50
0
20
40
IDR, Reverse Drain Current (A)
Operating Frequency vs Drain Current
400
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
450
Frequency (kHz)
tf
60 80 100 120 140 160
ID, Drain Current (A)
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Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
6–7
APTM50AM17FG– Rev 3 October, 2012
td(on) and td(off) (ns)
Delay Times vs Current
80
APTM50AM17FG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM50AM17FG– Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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