APTM50AM24SG-Rev4.pdf

APTM50AM24SG
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 24mΩ typ @ Tj = 25°C
ID = 150A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
Q1
Features
G1
OUT
•
0/VBUS
•
•
S1
Q2
G2
S2
•
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
•
•
•
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
150
110
600
±30
28
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM50AM24SG – Rev 4 November, 2013
Symbol
VDSS
APTM50AM24SG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 500V
VGS = 10V, ID = 75A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Min
Typ
24
3
Max
500
28
5
±600
Unit
µA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
19.6
4.2
0.3
nF
434
VGS = 10V
VBus = 250V
ID = 150A
120
nC
216
10
17
50
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
RG = 0.8Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 150A, RG = 0.8Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 150A, RG = 0.8Ω
ns
41
1.9
mJ
1.5
3.3
mJ
1.7
0.1
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
trr
Qrr
Er
RthJC
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
Tc = 80°C
Tj = 25°C
IF = 200A
Diode Forward Voltage
VGE = 0V
Tj = 150°C
Tj = 25°C
Reverse Recovery Time
Tj = 150°C
IF = 200A
Tj = 25°C
Reverse Recovery Charge
VR = 300V
di/dt =2800A/µs Tj = 150°C
Tj = 25°C
Reverse Recovery Energy
Tj = 150°C
Junction to Case Thermal Resistance
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Min
600
Typ
150
200
1.6
1.5
125
220
9.4
2
V
ns
µC
19.8
2.2
mJ
4.8
0.39
°C/W
2–7
APTM50AM24SG – Rev 4 November, 2013
Symbol
VRRM
IRM
IF
APTM50AM24SG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR = 600V
DC Forward Current
IF = 120A
IF = 240A
Diode Forward Voltage
IF = 120A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 120A
VR = 400V
di/dt = 400A/µs
Min
600
Typ
Max
350
Tc = 70°C
120
1.6
1.9
1.4
130
170
440
1840
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Junction to Case Thermal Resistance
Unit
V
µA
A
1.8
V
ns
nC
0.46
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To heatsink
M6
Mounting torque
For terminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–7
APTM50AM24SG – Rev 4 November, 2013
SP6 Package outline (dimensions in mm)
APTM50AM24SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
360
600
360
7V
6.5V
240
6V
120
5.5V
0
0
5
10
15
20
VDS > I D(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
300
240
180
120
TJ=25°C
TJ=125°C
60
0
25
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 75A
1.15
VGS=10V
1.10
VGS=20V
1.05
1.00
0.95
0.90
0
60
120
180
240
8
DC Drain Current vs Case Temperature
160
1.20
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
RDS (on) vs Drain Current
1
2
3
4
5
6
7
VGS , Gate to Source Voltage (V)
300
360
ID, Drain Current (A)
120
80
40
0
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM50AM24SG – Rev 4 November, 2013
ID, Drain Current (A)
480
7.5V
ID, Drain Current (A)
8V
VGS=10&15V
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS(on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=75A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
75
1000
1.0
0.9
0.8
0.7
0.6
25
50
75
100
125
100
limited by RDSon
1ms
Single pulse
TJ =150°C
TC=25°C
10
1
100
10
10
20
30
40
VGS , Gate to Source Voltage (V)
Crss
0
10
100
1000
VDS , Drain to Source Voltage (V)
Coss
1000
10ms
1
150
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
100µs
limited by RDSon
TC, Case Temperature (°C)
C, Capacitance (pF)
50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
50
VDS , Drain to Source Voltage (V)
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Gate Charge vs Gate to Source Voltage
14
VDS=100V
ID=150A
12
TJ =25°C
VDS=250V
10
VDS=400V
8
6
4
2
0
0
100
200
300
400
500
600
Gate Charge (nC)
5–7
APTM50AM24SG – Rev 4 November, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM50AM24SG
APTM50AM24SG
Rise and Fall times vs Current
Delay Times vs Current
80
60
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
60
td(off)
40
t r and tf (ns)
td(on) and t d(off) (ns)
50
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
30
20
td(on)
tf
40
20
tr
10
0
0
30
80
130
180
230
30
280
80
ID, Drain Current (A)
180
230
280
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
7
VDS=333V
R G =0.8Ω
TJ=1 25 °C
L=100µH
6
5
Eon
Switching Energy (mJ)
Switching Energy (mJ)
130
4
3
Eoff
2
1
VDS=333V
I D=150A
TJ=1 25 °C
L=100µH
6
Eon
4
Eoff
2
0
30
80
130
180
230
280
ID, Drain Current (A)
0
2
4
6
8
10
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
600
ZVS
ZCS
400
VDS=333V
D=50%
R G =0.8Ω
TJ=1 25 °C
TC =75 °C
300
200
100
Hard
switching
0
40
70
100
130
ID, Drain Current (A)
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6–7
APTM50AM24SG – Rev 4 November, 2013
Frequency (kHz)
500
APTM50AM24SG
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM50AM24SG – Rev 4 November, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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