APTM50HM35FG Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 35m typ @ Tj = 25°C ID = 99A @ Tc = 25°C Application VBUS Q1 Q3 S1 OUT2 G3 OUT1 G1 S3 Q2 Q4 Features G4 G2 S4 S2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 99 74 396 ±30 39 781 51 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50HM35FG– Rev 3 October, 2012 APTM50HM35FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 35 3 Max 200 1000 39 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 99A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 14 2.8 0.2 nF 280 nC 80 140 21 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A RG = 1 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 2070 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 3112 µJ 1690 µJ 2026 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 99 74 1.3 15 270 Tj = 125°C 540 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 99A IS = - 99A VR = 333V diS/dt = 200A/µs Tj = 25°C 5.2 Tj = 125°C 19.2 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 700A/µs VR VDSS Tj 150°C IS - 99A www.microsemi.com 2–7 APTM50HM35FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM50HM35FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.16 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM50HM35FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50HM35FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.05 0.02 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 300 7V 200 6.5V 6V 100 5.5V 5V 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) ID, DC Drain Current (A) VGS=20V 0.95 0.9 40 60 80 50 TJ=125°C TJ=-55°C 2 4 6 8 DC Drain Current vs Case Temperature 1 20 TJ=25°C 100 VGS, Gate to Source Voltage (V) VGS=10V 0 150 0 25 Normalized to VGS=10V @ 49.5A 1.05 200 0 RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 100 120 ID, Drain Current (A) www.microsemi.com 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50HM35FG– Rev 3 October, 2012 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 300 400 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 Single pulse TJ=150°C TC=25°C 10 ms 100 ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 www.microsemi.com 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID=49.5A 14 ID=99A TJ=25°C 12 VDS=100V VDS=250V 10 VDS=400V 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) 5–7 APTM50HM35FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature RDS(on), Drain to Source ON resistance (Normalized) APTM50HM35FG APTM50HM35FG Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=1Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=1Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) 100 80 tr 60 40 20 20 10 0 0 20 40 60 0 80 100 120 140 160 20 ID, Drain Current (A) 10 VDS=333V RG=1Ω TJ=125°C L=100µH 5 4 Eon 3 Switching Energy (mJ) Switching Energy (mJ) 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 2 1 VDS=333V ID=99A TJ=125°C L=100µH 8 6 Eoff Eon 4 Eoff 2 0 0 0 20 40 60 0 80 100 120 140 160 ID, Drain Current (A) Operating Frequency vs Drain Current 350 ZVS 300 250 IDR, Reverse Drain Current (A) 400 VDS=333V D=50% RG=1Ω TJ=125°C TC=75°C 200 ZCS 150 Hard switching 100 50 0 10 20 5 10 15 20 25 Gate Resistance (Ohms) 450 Frequency (kHz) tf 30 40 50 60 70 ID, Drain Current (A) 80 90 www.microsemi.com Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 6–7 APTM50HM35FG– Rev 3 October, 2012 td(on) and td(off) (ns) Delay Times vs Current 80 APTM50HM35FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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