APTM50HM65FT3G-Rev2.pdf

APTM50HM65FT3G
Full - Bridge
MOSFET Power Module
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
13 14
Q1
Q3
18
11
22
Features
 Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
 Internal thermistor for temperature monitoring
 High level of integration
7
19
10
23
Q2
8
Q4
26
4
27
3
29
30
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
32
13
2
3
4
7
8
VDSS = 500V
RDSon = 65m typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
 RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
51
38
204
±30
78
390
51
50
3000
Unit
V
A
October, 2012
ID
Parameter
Drain - Source Breakdown Voltage
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM50HM65FT3G – Rev 2
Symbol
VDSS
APTM50HM65FT3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 25.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
65
3
Max
100
500
78
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3
21
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
7000
1400
90
pF
nC
40
70
38
ns
75
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1035
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 51A, RG = 3Ω
1556
µJ
845
µJ
1013
Source - Drain diode ratings and characteristics
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Typ
Tj = 25°C
Max
51
38
1.3
15
270
Tj = 125°C
540
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 51A
IS = - 51A
VR = 333V
diS/dt = 100A/µs
Tj = 25°C
2.6
Tj = 125°C
9.6
Unit
A
V
V/ns
ns
µC
October, 2012
trr
Test Conditions
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS  - 51A
di/dt  700A/µs
VR  VDSS
Tj  150°C
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2–6
APTM50HM65FT3G – Rev 2
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTM50HM65FT3G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.32
150
125
100
3
110
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3–6
APTM50HM65FT3G – Rev 2
October, 2012
SP3 Package outline (dimensions in mm)
APTM50HM65FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10&15V
160
7V
120
6.5V
80
6V
40
5.5V
5V
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
100
75
TJ=25°C
50
25
TJ=125°C
TJ=-55°C
0
0
25
2
4
6
8
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.1
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
125
60
1.05
ID, DC Drain Current (A)
Normalized to
VGS=10V @ 25.5A
VGS=10V
1
VGS=20V
0.95
0.9
50
40
30
20
10
0
10
20
30
40
50
60
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
October, 2012
0
4–6
APTM50HM65FT3G – Rev 2
ID, Drain Current (A)
8V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
150
200
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50
75 100 125 150
Maximum Safe Operating Area
1000
1.2
1.1
ID, Drain Current (A)
1.0
0.9
0.8
0.7
100 us
limited by RDSon
100
1 ms
10
10 ms
Single pulse
TJ=150°C
TC=25°C
1
100 ms
0.1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
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Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10
100
1000
VDS, Drain to Source Voltage (V)
14
VDS=100V
ID=51A
TJ=25°C
12
VDS=250V
10
VDS=400V
8
6
4
2
0
0
25
50
75
100 125 150 175
Gate Charge (nC)
October, 2012
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 25.5A
5–6
APTM50HM65FT3G – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50HM65FT3G
APTM50HM65FT3G
Rise and Fall times vs Current
160
70
140
td(off)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
60
50
40
30
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
20
10
0
10
20
30
40
50
60
70
10
80
20
ID, Drain Current (A)
70
80
5
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
2.5
2
Switching Energy (mJ)
Eon
1.5
Eoff
1
0.5
VDS=333V
ID=51A
TJ=125°C
L=100µH
4
3
Eoff
Eon
2
Eoff
1
0
0
10
20
30
40
50
60
70
0
80
5
10 15 20 25 30 35 40 45
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
400
350
ZVS
300
250
IDR, Reverse Drain Current (A)
450
VDS=333V
D=50%
RG=3Ω
TJ=125°C
TC=75°C
200
ZCS
150
100
hard
switching
50
0
10
15
20 25 30 35
ID, Drain Current (A)
40
45
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source to Drain Voltage (V)
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October, 2012
Switching Energy (mJ)
30
40
50
60
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
Frequency (kHz)
tf
6–6
APTM50HM65FT3G – Rev 2
td(on) and td(off) (ns)
Delay Times vs Current
80
APTM50HM65FT3G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–6
APTM50HM65FT3G – Rev 2
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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