APTM50HM75FT3G Full - Bridge MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 13 14 Q1 VDSS = 500V RDSon = 75m typ @ Tj = 25°C ID = 46A @ Tc = 25°C Q3 18 11 22 Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 7 19 10 23 Q2 8 Q4 26 4 27 3 29 30 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50HM75FT3G – Rev 2 October, 2012 Symbol VDSS APTM50HM75FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 75 3 Max 100 500 90 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 123 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5 18 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 5600 1200 90 pF nC 33 65 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 755 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 1241 µJ 726 µJ 846 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 46A IS = - 46A VR = 333V diS/dt = 100A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 1.9 Tj = 125°C 5.7 Max 46 34 1.3 15 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 46A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2–7 APTM50HM75FT3G – Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM50HM75FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.35 150 125 100 3 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM50HM75FT3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTM50HM75FT3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 ID, Drain Current (A) ID, Drain Current (A) 10 120 180 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 23A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 50 VGS=10V 1.10 1.05 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 80 100 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50HM75FT3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 1000 1.0 0.9 0.8 0.7 0.6 100 limited by R limited byDSon RDSon 10 100µs Single pulse TJ=150°C TC=25°C 1ms 10ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) C, Capacitance (pF) 25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 100000 0 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=46A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 www.microsemi.com 0 20 40 60 80 100 120 140 160 Gate Charge (nC) 5–7 APTM50HM75FT3G – Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75FT3G APTM50HM75FT3G Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 ID, Drain Current (A) VDS=333V RG=5Ω TJ=125°C L=100µH 2 1.5 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 1 30 4 Switching Energy (mJ) Switching Energy (mJ) 2.5 20 ID, Drain Current (A) Switching Energy vs Current 0.5 VDS=333V ID=46A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 Eoff 0.5 0 0 10 20 30 40 50 60 0 70 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=333V D=50% RG=5Ω TJ=125°C TC=75°C ZVS 300 ZCS 250 IDR, Reverse Drain Current (A) 350 200 150 100 hard switching 50 0 10 15 20 25 30 10 20 30 40 50 Gate Resistance (Ohms) 400 Frequency (kHz) tf 35 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM50HM75FT3G – Rev 2 October, 2012 td(on) and td(off) (ns) 100 APTM50HM75FT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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