APTM50HM75STG Full bridge Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR1A CR1B Q1 CR3B Q3 G3 G1 OUT1 OUT2 S1 Q2 S3 CR4A CR2A CR2B CR4B Q4 G4 G2 S4 S2 NTC1 VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C 0/VBU S NTC2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A October, 2013 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50HM75STG – Rev 6 Symbol VDSS APTM50HM75STG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 75 3 Max 100 500 90 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 5600 1200 90 pF 123 VGS = 10V VBus = 250V ID = 46A 33 nC 65 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5Ω 18 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 755 35 ns 87 77 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 1241 µJ 846 0.35 °C/W Max Unit V µA A Series diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 30A VR = 400V di/dt = 200A/µs Min 600 Typ 250 30 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 130 Tj = 125°C 700 Junction to Case Thermal Resistance 1.8 V ns nC 1.2 www.microsemi.com October, 2013 VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=600V DC Forward Current Tc = 70°C IF = 30A IF = 60A Diode Forward Voltage IF = 30A Tj = 125°C °C/W 2–7 APTM50HM75STG – Rev 6 Symbol VRRM IRM IF APTM50HM75STG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR = 600V DC Forward Current Tc = 70°C IF = 30A IF = 60A Diode Forward Voltage IF = 30A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 30A VR = 400V di/dt = 200A/µs Min 600 Typ Max 250 30 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 130 Tj = 125°C 700 Unit V µA A 1.8 V ns nC Junction to Case Thermal Resistance 1.2 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦⎥ ⎣⎢ See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM50HM75STG – Rev 6 October, 2013 SP4 Package outline (dimensions in mm) APTM50HM75STG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.9 0.35 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 120 180 8V VGS=10&15V 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V 80 60 40 10 15 20 TJ=125°C 0 25 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 23A 1.15 50 VGS=10V 1.10 1.05 VGS=20V 1.00 0.95 40 30 20 10 0.90 0 20 40 8 DC Drain Current vs Case Temperature 1.20 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance RDS (on) vs Drain Current 1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V) 60 80 100 ID, Drain Current (A) October, 2013 5 TJ=25°C 20 0 0 VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM50HM75STG – Rev 6 140 ID, Drain Current (A) ID, Drain Current (A) 160 APTM50HM75STG 1.1 1.0 0.9 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature RDS (on), Drain to Source ON resistance (Normalized) 2.5 VGS=10V I D=23A 2.0 1.5 1.0 0.5 25 100 125 150 Maximum Safe Operating Area 1000 ID, Drain Current (A) 1.0 0.9 0.8 0.7 100 10 0.6 25 50 75 100 125 limited by by RDSon limited RDSon Single pulse TJ =150°C TC=25°C 150 1 VGS , Gate to Source Voltage (V) Ciss Coss Crss 100 10 0 10 20 30 10ms 10 100 1000 VDS , Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 1000 1ms 1 TC, Case Temperature (°C) 10000 100µs 40 Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=46A 12 TJ =25°C VDS=250V 10 50 VDS , Drain to Source Voltage (V) VDS=400V 8 6 4 2 0 0 20 40 60 October, 2013 VGS(TH), Threshold Voltage (Normalized) 75 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) 50 80 100 120 140 160 Gate Charge (nC) www.microsemi.com 5–7 APTM50HM75STG – Rev 6 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 APTM50HM75STG Rise and Fall times vs Current Delay Times vs Current 100 120 td(off) t r and tf (ns) VDS=333V R G =5Ω TJ=1 25 °C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 ID, Drain Current (A) 30 40 50 60 70 Switching Energy vs Gate Resistance 4 2.5 VDS=333V R G =5Ω TJ=1 25 °C L=100µH 2 Eon 1.5 Eoff 1 0.5 VDS=333V I D=46A TJ=1 25 °C L=100µH 3.5 Switching Energy (mJ) 3 2.5 2 1.5 Eon 1 Eoff 0.5 0 0 10 20 30 40 50 60 0 70 ID, Drain Current (A) 300 ZCS 250 VDS=333V D=50% R G =5Ω TJ=1 25 °C TC =75 °C 200 150 100 hard switching 50 1000 IDR, Reverse Drain Current (A) 400 ZVS 20 30 40 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 350 10 0 Source to Drain Diode Forward Voltage 100 TJ=150°C 10 TJ =25°C 1 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 October, 2013 Switching Energy (mJ) 20 ID, Drain Current (A) Switching Energy vs Current Frequency (kHz) tf VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM50HM75STG – Rev 6 td(on) and t d(off) (ns) VDS=333V R G =5Ω TJ=1 25 °C L=100µH 100 80 APTM50HM75STG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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