APTM50HM75STG-Rev6.pdf

APTM50HM75STG
Full bridge
Series & parallel diodes
MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
CR3A
CR1A
CR1B
Q1
CR3B
Q3
G3
G1
OUT1 OUT2
S1
Q2
S3
CR4A
CR2A
CR2B
CR4B
Q4
G4
G2
S4
S2
NTC1
VDSS = 500V
RDSon = 75mΩ typ @ Tj = 25°C
ID = 46A @ Tc = 25°C
0/VBU S
NTC2
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
46
34
184
±30
90
357
46
50
2500
Unit
V
A
October, 2013
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM50HM75STG – Rev 6
Symbol
VDSS
APTM50HM75STG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 500V
VGS = 0V,VDS = 400V
VGS = 10V, ID = 23A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
75
3
Max
100
500
90
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
5600
1200
90
pF
123
VGS = 10V
VBus = 250V
ID = 46A
33
nC
65
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 46A
RG = 5Ω
18
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
755
35
ns
87
77
µJ
726
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 46A, RG = 5Ω
1241
µJ
846
0.35
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 30A
VR = 400V
di/dt = 200A/µs
Min
600
Typ
250
30
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
160
Tj = 25°C
130
Tj = 125°C
700
Junction to Case Thermal Resistance
1.8
V
ns
nC
1.2
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October, 2013
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
Tc = 70°C
IF = 30A
IF = 60A
Diode Forward Voltage
IF = 30A
Tj = 125°C
°C/W
2–7
APTM50HM75STG – Rev 6
Symbol
VRRM
IRM
IF
APTM50HM75STG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 600V
DC Forward Current
Tc = 70°C
IF = 30A
IF = 60A
Diode Forward Voltage
IF = 30A
Tj = 125°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 30A
VR = 400V
di/dt = 200A/µs
Min
600
Typ
Max
250
30
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
160
Tj = 25°C
130
Tj = 125°C
700
Unit
V
µA
A
1.8
V
ns
nC
Junction to Case Thermal Resistance
1.2
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
150
TJmax -25
125
100
4.7
160
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R 25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
exp⎢ B 25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦⎥
⎣⎢
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM50HM75STG – Rev 6
October, 2013
SP4 Package outline (dimensions in mm)
APTM50HM75STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.9
0.35
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
120
180
8V
VGS=10&15V
7.5V
120
100
7V
80
6.5V
60
40
6V
20
5.5V
80
60
40
10
15
20
TJ=125°C
0
25
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 23A
1.15
50
VGS=10V
1.10
1.05
VGS=20V
1.00
0.95
40
30
20
10
0.90
0
20
40
8
DC Drain Current vs Case Temperature
1.20
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
RDS (on) vs Drain Current
1
2
3
4
5
6
7
VGS , Gate to Source Voltage (V)
60
80
100
ID, Drain Current (A)
October, 2013
5
TJ=25°C
20
0
0
VDS > I D(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
0
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
4–7
APTM50HM75STG – Rev 6
140
ID, Drain Current (A)
ID, Drain Current (A)
160
APTM50HM75STG
1.1
1.0
0.9
25
50
75
100
125
150
TJ, Junction Temperature (°C)
ON resistance vs Temperature
RDS (on), Drain to Source ON resistance
(Normalized)
2.5
VGS=10V
I D=23A
2.0
1.5
1.0
0.5
25
100
125
150
Maximum Safe Operating Area
1000
ID, Drain Current (A)
1.0
0.9
0.8
0.7
100
10
0.6
25
50
75
100
125
limited
by by
RDSon
limited
RDSon
Single pulse
TJ =150°C
TC=25°C
150
1
VGS , Gate to Source Voltage (V)
Ciss
Coss
Crss
100
10
0
10
20
30
10ms
10
100
1000
VDS , Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
1000
1ms
1
TC, Case Temperature (°C)
10000
100µs
40
Gate Charge vs Gate to Source Voltage
14
VDS=100V
ID=46A
12
TJ =25°C
VDS=250V
10
50
VDS , Drain to Source Voltage (V)
VDS=400V
8
6
4
2
0
0
20
40
60
October, 2013
VGS(TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
C, Capacitance (pF)
50
80 100 120 140 160
Gate Charge (nC)
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5–7
APTM50HM75STG – Rev 6
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
APTM50HM75STG
Rise and Fall times vs Current
Delay Times vs Current
100
120
td(off)
t r and tf (ns)
VDS=333V
R G =5Ω
TJ=1 25 °C
L=100µH
60
40
td(on)
20
80
60
40
tr
20
0
0
10
20
30
40
50
60
70
10
ID, Drain Current (A)
30
40
50
60
70
Switching Energy vs Gate Resistance
4
2.5
VDS=333V
R G =5Ω
TJ=1 25 °C
L=100µH
2
Eon
1.5
Eoff
1
0.5
VDS=333V
I D=46A
TJ=1 25 °C
L=100µH
3.5
Switching Energy (mJ)
3
2.5
2
1.5
Eon
1
Eoff
0.5
0
0
10
20
30
40
50
60
0
70
ID, Drain Current (A)
300
ZCS
250
VDS=333V
D=50%
R G =5Ω
TJ=1 25 °C
TC =75 °C
200
150
100
hard
switching
50
1000
IDR, Reverse Drain Current (A)
400
ZVS
20
30
40
50
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
350
10
0
Source to Drain Diode Forward Voltage
100
TJ=150°C
10
TJ =25°C
1
10
15
20
25
30
35
40
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
October, 2013
Switching Energy (mJ)
20
ID, Drain Current (A)
Switching Energy vs Current
Frequency (kHz)
tf
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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6–7
APTM50HM75STG – Rev 6
td(on) and t d(off) (ns)
VDS=333V
R G =5Ω
TJ=1 25 °C
L=100µH
100
80
APTM50HM75STG
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–7
APTM50HM75STG – Rev 6
October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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