APTM100A13SG-Rev5.pdf

APTM100A13SG
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 130mΩ typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
Q1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1
OUT
S1
Q2
G2
0/VBUS
S2
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
65
49
240
±30
156
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM100A13SG – Rev 5 October, 2013
Symbol
VDSS
APTM100A13SG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Typ
130
3
Max
600
2
156
5
±450
Unit
µA
mA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
15.2
2.6
0.42
nF
562
VGS = 10V
VBus = 500V
ID = 65A
75
nC
363
9
9
50
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 65A
RG = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, RG = 0.5Ω
ns
24
2.13
mJ
0.46
4.4
mJ
0.57
0.1
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=1000V
DC Forward Current
IF = 120A
IF = 240A
Diode Forward Voltage
IF = 120A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 120A
VR = 667V
di/dt = 400A/µs
Min
1000
Typ
350
Tc = 100°C
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
1520
Tj = 125°C
7200
Junction to Case Thermal Resistance
2.5
V
ns
nC
0.46
www.microsemi.com
°C/W
2–7
APTM100A13SG – Rev 5 October, 2013
Symbol
VRRM
IRM
IF
APTM100A13SG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=1000V
DC Forward Current
IF = 120A
IF = 240A
Diode Forward Voltage
IF = 120A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 120A
VR = 667V
di/dt = 400A/µs
Min
1000
Typ
Max
350
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
Tj = 125°C
350
1520
7200
Tc = 100°C
Junction to Case Thermal Resistance
Unit
V
µA
A
2.5
V
ns
nC
0.46
°C/W
Max
Unit
V
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
Mounting torque
For terminals
Package Weight
M6
M5
Min
4000
-40
-40
-40
3
2
Typ
150
125
100
5
3.5
300
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM100A13SG – Rev 5 October, 2013
SP6 Package outline (dimensions in mm)
APTM100A13SG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
360
6.5V
120
6V
90
60
5.5V
30
5V
300
240
180
TJ=125°C
120
60
0
4
8
12
16
20
24
TJ=25°C
0
28
0
VGS=10V
1.2
VGS=20V
1.1
1
0.9
0.8
30
60
4
5
6
7
8
9 10
70
Normalized to
VGS=10V @ 32.5A
0
3
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
90
120
150
180
60
50
40
30
20
10
0
25
ID, Drain Current (A)
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
4–7
APTM100A13SG – Rev 5 October, 2013
0
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
7V
VGS=15&10V
150
ID, Drain Current (A)
ID, Drain Current (A)
180
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=32.5A
2.0
1.5
1.0
0.5
25
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
0.95
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.00
0.90
0.85
0.80
0.75
0.70
100µs
limited by RDSon
100
1ms
10
Single pulse
T J =150°C
T C=25°C
0.65
0.60
10ms
1
25
50
75
100
125
1
150
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
0
10
20
30
40
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
50
Gate Charge vs Gate to Source Voltage
14
VDS=200V
ID=65A
12
TJ =25°C
10
VDS=500V
8
VDS=800V
6
4
2
0
50
VDS , Drain to Source Voltage (V)
0
120 240 360 480 600 720 840
Gate Charge (nC)
www.microsemi.com
5–7
APTM100A13SG – Rev 5 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100A13SG
APTM100A13SG
Delay Times vs Current
Rise and Fall times vs Current
50
td(off)
50
40
40
tr and tf (ns)
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
30
20
td(on)
30
20
10
10
0
30
40
50
60
70
80
90 100
20
30
40 50 60 70 80
ID, Drain Current (A)
ID, Drain Current (A)
90 100
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
7
6
5
Switching Energy (mJ)
8
Switching Energy (mJ)
tr
0
20
Eon
4
3
2
Eoff
1
0
5
Eon
4
VDS=667V
ID=65A
TJ=125°C
L=100µH
3
2
Eoff
1
0
20
30
40
50
60
70
80
90 100
0
ID, Drain Current (A)
1
2
3
4
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
500
VDS=667V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
400
Frequency (kHz)
tf
VDS=667V
RG=0.5Ω
TJ=125°C
L=100µH
300
ZCS
200
Hard
switching
100
ZVS
0
10
20
30
40
50
ID, Drain Current (A)
TJ=150°C
100
TJ=25°C
10
1
60
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
6–7
APTM100A13SG – Rev 5 October, 2013
td(on) and td(off) (ns)
60
APTM100A13SG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
7–7
APTM100A13SG – Rev 5 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
Similar pages