APTM100AM90FG VDSS = 1000V RDSon = 90m typ @ Tj = 25°C ID = 78A @ Tc = 25°C Phase leg MOSFET Power Module Application VBUS Q1 G1 OUT Features S1 Q2 G2 S2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100AM90FG– Rev 3 October, 2012 Symbol VDSS APTM100AM90FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Typ 90 3 Max 400 2000 105 5 ±250 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 78A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 20.7 3.5 0.64 nF 744 nC 96 488 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A RG =1.2 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, RG = 1.2Ω 3.6 mJ 2.5 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, RG = 1.2Ω 5.7 mJ 3.1 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 78 59 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 78A IS = - 78A VR = 670V diS/dt = 400A/µs Tj = 25°C 14.4 Tj = 125°C 38.9 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 78A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2–7 APTM100AM90FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM100AM90FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.1 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM100AM90FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100AM90FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS=15, 10&8V 200 7V 160 6.5V 120 6V 80 5.5V 40 0 5 10 15 20 25 240 200 160 120 TJ=25°C 80 40 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 80 Normalized to VGS=10V @ 39A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100AM90FG– Rev 3 October, 2012 ID, Drain Current (A) 240 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=39A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 0.6 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=78A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 200 400 600 800 1000 Gate Charge (nC) www.microsemi.com 5–7 APTM100AM90FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100AM90FG APTM100AM90FG Delay Times vs Current Rise and Fall times vs Current 80 td(off) 160 VDS=670V RG=1.2Ω TJ=125°C L=100µH 120 80 0 40 tr 0 20 40 60 80 100 120 140 160 20 ID, Drain Current (A) 60 80 100 120 140 160 ID, Drain Current (A) 14 Eon VDS=670V RG=1.2Ω TJ=125°C L=100µH 8 6 Switching Energy (mJ) Eoff 4 2 0 Eoff VDS=670V ID=78A TJ=125°C L=100µH 12 10 8 Eon 6 4 Eoff 2 0 20 40 60 80 100 120 140 160 0 ID, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 ZVS 200 ZCS 150 VDS=670V D=50% RG=1.2Ω TJ=125°C TC=75°C 100 50 Hard switching 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100AM90FG– Rev 3 October, 2012 Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 10 Frequency (kHz) tf 20 td(on) 40 VDS=670V RG=1.2Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 APTM100AM90FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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