APTC90AM60SCTG VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated G1 OUT S1 Q2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 NTC1 • • Benefits • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC90AM60SCTG – Rev 2 October, 2013 Symbol VDSS APTC90AM60SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 1000 50 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Max 200 Unit 60 3.5 200 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 13.6 0.66 nF 540 VGS = 10V VBus = 400V ID = 52A 64 nC 230 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω 1.8 mJ 1.5 2.52 mJ 1.7 0.27 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current Tc = 80°C IF = 90A IF = 180A Diode Forward Voltage IF = 90A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 90A VR = 667V di/dt = 600A/µs Junction to Case Thermal Resistance Min 1000 Typ 350 90 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 2 Tj = 125°C 7 2.3 V ns µC 0.45 www.microsemi.com °C/W 2–7 APTC90AM60SCTG – Rev 2 October, 2013 Symbol VRRM IRM IF APTC90AM60SCTG SiC parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 64 112 20 1.6 2.3 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 1200V di/dt =1000A/µs 160 C Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 RthJC Unit V µA A 1.8 3 V nC pF Junction to Case Thermal Resistance 1 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = Typ 50 5 3952 4 Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 3–7 APTC90AM60SCTG – Rev 2 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC90AM60SCTG SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com Typical CoolMOS Performance Curve VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C 300 Hard switching 200 ZCS 100 0 20 25 30 35 40 45 50 3.0 2.5 2.0 1.5 1.0 0.5 25 3 Eon 2 100 125 150 6 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=3.8Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 4 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eoff 1 0 Eoff 5 4 Eon 3 VDS=600V ID=52A TJ=125°C L=100µH 2 1 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 5 10 15 20 Gate Resistance (Ohms) www.microsemi.com 4–7 APTC90AM60SCTG – Rev 2 October, 2013 Frequency (kHz) ZVS ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 400 APTC90AM60SCTG Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.1 0.3 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 160 5V 80 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 925 900 25 75 100 125 50 40 30 20 10 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 Coss 1000 100 Crss 10 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 DC Drain Current vs Case Temperature 60 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=52A TJ=25°C 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 5–7 APTC90AM60SCTG – Rev 2 October, 2013 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 240 APTC90AM60SCTG Typical parallel SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 150 100 TJ=75°C TJ=125°C 50 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1400 1200 1000 800 600 400 200 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6–7 APTC90AM60SCTG – Rev 2 October, 2013 0 APTC90AM60SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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