LDS-0276

2N3498 thru 2N3501
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
NPN SILICON TRANSISTOR
Available on
commercial
versions
Qualified per MIL-PRF-19500/366
DESCRIPTION
This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a
JANS level for high-reliability applications. These devices are also available in TO-5 and low
profile U4 packaging. Microsemi also offers numerous other transistor products to meet
higher and lower power ratings with various switching speed requirements in both throughhole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N3498 through 2N3501 series.
•
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/366.
TO-39 (TO-205AD)
Package
(See part nomenclature for all available options.)
•
RoHS compliant versions available (commercial grade only).
Also available in:
TO-5 package
APPLICATIONS / BENEFITS
•
•
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
(long-leaded)
2N3498L – 2N3501L
U4 package
(surface mount)
2N3498U4 – 2N3501U4
MAXIMUM RATINGS
Symbol
2N3498
2N3499
2N3500
2N3501
Unit
Collector-Emitter Voltage
VCEO
100
150
V
Collector-Base Voltage
VCBO
100
150
V
Emitter-Base Voltage
VEBO
6.0
6.0
V
IC
500
Parameters / Test Conditions
Collector Current
300
mA
Thermal Resistance Junction-to-Ambient
RӨJA
175
o
C/W
Thermal Resistance Junction-to-Case
RӨJC
30
o
C/W
PT
1.0
5.0
W
TJ, Tstg
-65 to +200
°C
Total Power Dissipation
(1)
@ TA = +25 °C
(2)
@ TC = +25 °C
Operating & Storage Junction Temperature Range
Notes: 1. See figure 1.
2. See figure 2.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 1 of 7
2N3498 thru 2N3501
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin
(commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N3498
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(see Electrical Characteristics
table)
Symbol
Cobo
ICEO
ICEX
IEBO
hFE
VCEO
VCBO
VEBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 2 of 7
2N3498 thru 2N3501
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Characteristic
Symbol
Min.
V(BR)CEO
100
150
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
2N3498, 2N3499
2N3500, 2N3501
Collector-Base Cutoff Current
VCB = 50 V
VCB = 75 V
VCB = 100 V
VCB = 150 V
Emitter-Base Cutoff Current
VEB = 4.0 V
VEB = 6.0 V
2N3498,
2N3500,
2N3498,
2N3500,
2N3499
2N3501
2N3499
2N3501
V
ICBO
50
50
10
10
nA
nA
µA
µA
IEBO
25
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
2N3498,
2N3499,
2N3498,
2N3499,
2N3498,
2N3499,
2N3498,
2N3499,
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3500
2N3501
2N3498
2N3499
hFE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
All Types
2N3498, 2N3499
2N3500, 2N3501
VCE(sat)
0.2
0.6
0.4
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
All Types
2N3498, 2N3499
2N3500, 2N3501
VBE(sat)
0.8
1.4
1.2
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mA, VCE = 20 V, f = 100 MHz
Output Capacitance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
|hfe|
2N3498, 2N3499
2N3500, 2N3501
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
1.5
8.0
Cobo
10
8.0
pF
Cibo
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 3 of 7
2N3498 thru 2N3501
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
SWITCHING CHARACTERISTICS
Characteristic
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA
Turn-Off Time
IC = 150 mA; IB1 = IB2 = -15 mA
Symbol
Min.
Max.
Unit
t
on
115
ns
t
off
1150
ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
IC Collector Current (Milliamperes)
DC Tests
TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
2N3498, 2N3499
VCE = 10 V, IC = 500 mA
2N3500, 2N3501
VCE = 16.67 V, IC = 300 mA
Test 2
VCE = 50 V, IC = 100 mA
All Types
Test 3
VCE = 80 V, IC = 40 mA
All Types
Clamped Switching
TA = +25 oC
Test 1
IB = 85 mA, IC = 500 mA
2N3498, 2N3499
IB = 50 mA, IC = 300 mA
2N3500, 2N3501
VCE Collector to Emitter Voltage (Volts)
Maximum Safe Operating Area
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 4 of 7
2N3498 thru 2N3501
DC Operation Maximum Rating (W)
GRAPHS
TA (°C) (Ambient)
DC Operation Maximum Rating (W)
FIGURE 1
Derating for all devices (RθJA)
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJC)
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 5 of 7
2N3498 thru 2N3501
Theta (°C/W)
GRAPHS
Time (s)
FIGURE 3
Theta (°C/W)
Thermal Impedance Graph (RθJA)
Time (s)
FIGURE 4
Thermal Impedance Graph (RθJC)
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 6 of 7
2N3498 thru 2N3501
PACKAGE DIMENSIONS
Symbol
Inch
Min
Dimensions
Millimeters
Max
Min
Max
Note
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
LC
0.335
0.370
0.200 TP
8.51
9.40
5.08 TP
6
LD
0.016
0.41
0.53
7
0.48
7, 13
1.27
13
LL
LU
0.021
See notes 7, 12 and 13
0.016
L1
0.019
0.41
0.050
L2
0.250
6.35
13
P
0.100
2.54
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
10, 11
0.25
11
r
α
0.010
45° TP
45° TP
6
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
Dimension are in inches.
Millimeters are given for general information only.
Symbol TL is measured from HD maximum.
Details of outline in this zone are optional.
Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or
by gauge.
Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not
exceed .042 inch (1.07 mm) within L1 and beyond LL minimum.
Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector.
Lead number three is electrically connected to case.
Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
Symbol r applied to both inside corners of tab.
For transistor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.7 mm) minimum and .750 inch (19.1
mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L, LL = 1.50 inches (38.1 mm)
minimum and 1.750 inches (44.5 mm) maximum.
All three leads.
In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0276, Rev. 1 (121221)
©2012 Microsemi Corporation
Page 7 of 7