APTM50AM24SCG VDSS = 500V RDSon = 24mΩ typ @ Tj = 25°C ID = 150A @ Tc = 25°C Phase leg Series & SiC parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged G2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration 0/VBUS S2 • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 150 110 600 ±30 28 1250 24 30 1300 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM50AM24SCG – Rev 3 October, 2012 Symbol VDSS APTM50AM24SCG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ VGS = 0V,VDS = 500V VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V 24 3 Max 500 28 5 ±600 Unit µA mΩ V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 19.6 4.2 0.3 nF 434 VGS = 10V VBus = 250V ID = 150A 120 nC 216 10 17 50 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A RG = 0.8Ω Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 150A, RG = 0.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 150A, RG = 0.8Ω ns 41 1.15 mJ 1.5 1.97 mJ 1.7 0.1 °C/W Max Unit V µA A Series diode ratings and characteristics VF trr Qrr Er RthJC Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=600V DC Forward Current Tc = 80°C Tj = 25°C IF = 200A Diode Forward Voltage VGE = 0V Tj = 150°C Tj = 25°C Reverse Recovery Time Tj = 150°C IF = 200A Tj = 25°C Reverse Recovery Charge VR = 300V di/dt =2800A/µs Tj = 150°C Tj = 25°C Reverse Recovery Energy Tj = 150°C Junction to Case Thermal Resistance www.microsemi.com Min 600 Typ 150 200 1.6 1.5 125 220 9.4 2 V ns µC 19.8 2.2 mJ 4.8 0.39 °C/W 2–8 APTM50AM24SCG – Rev 3 October, 2012 Symbol VRRM IRM IF APTM50AM24SCG SiC Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 400 800 80 1.6 2.0 1600 8000 IF DC Forward Current VF Diode Forward Voltage IF = 80A QC Total Capacitive Charge IF = 80A, VR = 600V di/dt =2000A/µs 224 Q Total Capacitance f = 1MHz, VR = 200V 520 f = 1MHz, VR = 400V 400 RthJC Junction to Case Thermal Resistance Unit V µA A 1.8 2.4 V nC pF 0.35 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To heatsink M6 Mounting torque For terminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 100 5 3.5 300 Unit V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–8 APTM50AM24SCG – Rev 3 October, 2012 SP6 Package outline (dimensions in mm) APTM50AM24SCG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 300 600 360 7V 6.5V 240 6V 120 5.5V 0 0 5 10 15 20 VDS > I D(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 TJ=25°C 100 TJ=125°C 50 0 25 0 VDS, Drain to Source Voltage (V) Normalized to VGS=10V @ 75A 1.15 VGS=10V 1.10 VGS=20V 1.05 1.00 0.95 0.90 0 60 120 180 240 300 7 DC Drain Current vs Case Temperature 160 1.20 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance RDS (on) vs Drain Current 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 360 ID, Drain Current (A) 120 80 40 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–8 APTM50AM24SCG – Rev 3 October, 2012 ID, Drain Current (A) 480 7.5V ID, Drain Current (A) 8V VGS=10&15V Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 25 50 75 100 125 150 RDS(on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=75A 2.0 1.5 1.0 0.5 25 Threshold Voltage vs Temperature 100 125 150 Maximum Safe Operating Area ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 75 1000 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 100 limited by RDSon 1ms 10 Single pulse TJ =150°C TC=25°C 1 100 10 10 20 30 40 VGS , Gate to Source Voltage (V) Crss 0 10 100 1000 VDS , Drain to Source Voltage (V) Coss 1000 10ms 1 150 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 100µs limited by RDSon TC, Case Temperature (°C) C, Capacitance (pF) 50 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 50 VDS , Drain to Source Voltage (V) www.microsemi.com Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=150A 12 TJ =25°C VDS=250V 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 500 600 Gate Charge (nC) 5–8 APTM50AM24SCG – Rev 3 October, 2012 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM50AM24SCG APTM50AM24SCG Rise and Fall times vs Current Delay Times vs Current 80 60 VDS=333V R G=0.8Ω TJ=1 25 °C L=100µH 60 td(off) 40 t r and tf (ns) td(on) and t d(off) (ns) 50 VDS=333V R G =0.8Ω TJ=1 25 °C L=100µH 30 20 td(on) tf 40 20 tr 10 0 0 30 80 130 180 230 30 280 80 ID, Drain Current (A) 180 230 280 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 8 VDS=333V R G =0.8Ω TJ=1 25 °C L=100µH 4 Switching Energy (mJ) 5 Switching Energy (mJ) 130 Eoff 3 Eon 2 1 VDS=333V I D=150A TJ=1 25 °C L=100µH 6 Eoff 4 Eon 2 0 0 30 80 130 180 230 280 ID, Drain Current (A) 0 2 4 6 8 10 Gate Resistance (Ohms) Operating Frequency vs Drain Current 600 ZVS ZCS 400 VDS=333V D=50% R G =0.8Ω TJ=1 25 °C TC =75 °C 300 200 Hard switching 100 0 40 70 100 130 ID, Drain Current (A) www.microsemi.com 6–8 APTM50AM24SCG – Rev 3 October, 2012 Frequency (kHz) 500 APTM50AM24SCG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1600 TJ=25°C 120 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 160 TJ=175°C 80 TJ=125°C 40 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 1400 TJ=175°C 1200 1000 800 TJ=125°C TJ=75°C 600 400 TJ=25°C 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 2500 2000 1500 1000 500 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 7–8 APTM50AM24SCG – Rev 3 October, 2012 C, Capacitance (pF) 3000 APTM50AM24SCG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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