APT65GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 ® E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 33A • Low Gate Charge • 50 kHz operation @ 400V, 47A • Ultrafast Tail Current shutoff • SSOA Rated C G ISOTOP ® S OT 22 7 "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT65GP60JDQ2 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 130 I C2 Continuous Collector Current @ TC = 110°C 60 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 250 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 250A @ 600V Total Power Dissipation Watts 431 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125°C) 2.1 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 6-2005 MIN Rev A Characteristic / Test Conditions 050-7453 Symbol DYNAMIC CHARACTERISTICS Symbol APT65GP60JDQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 35 Gate Charge 7.5 VGE = 15V 210 TJ = 150°C, R G = 5Ω, VGE = 605 895 Inductive Switching (125°C) 30 VCC = 400V 55 VGE = 15V 130 RG = 5Ω 90 605 I C = 65A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1410 6 Current Fall Time ns 65 TJ = +25°C Turn-off Delay Time nC 90 RG = 5Ω Current Rise Time V A 55 I C = 65A Turn-on Delay Time pF 250 30 5 UNIT 65 VCC = 400V 4 MAX 50 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 580 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 7400 I C = 65A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 1925 6 1470 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT VIsolation MIN Package Weight TYP MAX .29 1.21 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7453 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 90 IC, COLLECTOR CURRENT (A) TJ = -55°C 40 TJ = 25°C 30 TJ = 125°C 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = -55°C 100 TJ = 25°C 50 TJ = 125°C 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.5 3.0 IC = 130A 2.5 IC = 65A 2.0 IC = 32.5A 1.5 1.0 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 50 100 150 200 GATE CHARGE (nC) 250 FIGURE 4, Gate Charge 3.0 IC = 130A 2.5 IC = 65A 2.0 1.5 IC = 32.5A 1.0 0.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 180 1.10 1.05 I = 65A C T = 25°C 14 0 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 150 0 FIGURE 2, Output Characteristics (TJ = 125°C) 16 IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) 200 TJ = 125°C 20 10 250µs PULSE TEST<0.5 % DUTY CYCLE TJ = 25°C 30 0 250 TJ = -55°C 40 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 60 50 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 6-2005 60 50 70 Rev A 80 70 80 050-7453 IC, COLLECTOR CURRENT (A) 90 0 APT65GP60JDQ2 100 100 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 VGE = 15V 25 20 15 10 VCE = 400V TJ = 25°C, TJ =125°C RG = 5Ω L = 100 µH 5 0 APT65GP60JDQ2 160 35 140 120 80 VGE =15V,TJ=25°C 60 40 V = 400V 20 RCE= 5Ω G 0 5 VGE =15V,TJ=125°C 100 L = 100 µH 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 140 RG = 5Ω, L = 100µH, VCE = 400V 120 120 100 100 5 RG = 5Ω, L = 100µH, VCE = 400V tf, FALL TIME (ns) tr, RISE TIME (ns) TJ = 125°C, VGE = 15V 80 60 40 TJ = 25 or 125°C,VGE = 15V 20 5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) G TJ = 125°C,VGE =15V 4000 3000 2000 1000 TJ = 25°C,VGE =15V 0 TJ = 125°C, VGE = 15V 3000 2000 1000 TJ = 25°C, VGE = 15V 5 25 45 65 85 105 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000 Eoff,130A Eon2,65A 2000 Eon2,32.5A Eoff,65A Eoff 32.5A , 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 6-2005 Rev A 050-7453 Eon2,130A 8000 0 G 4000 6000 = 400V V CE = +15V V GE T = 125°C J 0 = 400V V CE = +15V V GE R = 5Ω 0 10 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000 TJ = 25°C, VGE = 15V 5000 = 400V V CE = +15V V GE R = 5Ω 10000 40 0 5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 60 20 0 6000 80 Eon2,130A 5000 V = 400V CE V = +15V GE R = 5Ω 4000 Eoff,130A G 3000 2000 Eon2,65A Eoff,65A 1000 0 Eon2,32.5A Eoff 32.5A , 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 5000 1,000 C0es 500 100 50 APT65GP60JDQ2 300 10,000 250 200 150 100 Cres 50 0 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.30 0.7 0.20 0.5 0.15 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.9 0.25 0.3 t1 t2 0.05 0 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.136 0.0833 0.227 1.08 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 5 1 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 5Ω G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 15 30 45 60 75 90 105 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2005 Power (watts) 0.0175 50 Rev A 0.0697 100 050-7453 Junction temp. (°C) RC MODEL FMAX, OPERATING FREQUENCY (kHz) 190 APT65GP60JDQ2 APT30DQ60 10% TJ = 125 °C Gate Voltage IC V CC td(on) V CE Collector Current tr 90% 5% A 10% 5% Collector Voltage D.U.T. Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 65GP60B2 @ 125C Eoff VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage TJ = 125 °C A Collector Voltage td(off) V CE tf 90% 100uH IC V CLAMP 0 10% Switching Energy Collector Current 050-7453 Rev A 6-2005 Figure 23, Turn-off Switching Waveforms and Definitions B A DRIVER* Figure 24, EON1 Test Circuit D.U.T. TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) All Ratings: TC = 25°C unless otherwise specified. APT65GP60JDQ2 Characteristic / Test Conditions Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 42 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM UNIT Amps 320 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN Forward Voltage VF TYP IF = 65A 2.3 IF = 130A 2.9 IF = 65A, TJ = 125°C 1.4 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 21 trr Reverse Recovery Time - 105 Qrr Reverse Recovery Charge - 115 - 3 - 125 ns - 465 nC - 7 - 60 ns - 830 nC - 23 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/µs IF = 30A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps 1.20 0.9 1.00 0.7 0.80 0.5 0.60 0.40 0.3 0.20 0.1 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10 -4 RC MODEL Junction temp (°C) Power (watts) 0.320 °C/W 0.00278 J/°C 0.515 °C/W 0.0421 J/°C 0.375 °C/W 0.242 J/°C Case temperature (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 6-2005 -5 Rev A 10 t1 050-7453 0 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 1.40 140 80 60 TJ = 125°C 40 TJ = -55°C 20 TJ = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 1400 T = 125°C J V = 400V R 1200 60A 1000 800 30A 600 400 15A 200 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 R 150 30A 100 15A 50 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 27. Reverse Recovery Time vs. Current Rate of Change 35 T = 125°C J V = 400V 60A R 30 25 20 15 30A 10 15A 5 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 29. Reverse Recovery Current vs. Current Rate of Change 50 Qrr Duty cycle = 0.5 T = 175°C 45 trr 1.0 T = 125°C J V = 400V 60A 0 J 40 IRRM 0.8 trr 35 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr, REVERSE RECOVERY TIME (ns) TJ = 175°C 100 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 120 0 APT65GP60JDQ2 200 0.6 30 25 20 0.4 Qrr 0.2 15 10 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 30. Dynamic Parameters vs. Junction Temperature 050-7453 Rev A CJ, JUNCTION CAPACITANCE (pF) 6-2005 200 150 100 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 31. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circui t 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 34, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Emitter/Anode 30.1 (1.185) 30.3 (1.193) Collector/Cathode * Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal. 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 6-2005 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) Rev A r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7453 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)