APT65GP60L2DQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 APT65GP60L2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 54A • Low Gate Charge • 50 kHz operation @ 400V, 76A • Ultrafast Tail Current shutoff • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT65GP60L2DQ2 VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 7 @ TC = 25°C UNIT Volts 198 96 Amps 250 @ TC = 150°C 250A @ 600V Switching Safe Operating Area @ TJ = 150°C Watts 833 Total Power Dissipation Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125°C) 2.1 (VCE = VGE, I C = 2.5mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 1250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 5500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 6-2005 MIN Rev A Characteristic / Test Conditions 050-7454 Symbol DYNAMIC CHARACTERISTICS Symbol APT65GP60L2DQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 35 Gate Charge 7.5 VGE = 15V 210 TJ = 150°C, R G = 5Ω, VGE = 605 895 Inductive Switching (125°C) 30 VCC = 400V 55 VGE = 15V 130 RG = 5Ω 90 605 I C = 65A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1410 6 Current Fall Time ns 65 TJ = +25°C Turn-off Delay Time nC 90 RG = 5Ω Current Rise Time V A 55 I C = 65A Turn-on Delay Time pF 250 30 5 UNIT 65 VCC = 400V 4 MAX 50 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 580 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 7400 I C = 65A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 1925 6 1470 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .15 RθJC Junction to Case (DIODE) .67 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7454 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 90 IC, COLLECTOR CURRENT (A) TJ = -55°C 40 TJ = 25°C 30 TJ = 125°C 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = -55°C 100 TJ = 25°C 50 TJ = 125°C 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.5 3.0 IC = 130A 2.5 IC = 65A 2.0 IC = 32.5A 1.5 1.0 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 50 100 150 200 GATE CHARGE (nC) 250 FIGURE 4, Gate Charge 3.0 IC = 130A 2.5 IC = 65A 2.0 1.5 IC = 32.5A 1.0 0.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 300 1.10 1.05 I = 65A C T = 25°C 14 0 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 150 0 FIGURE 2, Output Characteristics (TJ = 125°C) 16 IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) 200 TJ = 125°C 20 10 250µs PULSE TEST<0.5 % DUTY CYCLE TJ = 25°C 30 0 250 TJ = -55°C 40 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 60 50 250 200 150 100 50 0 -50 Lead Temperature Limited -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 6-2005 60 50 70 Rev A 80 70 80 050-7454 IC, COLLECTOR CURRENT (A) 90 0 APT65GP60L2DQ2 100 100 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 VGE = 15V 25 20 15 10 VCE = 400V TJ = 25°C, TJ =125°C RG = 5Ω L = 100 µH 5 0 APT65GP60L2DQ2 160 35 140 120 80 VGE =15V,TJ=25°C 60 40 V = 400V 20 RCE= 5Ω G 0 5 VGE =15V,TJ=125°C 100 L = 100 µH 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 140 RG = 5Ω, L = 100µH, VCE = 400V 120 120 100 100 5 RG = 5Ω, L = 100µH, VCE = 400V tf, FALL TIME (ns) tr, RISE TIME (ns) TJ = 125°C, VGE = 15V 80 60 40 TJ = 25 or 125°C,VGE = 15V 20 5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) G TJ = 125°C,VGE =15V 4000 3000 2000 1000 TJ = 25°C,VGE =15V 0 TJ = 125°C, VGE = 15V 3000 2000 1000 TJ = 25°C, VGE = 15V 5 25 45 65 85 105 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000 Eoff,130A Eon2,65A 2000 Eon2,32.5A Eoff,65A Eoff 32.5A , 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 6-2005 Rev A 050-7454 Eon2,130A 8000 0 G 4000 6000 = 400V V CE = +15V V GE T = 125°C J 0 = 400V V CE = +15V V GE R = 5Ω 0 10 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000 TJ = 25°C, VGE = 15V 5000 = 400V V CE = +15V V GE R = 5Ω 10000 40 0 5 25 45 65 85 105 125 145 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 60 20 0 6000 80 Eon2,130A 5000 V = 400V CE V = +15V GE R = 5Ω 4000 Eoff,130A G 3000 2000 Eon2,65A Eoff,65A 1000 0 Eon2,32.5A Eoff 32.5A , 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 5000 1,000 C0es 500 100 50 APT65GP60L2DQ2 300 10,000 250 200 150 100 Cres 50 0 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.9 0.14 0.12 0.7 0.10 0.08 0.5 Note: 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.16 0.3 0.04 0 t2 SINGLE PULSE 0.1 0.02 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.0822 0.256 Case temperature(°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 5Ω G max fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 10 30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2005 0.0217 F 50 Rev A 0.0683 Power (watts) 100 050-7454 RC MODEL Junction temp (°C) FMAX, OPERATING FREQUENCY (kHz) 187 APT65GP60L2DQ2 APT40DQ60 10% TJ = 125 °C Gate Voltage IC V CC td(on) V CE Collector Current tr 90% 5% A 10% 5% Collector Voltage D.U.T. Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 65GP60B2 @ 125C Eoff VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage TJ = 125 °C A Collector Voltage td(off) V CE tf 90% 100uH IC V CLAMP 0 10% Switching Energy Collector Current 050-7454 Rev A 6-2005 Figure 23, Turn-off Switching Waveforms and Definitions B A DRIVER* Figure 24, EON1 Test Circuit D.U.T. TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) All Ratings: TC = 25°C unless otherwise specified. APT65GP60L2DQ2 Characteristic / Test Conditions Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5) 40 RMS Forward Current (Square wave, 50% duty) 63 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM UNIT Amps 320 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN Forward Voltage VF TYP IF = 65A 2.3 IF = 130A 2.9 IF = 65A, TJ = 125°C 1.4 MAX UNIT Volts DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 22 trr Reverse Recovery Time - 25 Qrr Reverse Recovery Charge - 35 - 3 - 160 ns - 480 nC - 6 - 85 ns - 920 nC - 20 Amps IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 40A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 40A, diF/dt = -200A/µs IF = 40A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C ns nC - - Amps Amps 0.9 0.60 0.50 0.7 0.40 0.5 Note: 0.30 0.3 0.20 0.10 t2 t 0.1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.289 °C/W 0.00448 J/°C 0.381 °C/W 0.120 J/°C Power (watts) Case temperature (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL 6-2005 RC MODEL Junction temp (°C) Rev A 10-5 t1 050-7454 0 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.70 100 80 60 TJ = 125°C 40 TJ = 175°C 20 TJ = 25°C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 1400 T = 125°C J V = 400V R 1200 80A 1000 800 40A 600 400 20A 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 0.6 trr 0.4 CJ, JUNCTION CAPACITANCE (pF) 40 25 T = 125°C J V = 400V R 80A 20 15 40A 10 20A 5 Duty cycle = 0.5 T = 175°C J 60 50 40 30 Qrr 20 10 0 200 6-2005 60 70 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) IRRM 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 30. Dynamic Parameters vs. Junction Temperature Rev A 80 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 29. Reverse Recovery Current vs. Current Rate of Change trr 0.2 050-7454 20A 100 0 Qrr 0.8 180 160 140 120 100 80 60 40 20 0 40A 120 80 1.0 0.0 140 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 27. Reverse Recovery Time vs. Current Rate of Change 1.4 1.2 R 80A 0 IRRM, REVERSE RECOVERY CURRENT (A) 0 T = 125°C J V = 400V 160 20 TJ = -55°C 0 APT65GP60L2DQ2 180 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 120 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 31. Maximum Average Forward Current vs. CaseTemperature TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 Vr diF /dt Adjust +18V APT40GT60BR 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 33. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 34, Diode Reverse Recovery Waveform and Definitions TO-264MAX™ (L2) Package Outline e1 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) Collector (Cathode) 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 6-2005 Gate Collector (Cathode) Emitter (Anode) Rev A 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7454 2.29 (.090) 2.69 (.106)