APT75GN60LDQ3(G)_B.PDF

APT75GN60LDQ3(G)
600V
TYPICAL PERFORMANCE CURVES
APT75GN60LDQ3
APT75GN60LDQ3G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
TO-264
• 600V Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
6µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT75GN60LDQ3(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
8
@ TC = 25°C
UNIT
Volts
155
93
1
Amps
225
225A @ 600V
Switching Safe Operating Area @ TJ = 175°C
536
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 175
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.05
1.45
1.85
50
2
600
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.87
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
10-2005
MIN
Rev B
Characteristic / Test Conditions
050-7620
Symbol
APT75GN60LDQ3(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
SCSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
150
Gate Charge
9.5
VGE = 15V
485
VGE =
µs
VCC = 400V
48
38
RG = 1.0Ω 7
2500
TJ = +25°C
2140
Turn-on Delay Time
Inductive Switching (125°C)
47
VCC = 400V
48
Current Rise Time
Turn-off Delay Time
VGE = 15V
430
RG = 1.0Ω 7
55
2600
I C = 75A
Current Fall Time
44
Turn-on Switching Energy (Diode)
µJ
3725
6
Turn-on Switching Energy
ns
385
I C = 75A
Eon2
nC
6
VGE = 15V
Turn-on Switching Energy (Diode)
V
A
47
5
pF
225
Inductive Switching (25°C)
4
UNIT
270
7,
VCC = 600V, VGE = 15V,
Current Fall Time
MAX
30
TJ = 125°C, R G = 4.3Ω 7
Turn-off Delay Time
Turn-off Switching Energy
370
f = 1 MHz
15V, L = 100µH,VCE = 600V
Current Rise Time
Eon1
Eoff
VGE = 0V, VCE = 25V
TJ = 175°C, R G = 4.3Ω
Turn-on Delay Time
Turn-off Switching Energy
4500
I C = 75A
Short Circuit Safe Operating Area
TYP
Capacitance
VCE = 300V
Switching Safe Operating Area
Turn-on Switching Energy
MIN
55
TJ = +125°C
ns
4525
66
µJ
2585
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.28
RθJC
Junction to Case (DIODE)
.34
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
050-7620
Rev B
10-2005
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
= 15V
12V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
100
TJ = 25°C
80
TJ = 125°C
60
TJ = 175°C
40
TJ = -55°C
20
0
IC, COLLECTOR CURRENT (A)
TJ = -55°C
120
TJ = 25°C
100
TJ = 125°C
80
60
40
TJ = 175°C
20
0
0
10V
100
9V
50
8V
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
11V
150
0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
140
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
160
I = 75A
C
T = 25°C
J
14
VCE = 120V
12
VCE = 300V
10
VCE = 480V
8
6
4
2
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
0
100
2.0
IC = 75A
1.5
IC = 37.5A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
3.0
2.0
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
0.85
IC = 37.5A
1.0
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
0.90
IC = 75A
1.5
1.10
0.95
IC = 150A
2.5
200
1.00
500
3.5
1.15
1.05
200
300
400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 150A
2.5
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
13 & 15V
0
160
140
120
100
80
60
Lead Temperature
Limited
40
20
0
-50 -25
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
GE
140
Rev B
V
APT75GN60LDQ3(G)
250
050-7620
160
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
50
40
30
20
VCE = 400V
10 T = 25°C, or =125°C
J
RG = 1.0Ω
L = 100 µH
0
200
tf, FALL TIME (ns)
tr, RISE TIME (ns)
120
100
80
60
TJ = 25 or 125°C,VGE = 15V
VCE = 400V
RG = 1.0Ω
L = 100µH
RG = 1.0Ω, L = 100µH, VCE = 400V
16
12
TJ = 125°C
8
6
4
2
TJ = 25°C
0
30
25
20
15
Eon2,75A
Eoff,150A
5
Eoff,75A
0
V
= 400V
CE
= +15V
V
GE
R = 1.0Ω
G
5
TJ = 125°C
4
3
2
TJ = 25°C
1
0
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
Eon2,37.5A
Eoff,37.5A
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (mJ)
Eon2,150A
J
10
TJ = 25°C, VGE = 15V
16
= 400V
V
CE
V
= +15V
GE
T = 125°C
35
30
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
40
40
0
EOFF, TURN OFF ENERGY LOSS (mJ)
G
10
50
6
V
= 400V
CE
V
= +15V
GE
R = 1.0Ω
14
TJ = 125°C, VGE = 15V
60
10
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
EON2, TURN ON ENERGY LOSS (mJ)
100
20
0
SWITCHING ENERGY LOSSES (mJ)
200
70
20
10-2005
VGE =15V,TJ=25°C
80
140
40
Rev B
VGE =15V,TJ=125°C
300
90
160
050-7620
400
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
RG = 1.0Ω, L = 100µH, VCE = 400V
180
500
0
5
25 45 65 85 105 125 145 165
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
0
APT75GN60LDQ3(G)
600
60
= 400V
V
CE
V
= +15V
GE
R = 1.0Ω
14
Eon2,150A
G
12
10
8
6 Eon2,75A
4
Eoff,75A
2
0
0
Eoff,150A
Eon2,37.5A
Eoff,37.5A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT75GN60LDQ3(G)
250
IC, COLLECTOR CURRENT (A)
Cies
P
C, CAPACITANCE ( F)
7,000
1,000
500
Coes
200
150
100
50
Cres
100
0
10
20
30
40
50
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
0.3
t2
SINGLE PULSE
0.05
t
0.1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.181
0.153
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
5
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 1.0Ω
1
10
G
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
30
50
70
90
110
130
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0.00438
F
10
Rev B
0.0998
Power
(watts)
50
050-7620
RC MODEL
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
100
APT75GN60LDQ3(G)
Gate Voltage
10%
APT75DQ60
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
5%
90%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
tf
Collector Voltage
90%
10%
0
Collector Current
Switching Energy
050-7620
Rev B
10-2005
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT75GN60LDQ3(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF
(AV)
IF
(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
APT75GN60LDQ3(G)
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 108°C, Duty Cycle = 0.5)
UNIT
75
RMS Forward Current (Square wave, 50% duty)
117
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
600
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
Forward Voltage
VF
TYP
IF = 75A
2.0
IF = 150A
2.4
IF = 75A, TJ = 125°C
1.7
MAX
UNIT
Volts
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
29
trr
Reverse Recovery Time
-
31
Qrr
Reverse Recovery Charge
-
55
-
4
-
140
ns
-
650
nC
-
9
-
90
ns
-
1300
nC
-
27
Amps
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 75A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 75A, diF/dt = -200A/µs
IF = 75A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
D = 0.9
0.30
0.25
0.7
0.20
0.5
Note:
0.15
0.3
0.10
t1
t2
t
0.05
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
0.129
0.0107
0.211
0.120
10-2005
10
-4
Rev B
10
-5
Power
(watts)
Case temperature (°C)
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7620
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.35
180
160
160
140
120
100
TJ = 125°C
80
60
TJ = 25°C
TJ = 175°C
40
TJ = -55°C
20
0
0
0.5
1
1.5
2
2.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
1800
T = 125°C
J
V = 400V
1600
R
1400
150A
1200
75A
1000
800
37.5A
600
400
200
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
trr, REVERSE RECOVERY TIME
(ns)
180
0.8
trr
0.6
0.4
Qrr
CJ, JUNCTION CAPACITANCE
(pF)
80
60
40
30
T = 125°C
J
V = 400V
150A
R
25
37.5A
20
15
10
75A
5
Duty cycle = 0.5
T = 175°C
J
120
100
80
60
40
20
0
600
10-2005
37.5A
100
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
IRRM
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Rev B
75A
120
0
trr
0.2
050-7620
140
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Qrr
1.0
500
400
300
200
100
0
R
140
1.2
T = 125°C
J
V = 400V
150A
0
1.4
0.0
APT75GN60LDQ3(G)
20
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
200
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT75GN60LDQ3(G)
Vr
diF /dt Adjust
+18V
APT60GT60BR
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-264(L) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Collector
(Cathode)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Rev B
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
10-2005
Emitter
(Anode)
050-7620
Collector
(Cathode)
5
1
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