APT8014L2LL_A.PDF

APT8014L2LL
800V 52A 0.140Ω
POWER MOS 7
R
MOSFET
TO-264
Max
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• Popular TO-264 Max Package
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8014L2LL
UNIT
800
Volts
52
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
PD
TJ,TSTG
208
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
52
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 26A)
TYP
MAX
Volts
0.140
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
12-2003
Characteristic / Test Conditions
050-7103 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8014L2LL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1402
Reverse Transfer Capacitance
f = 1 MHz
248
VGS = 10V
285
VDD = 400V
30
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 52A @ 25°C
td(off)
tf
19
VDD = 400V
ID = 52A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
15
INDUCTIVE SWITCHING @ 25°C
6
1091
VDD = 533V, VGS = 15V
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ID = 52A, RG = 1.7Ω
1135
INDUCTIVE SWITCHING @ 125°C
6
ns
69
RG = 0.6Ω
Fall Time
nC
20
VGS = 15V
Turn-off Delay Time
pF
170
RESISTIVE SWITCHING
Rise Time
UNIT
7238
VGS = 0V
3
MAX
µJ
1662
VDD = 533V, VGS = 15V
ID = 52A, RG = 1.7Ω
1383
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
52
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID52A, dl S/dt = 100A/µs)
930
ns
Q
Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100A/µs)
29
µC
rr
dv/
dt
Peak Diode Recovery
dv/
208
(Body Diode)
1.3
(VGS = 0V, IS = -ID52A)
dt
5
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.14
0.9
0.12
0.7
0.08
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7103 Rev A
12-2003
0.16
0.10
0.06
0.3
t1
t2
0.04
Duty Factor D = t1/t2
0.02
0
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8014L2LL
RC MODEL
Junction
temp. ( ”C)
0.0509
0.0522F
Power
(Watts)
0.0894
0.988F
Case temperature
ID, DRAIN CURRENT (AMPERES)
140
120
VGS =15 & 10V
8V
7V
6.5V
100
80
6V
60
5.5V
40
5V
20
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100
80
TJ = -55°C
60
TJ = +25°C
40
20
0
TJ = +125°C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
2.5
I
V
D
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 26A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 26A
1.15
60
0.0
-50
1.40
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2003
120
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7103 Rev A
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
APT8014L2LL
208
20,000
10,000
100
50
10
1mS
5
Crss
100
16
D
= 52A
12
VDS= 160V
VDS= 400V
VDS= 640V
8
4
0
0
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
100µS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
160
V
td(off)
140
= 533V
DD
R
G
120
= 3Ω
T = 125°C
J
L = 100µH
100
V
100
DD
R
G
= 3Ω
T = 125°C
J
80
tf
= 533V
tr and tf (ns)
td(on) and td(off) (ns)
120
L = 100µH
60
80
60
40
40
tr
20
20
td(on)
0
10
0
10
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
050-7103 Rev A
SWITCHING ENERGY (µJ)
12-2003
2500
30
12000
= 533V
I
10000
T = 125°C
J
EON includes
diode reverse recovery.
1500
Eon
1000
Eoff
500
0
10
20
V
= 3Ω
L = 100µH
2000
40
50
60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
SWITCHING ENERGY (µJ)
3000
20
DD
D
30
= 533V
= 52A
Eoff
T = 125°C
J
L = 100µH
EON includes
8000
diode reverse recovery.
6000
4000
Eon
2000
0
20
30
40
50
60
70
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014L2LL
10 %
90%
Gate Voltage
TJ = 125 C
T = 125 C
J
t
d(off)
td(on)
Drain Voltage
90%
90%
tr
5%
t
f
5%
10%
10 %
Drain Current
Switching Energy
Switching Energy
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
12-2003
2.29 (.090)
2.69 (.106)
050-7103 Rev A
Drain
5.79 (.228)
6.20 (.244)
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