APT8014L2LL 800V 52A 0.140Ω POWER MOS 7 R MOSFET TO-264 Max ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID D • Increased Power Dissipation • Easier To Drive • Popular TO-264 Max Package G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8014L2LL UNIT 800 Volts 52 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 893 Watts Linear Derating Factor 7.14 W/°C PD TJ,TSTG 208 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 52 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 26A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 12-2003 Characteristic / Test Conditions 050-7103 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT8014L2LL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 1402 Reverse Transfer Capacitance f = 1 MHz 248 VGS = 10V 285 VDD = 400V 30 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 52A @ 25°C td(off) tf 19 VDD = 400V ID = 52A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 15 INDUCTIVE SWITCHING @ 25°C 6 1091 VDD = 533V, VGS = 15V Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ID = 52A, RG = 1.7Ω 1135 INDUCTIVE SWITCHING @ 125°C 6 ns 69 RG = 0.6Ω Fall Time nC 20 VGS = 15V Turn-off Delay Time pF 170 RESISTIVE SWITCHING Rise Time UNIT 7238 VGS = 0V 3 MAX µJ 1662 VDD = 533V, VGS = 15V ID = 52A, RG = 1.7Ω 1383 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 52 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID52A, dl S/dt = 100A/µs) 930 ns Q Reverse Recovery Charge (IS = -ID52A, dl S/dt = 100A/µs) 29 µC rr dv/ dt Peak Diode Recovery dv/ 208 (Body Diode) 1.3 (VGS = 0V, IS = -ID52A) dt 5 Amps Volts 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.14 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.9 0.12 0.7 0.08 Note: 0.5 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7103 Rev A 12-2003 0.16 0.10 0.06 0.3 t1 t2 0.04 Duty Factor D = t1/t2 0.02 0 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 SINGLE PULSE 10-4 °C/W 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT8014L2LL RC MODEL Junction temp. ( ”C) 0.0509 0.0522F Power (Watts) 0.0894 0.988F Case temperature ID, DRAIN CURRENT (AMPERES) 140 120 VGS =15 & 10V 8V 7V 6.5V 100 80 6V 60 5.5V 40 5V 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 100 80 TJ = -55°C 60 TJ = +25°C 40 20 0 TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 2.5 I V D 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 26A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) NORMALIZED TO V = 10V @ 26A 1.15 60 0.0 -50 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 12-2003 120 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 050-7103 Rev A ID, DRAIN CURRENT (AMPERES) 140 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL APT8014L2LL 208 20,000 10,000 100 50 10 1mS 5 Crss 100 16 D = 52A 12 VDS= 160V VDS= 400V VDS= 640V 8 4 0 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I Coss 1,000 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Ciss 100µS C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 160 V td(off) 140 = 533V DD R G 120 = 3Ω T = 125°C J L = 100µH 100 V 100 DD R G = 3Ω T = 125°C J 80 tf = 533V tr and tf (ns) td(on) and td(off) (ns) 120 L = 100µH 60 80 60 40 40 tr 20 20 td(on) 0 10 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 050-7103 Rev A SWITCHING ENERGY (µJ) 12-2003 2500 30 12000 = 533V I 10000 T = 125°C J EON includes diode reverse recovery. 1500 Eon 1000 Eoff 500 0 10 20 V = 3Ω L = 100µH 2000 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT SWITCHING ENERGY (µJ) 3000 20 DD D 30 = 533V = 52A Eoff T = 125°C J L = 100µH EON includes 8000 diode reverse recovery. 6000 4000 Eon 2000 0 20 30 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8014L2LL 10 % 90% Gate Voltage TJ = 125 C T = 125 C J t d(off) td(on) Drain Voltage 90% 90% tr 5% t f 5% 10% 10 % Drain Current Switching Energy Switching Energy 0 Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit TO-264 MAXTM(L2) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 12-2003 2.29 (.090) 2.69 (.106) 050-7103 Rev A Drain 5.79 (.228) 6.20 (.244)