PHILIPS BF547W

DISCRETE SEMICONDUCTORS
DATA SHEET
BF547W
NPN 1 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
June 1994
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
FEATURES
DESCRIPTION
• Stable oscillator operation
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
• High current gain
• Good thermal stability.
APPLICATIONS
handbook, 2 columns
PINNING
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
1
2
Top view
MBC870
Marking code: E2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
30
V
VCEO
collector-emitter voltage
open base
−
−
20
V
IC
collector current (DC)
−
−
50
mA
Ptot
total power dissipation
up to Ts = 63 °C; note 1
−
−
300
mW
hFE
DC current gain
IC = 2 mA; VCE = 10 V
40
95
250
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz
−
1
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain
IC = 1 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C
−
20
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
50
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
+150
°C
up to Ts = 63 °C; note 1
Note to the “Quick reference data” and “Limiting values”
1. Ts is the temperature at the soldering point of the collector pin.
June 1994
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
290
K/W
MAX.
UNIT
up to Ts = 63 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
V(BR)CBO
collector-base breakdown
voltage
IC = 0.01 mA; IE = 0
−
−
30
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 10 mA; IB = 0
−
−
20
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.01 mA; IC = 0
−
−
3
V
ICBO
collector cut-off current
IE = 0; VCB = 10 V
−
−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 10 V
40
95
250
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz
−
1
−
pF
fT
transition frequency
IC = 15 mA; VCE = 10 V;
f = 500 MHz
0.8
1.2
1.6
GHz
GUM
maximum unilateral power gain;
note 1
IC = 1 mA; VCE = 10 V;
f = 100 MHz; Tamb = 25 °C;
−
20
−
dB
Note
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming s12 is zero.G UM = 10 log -----------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
June 1994
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
MLB587
400
MBB397
140
handbook, halfpage
handbook, halfpage
P tot
(mW)
h FE
300
100
200
60
100
20
10 1
0
0
50
100
150
Ts
200
( o C)
1
10
2
I C (mA) 10
VCE = 10 V; Tj = 25 °C.
Fig.3
Fig.2
Power derating curve.
DC current gain as a function of collector
current; typical values.
MLB588
2
MLB589
1.4
handbook, halfpage
handbook, halfpage
C re
(pF)
1.6
fT
(GHz)
1
1.2
0.8
0.6
0.4
0
0
4
8
12
16
0.2
10 1
20
VCB (V)
IC = 0; f = 1 MHz.
Fig.4
June 1994
1
10
I C (mA)
10 2
VCE = 10 V; f = 500 MHz.
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
4
Transition frequency as a function
of collector current; typical values.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
MLB590
30
MLB591
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
20
30
20
10
10
0
0
5
10
15
0
20
10
I C (mA)
VCE = 10 V; f = 100 MHz.
Fig.6
10
2
10
3
f (MHz)
10
4
VCE = 10 V; IC = 15 mA.
Gain as a function of collector current;
typical values.
Fig.7
MLB592
1
Gain as a function of frequency;
typical values.
MLB593
6
handbook, halfpage
handbook, halfpage
VCE(sat)
F
(dB)
(V)
0.8
4
0.6
0.4
2
0.2
0
10 1
0
0
2
4
6
8
10
I C (mA)
June 1994
I C (mA)
10
VCE = 10 V; ZS = ZL = 50 Ω; f = 100 MHz.
IC/IB = 10.
Fig.8
1
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9
5
Minimum noise figure as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
180 o
0.2
0
0.4
5
0.5
0.2
2 GHz
1
2
5
40 MHz
0.2
0.5
2
135 o
0o
0
5
45 o
1
MLB594
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (s11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
2 GHz
25
20
15
10
0o
5
135 o
45 o
90 o
MLB595
VCE = 10 V; IC = 15 mA.
Fig.11 Common emitter forward transmission coefficient (s21); typical values.
June 1994
6
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
90 o
handbook, full pagewidth
135 o
45 o
2 GHz
180 o
0.5
0.4
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o
MLB596
VCE = 10 V; IC = 15 mA.
Fig.12 Common emitter reverse transmission coefficient (s12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
2 GHz
0.5
2
135 o
45 o
1
MLB597
1.0
90 o
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (s22); typical values.
June 1994
7
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
SPICE parameters for the BF547W crystal
SEQUENCE No.
PARAMETER
VALUE
UNIT
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
289.1
aA
36(1)
VJS
750.0
mV
2
BF
94.29
−
37(1)
MJS
0.000
−
3
NF
0.989
−
38
FC
0.950
−
4
VAF
90.00
V
Note
5
IKF
158.6
mA
6
ISE
426.6
aA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.491
−
8
BR
12.32
−
9
NR
0.989
−
10
VAR
19.39
V
11
IKR
24.75
mA
12
ISC
249.7
pA
13
NC
1.200
−
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
14
RB
50.00
Ω
15
IRB
1.000
µA
16
RBM
50.00
Ω
17
RE
0.500
Ω
18
RC
1.309
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
1.071
pF
23
VJE
727.3
mV
24
MJE
0.332
−
25
TF
92.98
ps
26
XTF
43.89
−
27
VTF
1.813
V
28
ITF
143.9
mA
Cbe
2
fF
29
PTF
0.000
deg
Ccb
100
fF
30
CJC
1.167
pF
Cce
100
fF
31
VJC
489.0
mV
L1
0.34
nH
32
MJC
0.253
−
L2
0.10
nH
33
XCJC
0.150
−
L3
0.34
nH
34
TR
50.00
ns
LB
0.60
nH
35(1)
CJS
0.000
F
LE
0.60
nH
June 1994
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
Fig.14 Package equivalent circuit SOT323.
List of components (see Fig.14).
DESIGNATION
8
VALUE
UNIT
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
PACKAGE OUTLINE
0.2
1.00
max
0.1
max
0.25
0.10
0.3
0.1
A
1.35
1.15
B
2
3
0.4
0.2
1.4
1.2
0.2 M B
0.2 M A
2.2
1.8
1
2.2
2.0
MBC871
Dimensions in mm.
Fig.15 SOT323.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
June 1994
9
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
NOTES
June 1994
10
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547W
NOTES
June 1994
11
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Document order number:
Date of release: June 1994
9397 733 10011